Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/31571
Full metadata record
DC FieldValueLanguage
dc.contributor.authorMerckling, C.-
dc.contributor.authorChang, Y. C.-
dc.contributor.authorLu, C. Y.-
dc.contributor.authorPenaud, J.-
dc.contributor.authorEl-Kazzi, M.-
dc.contributor.authorBellenger, F.-
dc.contributor.authorBRAMMERTZ, Guy-
dc.contributor.authorHong, M.-
dc.contributor.authorKwo, J.-
dc.contributor.authorMEURIS, Marc-
dc.contributor.authorDekoster, J.-
dc.contributor.authorHeyns, M. M.-
dc.contributor.authorCaymax, M.-
dc.date.accessioned2020-08-05T12:52:32Z-
dc.date.available2020-08-05T12:52:32Z-
dc.date.issued2011-
dc.date.submitted2020-07-31T13:49:31Z-
dc.identifier.citationMicroelectronic engineering, 88 (4) , p. 399 -402-
dc.identifier.urihttp://hdl.handle.net/1942/31571-
dc.description.abstractA fundamental issue regarding the introduction of high-mobility Ge channels in CMOS circuits is the electrical passivation of the interface with the high-k gate dielectric. In this paper, we investigate the passivation of p-Ge(0 0 1) using molecular H2S. The modification of the semiconductor surface is monitored in situ by RHEED and the interface is characterized by XPS analyses. MOS capacitors are fabricated to extract interface state density, and finally we demonstrate the efficiency of the passivation scheme using a combination with an ultra thin Al interlayer. (C) 2010 Elsevier B.V. All rights reserved.-
dc.description.sponsorshipThis work is part of the IMEC Industrial Affiliation Program andis supported by the European Commission’s project FP7-ICT-DUAL-LOGIC No. 214579, ‘‘Dual-Channel CMOS for (sub)-22 nm High Per-formance Logic”-
dc.language.isoen-
dc.publisherELSEVIER SCIENCE BV-
dc.rights2010 Elsevier B.V. All rights reserved-
dc.subject.otherPassivation-
dc.subject.otherH2S-
dc.subject.otherMolecular beam epitaxy-
dc.subject.otherHigh-mu semiconductors-
dc.titleH2S molecular beam passivation of Ge(001)-
dc.typeJournal Contribution-
local.bibliographicCitation.conferencedateJUN 07-11, 2010-
local.bibliographicCitation.conferencenameEMRS 2010 Spring Meeting on Post-Si-CMOS Electronic Devices - The Role of Ge and III-V Materials-
local.bibliographicCitation.conferenceplaceStrasbourg, FRANCE-
dc.identifier.epage402-
dc.identifier.issue4-
dc.identifier.spage399-
dc.identifier.volume88-
local.bibliographicCitation.jcatA1-
dc.description.notesMerckling, C (corresponding author), IMEC, Kapeeldref 75, B-3001 Louvain, Belgium.-
dc.description.notesclement.merckling@imec.be-
local.publisher.placePO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS-
local.type.refereedRefereed-
local.type.specifiedArticle-
dc.identifier.doi10.1016/j.mee.2010.09.012-
dc.identifier.isiWOS:000288524100019-
dc.contributor.orcidheyns, marc/0000-0002-1199-4341; El Kazzi, Mario/0000-0003-2975-0481;-
dc.contributor.orcidMerckling, Clement/0000-0003-3084-2543; Brammertz,-
dc.contributor.orcidGuy/0000-0003-1404-7339; Hong, Mingwei/0000-0003-4657-0933-
dc.identifier.eissn-
local.provider.typewosris-
local.uhasselt.uhpubno-
local.description.affiliation[Merckling, C.; Bellenger, F.; Brammertz, G.; Meuris, M.; Dekoster, J.; Heyns, M. M.; Caymax, M.] IMEC, B-3001 Louvain, Belgium.-
local.description.affiliation[Chang, Y. C.; Lu, C. Y.; Bellenger, F.; Heyns, M. M.] Katholieke Univ Leuven, B-3001 Louvain, Belgium.-
local.description.affiliation[Chang, Y. C.; Hong, M.; Kwo, J.] Natl Tsing Hua Univ, Hsinchu 300, Taiwan.-
local.description.affiliation[Lu, C. Y.] Natl Chiao Tung Univ, Hsinchu 300, Taiwan.-
local.description.affiliation[Penaud, J.] Riber, F-95873 Bezons, France.-
local.description.affiliation[El-Kazzi, M.] SUN Synchrotron, F-91192 Gif Sur Yvette, France.-
item.fulltextWith Fulltext-
item.contributorMerckling, C.-
item.contributorChang, Y. C.-
item.contributorLu, C. Y.-
item.contributorPenaud, J.-
item.contributorEl-Kazzi, M.-
item.contributorBellenger, F.-
item.contributorBRAMMERTZ, Guy-
item.contributorHong, M.-
item.contributorKwo, J.-
item.contributorMEURIS, Marc-
item.contributorDekoster, J.-
item.contributorHeyns, M. M.-
item.contributorCaymax, M.-
item.fullcitationMerckling, C.; Chang, Y. C.; Lu, C. Y.; Penaud, J.; El-Kazzi, M.; Bellenger, F.; BRAMMERTZ, Guy; Hong, M.; Kwo, J.; MEURIS, Marc; Dekoster, J.; Heyns, M. M. & Caymax, M. (2011) H2S molecular beam passivation of Ge(001). In: Microelectronic engineering, 88 (4) , p. 399 -402.-
item.accessRightsRestricted Access-
crisitem.journal.issn0167-9317-
crisitem.journal.eissn1873-5568-
Appears in Collections:Research publications
Files in This Item:
File Description SizeFormat 
1-s2.0-S016793171000345X-main.pdf
  Restricted Access		Published version631.14 kBAdobe PDFView/Open    Request a copy
Show simple item record

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.