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Title: | Effects of surface passivation during atomic layer deposition of Al2O3 on In0.53Ga0.47As substrates | Authors: | Lamagna, L. Fusi, M. Spiga, S. Fanciulli, M. BRAMMERTZ, Guy Merckling, C. MEURIS, Marc Molle, A. |
Issue Date: | 2011 | Publisher: | ELSEVIER SCIENCE BV | Source: | Microelectronic engineering, 88 (4) , p. 431 -434 | Abstract: | In this work we investigate the effect of different III-V surface passivation strategies during atomic layer deposition of Al 2 O 3. X-ray photoelectron spectroscopy indicates that bare As-decapped and sulfur passiv-ated In 0.53 Ga 0.47 As present residual oxides on the surface just before the beginning of the Al 2 O 3 deposition while the insertion of a Ge interface passivation layer results in an almost oxide free Ge/III-V interface. The study of the initial growth regimes, by means of in situ spectroscopic ellipsometry, shows that the growth of Al 2 O 3 on Ge leads to an enhanced initial growth accompanied by the formation of Ge-O-Al species thus affecting the final electrical properties of the stack. Alternatively, deposition on decapped and S-passivated In 0.53 Ga 0.47 As results in a more controlled growth process. The sulfur passivation leads to a better electrical response of the capacitor that can be associated to a lower oxide/semiconductor interface trap density. | Notes: | Lamagna, L (corresponding author), IMM CNR, Lab MDM, Via C Olivetti 2, I-20041 Agrate Brianza, MB, Italy. luca.lamagna@mdm.imm.cnr.it |
Keywords: | Atomic layer deposition;Spectroscopic ellipsometry;Al2O3;In0.53Ga0.47As;III-V channels;Interface defects passivation;GE | Document URI: | http://hdl.handle.net/1942/31581 | ISSN: | 0167-9317 | e-ISSN: | 1873-5568 | DOI: | 10.1016/j.mee.2010.10.035 | ISI #: | WOS:000288524100027 | Rights: | 2010 Elsevier B.V. All rights reserved | Category: | A1 | Type: | Journal Contribution |
Appears in Collections: | Research publications |
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