Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/31591
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dc.contributor.authorMerckling, C.-
dc.contributor.authorPenaud, J.-
dc.contributor.authorKohen, D.-
dc.contributor.authorBellenger, F.-
dc.contributor.authorAlian, A.-
dc.contributor.authorBRAMMERTZ, Guy-
dc.contributor.authorEl-Kazzi, M.-
dc.contributor.authorHoussa, M.-
dc.contributor.authorDekoster, J.-
dc.contributor.authorCaymax, M.-
dc.contributor.authorMEURIS, Marc-
dc.contributor.authorHeyns, M. M.-
dc.date.accessioned2020-08-06T09:24:00Z-
dc.date.available2020-08-06T09:24:00Z-
dc.date.issued2009-
dc.date.submitted2020-08-06T09:05:03Z-
dc.identifier.citationMicroelectronic engineering, 86 (7-9) , p. 1592 -1595-
dc.identifier.urihttp://hdl.handle.net/1942/31591-
dc.description.abstractFuture CMOS technologies will require the use of substrate material with a very high mobility in order to fulfil the performance requirements. Therefore, combination of Ge p-MOS with n-MOS devices made out of high mobility III/V compounds, such as GaAs, has recently received some attention for its possible use in advanced CIVICS applications. In this work, the physical, chemical and electrical properties of Al(2)O(3) high-kappa oxide deposited on Ge and GaAs, using Molecular Beam Deposition (MBD) technique, have been investigated. (C) 2009 Elsevier B.V. All rights reserved.-
dc.description.sponsorshipThis work is part of the IMEC Industrial Affiliation Program onGe/III–V devices and is supported by the European Commission’sproject FP7-ICT-DUALLOGIC no. 214579, ‘‘Dual-Channel CMOS for(sub)-22 nm High Performance Logic”-
dc.language.isoen-
dc.publisherELSEVIER SCIENCE BV-
dc.rights2009 Elsevier B.V. All rights reserved-
dc.subject.otherHigh mobility semiconductors-
dc.subject.otherPassivation-
dc.subject.otherMolecular beam epitaxy (MBE)-
dc.titleMolecular beam epitaxy passivation studies of Ge and III–V semiconductors for advanced CMOS-
dc.typeJournal Contribution-
local.bibliographicCitation.conferencedateJUN 28-JUL 07, 2009-
local.bibliographicCitation.conferencename16th Biennial Conference on Insulating Films on Semiconductors-
local.bibliographicCitation.conferenceplaceCambridge Univ, Clare Coll, Cambridge, ENGLAND-
dc.identifier.epage1595-
dc.identifier.issue7-9-
dc.identifier.spage1592-
dc.identifier.volume86-
local.bibliographicCitation.jcatA1-
dc.description.notesMerckling, C (corresponding author), IMEC, EPI, Kapeldreef 75, B-3001 Leuven, Belgium.-
dc.description.notesclement.merckling@imec.be-
local.publisher.placePO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS-
local.type.refereedRefereed-
local.type.specifiedArticle-
dc.identifier.doi10.1016/j.mee.2009.03.048-
dc.identifier.isiWOS:000267460100018-
dc.contributor.orcidKohen, David/0000-0002-2593-3355; El Kazzi, Mario/0000-0003-2975-0481;-
dc.contributor.orcidMerckling, Clement/0000-0003-3084-2543; houssa,-
dc.contributor.orcidmichel/0000-0003-1844-3515; heyns, marc/0000-0002-1199-4341; Brammertz,-
dc.contributor.orcidGuy/0000-0003-1404-7339-
dc.identifier.eissn-
local.provider.typewosris-
local.uhasselt.uhpubno-
local.description.affiliation[Merckling, C.; Kohen, D.; Bellenger, F.; Alian, A.; Brammertz, G.; Dekoster, J.; Caymax, M.; Meuris, M.; Heyns, M. M.] IMEC, EPI, B-3001 Leuven, Belgium.-
local.description.affiliation[Penaud, J.] Riber, F-95873 Bezons, France.-
local.description.affiliation[Bellenger, F.; Houssa, M.; Caymax, M.; Heyns, M. M.] Katholieke Univ Leuven, B-3001 Leuven, Belgium.-
local.description.affiliation[El-Kazzi, M.] SUN Synchrotron, F-91192 Gif Sur Yvette, France.-
item.fulltextWith Fulltext-
item.contributorMerckling, C.-
item.contributorPenaud, J.-
item.contributorKohen, D.-
item.contributorBellenger, F.-
item.contributorAlian, A.-
item.contributorBRAMMERTZ, Guy-
item.contributorEl-Kazzi, M.-
item.contributorHoussa, M.-
item.contributorDekoster, J.-
item.contributorCaymax, M.-
item.contributorMEURIS, Marc-
item.contributorHeyns, M. M.-
item.fullcitationMerckling, C.; Penaud, J.; Kohen, D.; Bellenger, F.; Alian, A.; BRAMMERTZ, Guy; El-Kazzi, M.; Houssa, M.; Dekoster, J.; Caymax, M.; MEURIS, Marc & Heyns, M. M. (2009) Molecular beam epitaxy passivation studies of Ge and III–V semiconductors for advanced CMOS. In: Microelectronic engineering, 86 (7-9) , p. 1592 -1595.-
item.accessRightsRestricted Access-
crisitem.journal.issn0167-9317-
crisitem.journal.eissn1873-5568-
Appears in Collections:Research publications
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