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Title: | Electrical characterization of Cu2ZnSnSe4 solar cells from selenization of sputtered metal layers | Authors: | BRAMMERTZ, Guy Ren, Yi Buffiere, Marie Mertens, Sofie Hendrickx, Jurgen Marko, Hakim Zaghi, Armin E. Lenaers, Nick Koeble, Christine Vleugels, Jef MEURIS, Marc POORTMANS, Jef |
Issue Date: | 2013 | Publisher: | ELSEVIER SCIENCE SA | Source: | Thin solid films (Print), 535 , p. 348 -352 | Abstract: | We report on the electrical and physical properties of Cu2ZnSnSe4 (CZTSe) solar cells consisting of an absorber layer fabricated by selenization of sputtered Cu, Zn, Sn multilayers. Cross-section scanning electron microscopy images show that the polycrystalline absorber layers are approximately 1 mu m thick and that the typical grain size is of the order of 1 mu m. Energy-dispersive X-ray spectroscopy measurements show Cu-poor and Zn-rich compositions with Cu/(Zn + Sn) similar to 0.8 and Zn/Sn similar to 1.2. Solar cells are fabricated out of this absorber material using a standard process flow for chalcogenide solar cells. Under AM1.5 G illumination, the best 1 x 1 cm(2) CZTSe solar cell shows an efficiency of 6.3% with a maximum short circuit current of 31.3 mA/cm(2), an open circuit voltage of 0.39 V and a fill factor of 52%. Doping density of the absorber layers is derived using the drivel level capacitance profiling (DLCP) technique, showing low p-type doping density which seems to increase exponentially with the Zn/Sn ratio. Comparing the values obtained from DLCP to the ones derived from Mott-Schottky plots of the same devices, it is shown that for CZTSe care has to be taken when deriving the doping density. Similar to copper indium gallium selenide junctions, Mott-Schottky plots overestimate the amount of free carriers in the buffer due to the presence of fast defect states inside the bandgap. (C) 2012 Elsevier B.V. All rights reserved. | Notes: | Brammertz, G (corresponding author), Imec Partner Solliance, Kapeldreef 75, B-3001 Heverlee, Belgium. Guy.Brammertz@imec.be |
Keywords: | Thin film photovoltaics;Kesterites;Cu2ZnSnSe4;THIN-FILMS;MODULES | Document URI: | http://hdl.handle.net/1942/31579 | ISSN: | 0040-6090 | e-ISSN: | 1879-2731 | DOI: | 10.1016/j.tsf.2012.10.037 | ISI #: | WOS:000318973600078 | Rights: | 2012 Elsevier B.V. All rights reserved | Category: | A1 | Type: | Journal Contribution |
Appears in Collections: | Research publications |
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1-s2.0-S0040609012013077-main (1).pdf Restricted Access | Published version | 1.08 MB | Adobe PDF | View/Open Request a copy |
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