Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/31559
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dc.contributor.authorHeyns, M.-
dc.contributor.authorAlian, A.-
dc.contributor.authorBRAMMERTZ, Guy-
dc.contributor.authorCaymax, M.-
dc.contributor.authorEneman, G.-
dc.contributor.authorFranco, J.-
dc.contributor.authorGencarelli, F.-
dc.contributor.authorGroeseneken, G.-
dc.contributor.authorHellings, G.-
dc.contributor.authorHikavyy, A.-
dc.contributor.authorHoussa, M.-
dc.contributor.authorKaczer, B.-
dc.contributor.authorLIN, Dan-
dc.contributor.authorLoo, R.-
dc.contributor.authorMerckling, C.-
dc.contributor.authorMEURIS, Marc-
dc.contributor.authorMitard, J.-
dc.contributor.authorNyns, L.-
dc.contributor.authorSioncke, S.-
dc.contributor.authorVandervorst, W.-
dc.contributor.authorVincent, B.-
dc.contributor.authorWaldron, N.-
dc.contributor.authorWitters, L.-
dc.date.accessioned2020-08-05T10:13:35Z-
dc.date.available2020-08-05T10:13:35Z-
dc.date.issued2012-
dc.date.submitted2020-07-31T12:04:13Z-
dc.identifier.citation2012 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), IEEE,-
dc.identifier.isbn978-1-4577-1679-9-
dc.identifier.urihttp://hdl.handle.net/1942/31559-
dc.description.abstractHigh mobility channel materials and new device structures will be needed to meet the power and performance specifications in future technology nodes. In these new material systems and devices various electrically active defects are present at or close to the interface between the high-k dielectric and the alternative channel material which are a major concern for both the performance and the reliability of these new devices.-
dc.description.sponsorshipEuropean Commission Joint Research Centre [214579]-
dc.language.isoen-
dc.publisherIEEE-
dc.subject.otherCMOS-
dc.subject.otherGermanium-
dc.subject.otherIII/V-
dc.subject.otherdefects-
dc.subject.otherATOMIC LAYER DEPOSITION-
dc.subject.otherSURFACE SEGREGATION-
dc.subject.otherPASSIVATION-
dc.subject.otherGROWTH-
dc.subject.otherPERFORMANCE-
dc.subject.otherNBTI-
dc.titleChallenges for introducing Ge and III/V devices into CMOS technologies-
dc.typeProceedings Paper-
dc.relation.edition2012-
local.bibliographicCitation.conferencedateAPR 15-19, 2012-
local.bibliographicCitation.conferencenameIEEE International Reliability Physics Symposium (IRPS)-
local.bibliographicCitation.conferenceplaceAnaheim, CA-
local.bibliographicCitation.jcatC1-
dc.description.notesHeyns, M (corresponding author), IMEC, Kapeldreef 75, B-3001 Louvain, Belgium.-
local.publisher.place345 E 47TH ST, NEW YORK, NY 10017 USA-
local.type.refereedRefereed-
local.type.specifiedProceedings Paper-
dc.identifier.isiWOS:000309183100082-
dc.contributor.orcidLoo, Roger/0000-0003-3513-6058; Franco, Jacopo/0000-0002-7382-8605;-
dc.contributor.orcidMerckling, Clement/0000-0003-3084-2543; houssa,-
dc.contributor.orcidmichel/0000-0003-1844-3515; Groeseneken, Guido/0000-0003-3763-2098;-
dc.contributor.orcidheyns, marc/0000-0002-1199-4341;-
local.provider.typewosris-
local.bibliographicCitation.btitle2012 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS)-
local.uhasselt.uhpubno-
local.description.affiliation[Alian, A.; Brammertz, G.; Caymax, M.; Eneman, G.; Gencarelli, F.; Hellings, G.; Hikavyy, A.; Kaczer, B.; Lin, D.; Loo, R.; Merckling, C.; Meuris, M.; Mitard, J.; Nyns, L.; Sioncke, S.; Vincent, B.; Waldron, N.; Witters, L.] IMEC, Kapeldreef 75, B-3001 Louvain, Belgium.-
local.description.affiliation[Heyns, M.] Katholieke Univ Leuven, MTM, Louvain, Belgium.-
local.description.affiliation[Franco, J.; Groeseneken, G.] Katholieke Univ Leuven, ESAT, Louvain, Belgium.-
local.description.affiliation[Vandervorst, W.] Katholieke Univ Leuven, Dept Phys, Louvain, Belgium.-
item.fulltextNo Fulltext-
item.fullcitationHeyns, M.; Alian, A.; BRAMMERTZ, Guy; Caymax, M.; Eneman, G.; Franco, J.; Gencarelli, F.; Groeseneken, G.; Hellings, G.; Hikavyy, A.; Houssa, M.; Kaczer, B.; LIN, Dan; Loo, R.; Merckling, C.; MEURIS, Marc; Mitard, J.; Nyns, L.; Sioncke, S.; Vandervorst, W.; Vincent, B.; Waldron, N. & Witters, L. (2012) Challenges for introducing Ge and III/V devices into CMOS technologies. In: 2012 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), IEEE,.-
item.contributorHeyns, M.-
item.contributorAlian, A.-
item.contributorBRAMMERTZ, Guy-
item.contributorCaymax, M.-
item.contributorEneman, G.-
item.contributorFranco, J.-
item.contributorGencarelli, F.-
item.contributorGroeseneken, G.-
item.contributorHellings, G.-
item.contributorHikavyy, A.-
item.contributorHoussa, M.-
item.contributorKaczer, B.-
item.contributorLIN, Dan-
item.contributorLoo, R.-
item.contributorMerckling, C.-
item.contributorMEURIS, Marc-
item.contributorMitard, J.-
item.contributorNyns, L.-
item.contributorSioncke, S.-
item.contributorVandervorst, W.-
item.contributorVincent, B.-
item.contributorWaldron, N.-
item.contributorWitters, L.-
item.accessRightsClosed Access-
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