Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/31587
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dc.contributor.authorPetersen, Dirch H.-
dc.contributor.authorHansen, Ole-
dc.contributor.authorBoggild, Peter-
dc.contributor.authorLin, Rong-
dc.contributor.authorNielsen, Peter F.-
dc.contributor.authorLin, Dennis-
dc.contributor.authorAdelmann, Christoph-
dc.contributor.authorAlian, Alireza-
dc.contributor.authorMerckling, Clement-
dc.contributor.authorPenaud, Julien-
dc.contributor.authorBRAMMERTZ, Guy-
dc.contributor.authorGoossens, Jozefien-
dc.contributor.authorVandervorst, Wilfried-
dc.contributor.authorClarysse, Trudo-
dc.date.accessioned2020-08-06T08:57:01Z-
dc.date.available2020-08-06T08:57:01Z-
dc.date.issued2010-
dc.date.submitted2020-08-06T08:42:57Z-
dc.identifier.citationJOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 28 (1) , p. C1C41 -C1C47-
dc.identifier.urihttp://hdl.handle.net/1942/31587-
dc.description.abstractIn this study, we investigate the limitations to sheet resistance and Hall effect characterization of ultra-shallow junctions (USJs) in In0.53Ga0.47As. We compare conventional van der Pauw and Hall effect measurements with micro four-point probe (M4PP) and micro Hall effect methods. Due to the high carrier mobility of InGaAs, we extend the micro-Hall effect position error suppression method to also take geometrical magnetoresistance into account. We find that the conventional techniques fail to measure accurately on n(++)/p(+) USJ due to a significant leakage current, whereas the M4PP and micro Hall effect methods are able to give accurate results. Finally, we observe a significant reduction in the carrier mobility for InGaAs USJ.-
dc.language.isoen-
dc.publisherA V S AMER INST PHYSICS-
dc.rights2009 American Vacuum Society-
dc.subject.othercarrier mobility-
dc.subject.othergallium arsenide-
dc.subject.otherHall effect-
dc.subject.otherIII-V semiconductors-
dc.subject.otherindium compounds-
dc.subject.otherleakage currents-
dc.subject.othermagnetoresistance-
dc.subject.othersemiconductor thin films-
dc.subject.otherION-IMPLANTATION-
dc.subject.otherIN0.53GA0.47AS-
dc.titleElectrical characterization of InGaAs ultra-shallow junctions-
dc.typeJournal Contribution-
dc.identifier.epageC1C47-
dc.identifier.issue1-
dc.identifier.spageC1C41-
dc.identifier.volume28-
local.bibliographicCitation.jcatA1-
dc.description.notesPetersen, DH (corresponding author), Tech Univ Denmark, Dept Micro & Nanotechnol, DTU Nanotech, Bldg 345 E, DK-2800 Lyngby, Denmark.-
dc.description.notesdhpe@nanotech.dtu.dk-
local.publisher.placeSTE 1 NO 1, 2 HUNTINGTON QUADRANGLE, MELVILLE, NY 11747-4502 USA-
local.type.refereedRefereed-
local.type.specifiedArticle-
dc.identifier.doi10.1116/1.3231492-
dc.identifier.isiWOS:000275511800018-
dc.contributor.orcidBoggild, Peter/0000-0002-4342-0449; Hansen, Ole/0000-0002-6090-8323;-
dc.contributor.orcidMerckling, Clement/0000-0003-3084-2543; Adelmann,-
dc.contributor.orcidChristoph/0000-0002-4831-3159; Brammertz, Guy/0000-0003-1404-7339-
dc.identifier.eissn-
local.provider.typewosris-
local.uhasselt.uhpubno-
local.description.affiliation[Petersen, Dirch H.; Hansen, Ole; Boggild, Peter] Tech Univ Denmark, Dept Micro & Nanotechnol, DTU Nanotech, DK-2800 Lyngby, Denmark.-
local.description.affiliation[Petersen, Dirch H.; Lin, Dennis; Adelmann, Christoph; Alian, Alireza; Merckling, Clement; Brammertz, Guy; Goossens, Jozefien; Vandervorst, Wilfried; Clarysse, Trudo] IMEC, B-3001 Louvain, Belgium.-
local.description.affiliation[Petersen, Dirch H.; Lin, Rong; Nielsen, Peter F.] CAPRES AS, Scion DTU, DK-2800 Lyngby, Denmark.-
local.description.affiliation[Hansen, Ole] Tech Univ Denmark, CINF, DK-2800 Lyngby, Denmark.-
local.description.affiliation[Penaud, Julien] Riber, F-95870 Bezons, France.-
local.description.affiliation[Vandervorst, Wilfried] Katholieke Univ Leuven, Inst Kern & Stralingsfys, B-3001 Louvain, Belgium.-
item.fulltextWith Fulltext-
item.contributorPetersen, Dirch H.-
item.contributorHansen, Ole-
item.contributorBoggild, Peter-
item.contributorLin, Rong-
item.contributorNielsen, Peter F.-
item.contributorLin, Dennis-
item.contributorAdelmann, Christoph-
item.contributorAlian, Alireza-
item.contributorMerckling, Clement-
item.contributorPenaud, Julien-
item.contributorBRAMMERTZ, Guy-
item.contributorGoossens, Jozefien-
item.contributorVandervorst, Wilfried-
item.contributorClarysse, Trudo-
item.fullcitationPetersen, Dirch H.; Hansen, Ole; Boggild, Peter; Lin, Rong; Nielsen, Peter F.; Lin, Dennis; Adelmann, Christoph; Alian, Alireza; Merckling, Clement; Penaud, Julien; BRAMMERTZ, Guy; Goossens, Jozefien; Vandervorst, Wilfried & Clarysse, Trudo (2010) Electrical characterization of InGaAs ultra-shallow junctions. In: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 28 (1) , p. C1C41 -C1C47.-
item.accessRightsOpen Access-
crisitem.journal.issn1071-1023-
Appears in Collections:Research publications
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