Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/31569
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dc.contributor.authorMerckling, C.-
dc.contributor.authorChang, Y. C.-
dc.contributor.authorLu, C.Y.-
dc.contributor.authorPenaud, J.-
dc.contributor.authorBRAMMERTZ, Guy-
dc.contributor.authorScarrozza, M.-
dc.contributor.authorPourtois, G.-
dc.contributor.authorKwo, J.-
dc.contributor.authorHong, M.-
dc.contributor.authorDekoster, J.-
dc.contributor.authorMEURIS, Marc-
dc.contributor.authorHeyns, M.-
dc.contributor.authorCaymax, M.-
dc.date.accessioned2020-08-05T12:34:44Z-
dc.date.available2020-08-05T12:34:44Z-
dc.date.issued2011-
dc.date.submitted2020-07-31T12:32:54Z-
dc.identifier.citationSURFACE SCIENCE, 605 (19-20) , p. 1778 -1783-
dc.identifier.urihttp://hdl.handle.net/1942/31569-
dc.description.abstractThe integration of higher carrier mobility materials to increase drive current capability in the next CMOS generations is required for device scaling. But a fundamental issue regarding the introduction of high-mobility III-V in CMOS is the electrical passivation of the interface with the high-kappa gate dielectric. In this work, we show that in situ H2S surface treatment on GaAs(001) leads to a stable and reorganized oxide/III-V interface. The exposition of the GaAs surface is monitored in situ by RHEED and the interface is characterized by XPS analyses. Finally, MOS capacitors are fabricated to extract interface state density over the band gap. These results highlight a promising re-interest in chalcogenide passivation of III-V surfaces for CMOS applications. (C) 2011 Elsevier B.V. All rights reserved.-
dc.description.sponsorshipThis work is part of the IMEC Industrial Affiliation Program on Ge/III–V devices and is supported by the European Commission's projectFP7-ICT-DUALLOGIC no. 214579,“Dual-Channel CMOS for (sub)-22 nm High Performance Logic”. The authors would like to thank Dr.Th. Conard for XPS characterizations and H. Costermans for thesupport of the MBE tool-
dc.language.isoen-
dc.publisherELSEVIER SCIENCE BV-
dc.rights2011 Elsevier B.V. All rights reserved-
dc.subject.otherGaAs-
dc.subject.otherH2S passivation-
dc.subject.otherHigh-kappa dielectrics-
dc.subject.otherMolecular beam epitaxy-
dc.subject.otherCMOS-
dc.subject.otherGAAS(001) SURFACES-
dc.subject.otherSCHOTTKY-BARRIER-
dc.subject.otherSULFUR-
dc.subject.otherEPITAXY-
dc.subject.otherOXIDE-
dc.subject.otherMODEL-
dc.subject.other1ST-PRINCIPLES-
dc.subject.otherDEPOSITION-
dc.subject.otherINSULATOR-
dc.subject.otherGE-
dc.titleDefect density reduction of the Al2O3/GaAs(001) interface by using H2S molecular beam passivation-
dc.typeJournal Contribution-
dc.identifier.epage1783-
dc.identifier.issue19-20-
dc.identifier.spage1778-
dc.identifier.volume605-
local.bibliographicCitation.jcatA1-
dc.description.notesMerckling, C (corresponding author), Interuniv Microelect Ctr IMEC Vzw, Kapeldreef 75, B-3001 Louvain, Belgium.-
dc.description.notesclement.merckling@imec.be-
local.publisher.placePO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS-
local.type.refereedRefereed-
local.type.specifiedArticle-
dc.identifier.doi10.1016/j.susc.2011.06.008-
dc.identifier.isiWOS:000294237600004-
dc.contributor.orcidMerckling, Clement/0000-0003-3084-2543; heyns, marc/0000-0002-1199-4341;-
dc.contributor.orcidBrammertz, Guy/0000-0003-1404-7339; Hong, Mingwei/0000-0003-4657-0933-
dc.identifier.eissn-
local.provider.typewosris-
local.uhasselt.uhpubno-
local.description.affiliation[Merckling, C.; Brammertz, G.; Scarrozza, M.; Pourtois, G.; Dekoster, J.; Meuris, M.; Heyns, M.; Caymax, M.] Interuniv Microelect Ctr IMEC Vzw, B-3001 Louvain, Belgium.-
local.description.affiliation[Chang, Y. C.; Kwo, J.; Hong, M.] Natl Tsing Hua Univ, Hsinchu 30013, Taiwan.-
local.description.affiliation[Chang, Y. C.; Heyns, M.] Katholieke Univ Leuven, B-3001 Louvain, Belgium.-
local.description.affiliation[Lu, C. Y.] Natl Chiao Tung Univ, Hsinchu 300, Taiwan.-
local.description.affiliation[Penaud, J.] Riber, F-95870 Bezons, France.-
item.fulltextWith Fulltext-
item.contributorMerckling, C.-
item.contributorChang, Y. C.-
item.contributorLu, C.Y.-
item.contributorPenaud, J.-
item.contributorBRAMMERTZ, Guy-
item.contributorScarrozza, M.-
item.contributorPourtois, G.-
item.contributorKwo, J.-
item.contributorHong, M.-
item.contributorDekoster, J.-
item.contributorMEURIS, Marc-
item.contributorHeyns, M.-
item.contributorCaymax, M.-
item.fullcitationMerckling, C.; Chang, Y. C.; Lu, C.Y.; Penaud, J.; BRAMMERTZ, Guy; Scarrozza, M.; Pourtois, G.; Kwo, J.; Hong, M.; Dekoster, J.; MEURIS, Marc; Heyns, M. & Caymax, M. (2011) Defect density reduction of the Al2O3/GaAs(001) interface by using H2S molecular beam passivation. In: SURFACE SCIENCE, 605 (19-20) , p. 1778 -1783.-
item.accessRightsRestricted Access-
crisitem.journal.issn0039-6028-
crisitem.journal.eissn1879-2758-
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