Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/31584
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dc.contributor.authorMolle, Alessandro-
dc.contributor.authorLamagna, Luca-
dc.contributor.authorWiemer, Claudia-
dc.contributor.authorSpiga, Sabina-
dc.contributor.authorFanciulli, Marco-
dc.contributor.authorMerckling, Clement-
dc.contributor.authorBRAMMERTZ, Guy-
dc.contributor.authorCaymax, Matty-
dc.date.accessioned2020-08-06T07:11:37Z-
dc.date.available2020-08-06T07:11:37Z-
dc.date.issued2011-
dc.date.submitted2020-07-31T14:38:41Z-
dc.identifier.citationApplied Physics Express, 4 (9) (Art N° 094103)-
dc.identifier.urihttp://hdl.handle.net/1942/31584-
dc.description.abstractAtomic layer deposition of Al:ZrO2 films on In0.53Ga0.47As substrates is shown to be a promising route to boost the oxide permittivity with respect to Al2O3 gate dielectrics and concomitantly take benefit from the reducing effect of the trimethylaluminum precursor on the In0.53Ga0.47As surface. We demonstrates that increasing the number of initial Al2O3 cycles in the growth sequence can improve the physical quality and the electrical response of the Al:ZrO2/In0.53Ga0.47As interface while preserving the overall composition of the oxide. (C) 2011 The Japan Society of Applied Physics-
dc.description.sponsorshipWe acknowledge partial funding from ARAMIS Project, and C. Grazianetti, G. Congedo, and M. Alia (MDM) for experimental and technical assistance.-
dc.language.isoen-
dc.publisherJAPAN SOC APPLIED PHYSICS-
dc.rights2011 The Japan Society of Applied Physics-
dc.subject.otherAL203-
dc.titleImproved Performance of In0.53Ga0.47As-Based Metal-Oxide-Semiconductor Capacitors with Al:ZrO2 Gate Dielectric Grown by Atomic Layer Deposition-
dc.typeJournal Contribution-
dc.identifier.issue9-
dc.identifier.volume4-
local.bibliographicCitation.jcatA1-
dc.description.notesMolle, A (corresponding author), IMM CNR, Lab MDM, Via C Olivetti 2, I-20864 Agrate Brianza, MB, Italy.-
dc.description.notesalessandro.molle@mdm.imm.cnr.it-
local.publisher.placeKUDAN-KITA BUILDING 5TH FLOOR, 1-12-3 KUDAN-KITA, CHIYODA-KU, TOKYO,-
local.publisher.place102-0073, JAPAN-
local.type.refereedRefereed-
local.type.specifiedArticle-
local.bibliographicCitation.artnr094103-
dc.identifier.doi10.1143/APEX.4.094103-
dc.identifier.isiWOS:000294673300029-
dc.contributor.orcidMolle, Alessandro/0000-0002-3860-4120; Spiga,-
dc.contributor.orcidSabina/0000-0001-7293-7503; Merckling, Clement/0000-0003-3084-2543;-
dc.contributor.orcidFanciulli, Marco/0000-0003-2951-0859; Wiemer,-
dc.contributor.orcidClaudia/0000-0001-9975-0458; Brammertz, Guy/0000-0003-1404-7339-
dc.identifier.eissn-
local.provider.typewosris-
local.uhasselt.uhpubyes-
local.description.affiliation[Molle, Alessandro; Lamagna, Luca; Wiemer, Claudia; Spiga, Sabina; Fanciulli, Marco] IMM CNR, Lab MDM, I-20864 Agrate Brianza, MB, Italy.-
local.description.affiliation[Fanciulli, Marco] Univ Milano Bicocca, Dipartimento Sci Mat, Milan, Italy.-
local.description.affiliation[Merckling, Clement; Brammertz, Guy; Caymax, Matty] IMEC, B-3001 Louvain, Belgium.-
item.accessRightsRestricted Access-
item.fullcitationMolle, Alessandro; Lamagna, Luca; Wiemer, Claudia; Spiga, Sabina; Fanciulli, Marco; Merckling, Clement; BRAMMERTZ, Guy & Caymax, Matty (2011) Improved Performance of In0.53Ga0.47As-Based Metal-Oxide-Semiconductor Capacitors with Al:ZrO2 Gate Dielectric Grown by Atomic Layer Deposition. In: Applied Physics Express, 4 (9) (Art N° 094103).-
item.fulltextWith Fulltext-
item.contributorMolle, Alessandro-
item.contributorLamagna, Luca-
item.contributorWiemer, Claudia-
item.contributorSpiga, Sabina-
item.contributorFanciulli, Marco-
item.contributorMerckling, Clement-
item.contributorBRAMMERTZ, Guy-
item.contributorCaymax, Matty-
crisitem.journal.issn1882-0778-
crisitem.journal.eissn1882-0786-
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