Please use this identifier to cite or link to this item:
http://hdl.handle.net/1942/31583
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Molle, Alessandro | - |
dc.contributor.author | BRAMMERTZ, Guy | - |
dc.contributor.author | Dimoulas, Athanasios | - |
dc.contributor.author | Marchiori, Chiara | - |
dc.date.accessioned | 2020-08-06T07:01:39Z | - |
dc.date.available | 2020-08-06T07:01:39Z | - |
dc.date.issued | 2011 | - |
dc.date.submitted | 2020-07-31T14:36:45Z | - |
dc.identifier.citation | Microelectronic engineering, 88 (4) , p. 323 -323 | - |
dc.identifier.uri | http://hdl.handle.net/1942/31583 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.rights | 2011 Published by Elsevier B.V. | - |
dc.title | Preface to Symposium H: Post-Si-CMOS electronic devices: The role of Ge and III–V materials | - |
dc.type | Journal Contribution | - |
dc.identifier.epage | 323 | - |
dc.identifier.issue | 4 | - |
dc.identifier.spage | 323 | - |
dc.identifier.volume | 88 | - |
local.bibliographicCitation.jcat | A2 | - |
dc.description.notes | Molle, A (corresponding author), CNR IMM, Lab MDM, Via C Olivetti 2, I-20864 Agrate Brianza, MB, Italy. | - |
dc.description.notes | alessandro.molle@mdm.imm.cnr.it | - |
local.publisher.place | PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS | - |
local.type.refereed | Refereed | - |
local.type.specified | Editorial Material | - |
dc.identifier.doi | 10.1016/j.mee.2011.01.037 | - |
dc.identifier.isi | WOS:000288524100001 | - |
dc.contributor.orcid | Molle, Alessandro/0000-0002-3860-4120; Dimoulas, | - |
dc.contributor.orcid | Athanasios/0000-0003-3199-1356; Brammertz, Guy/0000-0003-1404-7339 | - |
dc.identifier.eissn | - | |
local.provider.type | wosris | - |
local.uhasselt.uhpub | no | - |
local.description.affiliation | [Molle, Alessandro] CNR IMM, Lab MDM, I-20864 Agrate Brianza, MB, Italy. | - |
item.fulltext | With Fulltext | - |
item.contributor | Molle, Alessandro | - |
item.contributor | BRAMMERTZ, Guy | - |
item.contributor | Dimoulas, Athanasios | - |
item.contributor | Marchiori, Chiara | - |
item.fullcitation | Molle, Alessandro; BRAMMERTZ, Guy; Dimoulas, Athanasios & Marchiori, Chiara (2011) Preface to Symposium H: Post-Si-CMOS electronic devices: The role of Ge and III–V materials. In: Microelectronic engineering, 88 (4) , p. 323 -323. | - |
item.accessRights | Restricted Access | - |
crisitem.journal.issn | 0167-9317 | - |
crisitem.journal.eissn | 1873-5568 | - |
Appears in Collections: | Research publications |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
1-s2.0-S0167931711000487-main.pdf Restricted Access | Published version | 158.05 kB | Adobe PDF | View/Open Request a copy |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.