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Title: | Trimethylaluminum-based Atomic Layer Deposition of MO2 (M=Zr, Hf): Gate Dielectrics on In0.53Ga0.47As(001) Substrates | Authors: | Molle, A. Cianci, E. Lamperti, A. Wiemer, C. Baldovino, S. Lamagna, L. Spiga, S. Fanciulli, M. BRAMMERTZ, Guy Merckling, C. Caymax, M. |
Issue Date: | 2012 | Publisher: | ELECTROCHEMICAL SOC INC | Source: | ATOMIC LAYER DEPOSITION APPLICATIONS 8, ELECTROCHEMICAL SOC INC, p. 11 -19 | Series/Report: | ECS Transactions | Abstract: | As post-Si era for digital device is incipient, In0.53Ga0.47As is a good candidate among n-type active channels with high electron mobility but - unlike Si - it lacks a well-established technology for dielectric gating which may bear aggressive device scaling. Here we propose a viable route for the atomic layer deposition (ALD) of high-kappa dielectrics taking advantage from the well-known self-cleaning effect of the trimethylaluminum (TMA) precursor on the III-V compound surfaces. In this respect, the incorporation of Al2O3 cycles both as a pre-conditioning surface treatment and inside the ALD growth of a MO2 host matrix (M=Zr, Hf) is here investigated. Al:MO2/In0.53Ga0.47As heterojunctions have been scrutinized by in situ spectroscopic ellipsometry and ex situ chemical depth-profiling analysis which validate a good physical quality of the oxide and elucidate the effect of the pre-conditioning cycles at the interface level. The resulting MOS capacitors have been characterized by means of multifrequency capacitance-voltage measurements and conductance analysis therein yielding a permittivity of 19 +/- 1 both for Al:HfO2 and Al:ZrO2 and similar electrical quality of the interfaces. On the other hand, Al:HfO2 appears to be electrically more robust against leakage and endowed with a lower frequency dispersion in accumulation. | Notes: | Molle, A (corresponding author), IMM CNR, Lab MDM, Via C Olivetti 2, I-20864 Agrate Brianza, MB, Italy. | Keywords: | GE | Document URI: | http://hdl.handle.net/1942/31567 | ISBN: | 978-1-62332-012-6 | DOI: | 10.1149/05013.0011ecst | ISI #: | WOS:000338022100002 | Category: | C1 | Type: | Proceedings Paper |
Appears in Collections: | Research publications |
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