Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/31591
Full metadata record
DC FieldValueLanguage
dc.contributor.authorMerckling, C.-
dc.contributor.authorPenaud, J.-
dc.contributor.authorKohen, D.-
dc.contributor.authorBellenger, F.-
dc.contributor.authorAlian, A.-
dc.contributor.authorBRAMMERTZ, Guy-
dc.contributor.authorEl-Kazzi, M.-
dc.contributor.authorHoussa, M.-
dc.contributor.authorDekoster, J.-
dc.contributor.authorCaymax, M.-
dc.contributor.authorMEURIS, Marc-
dc.contributor.authorHeyns, M. M.-
dc.date.accessioned2020-08-06T09:24:00Z-
dc.date.available2020-08-06T09:24:00Z-
dc.date.issued2009-
dc.date.submitted2020-08-06T09:05:03Z-
dc.identifier.citationMicroelectronic engineering, 86 (7-9) , p. 1592 -1595-
dc.identifier.urihttp://hdl.handle.net/1942/31591-
dc.description.abstractFuture CMOS technologies will require the use of substrate material with a very high mobility in order to fulfil the performance requirements. Therefore, combination of Ge p-MOS with n-MOS devices made out of high mobility III/V compounds, such as GaAs, has recently received some attention for its possible use in advanced CIVICS applications. In this work, the physical, chemical and electrical properties of Al(2)O(3) high-kappa oxide deposited on Ge and GaAs, using Molecular Beam Deposition (MBD) technique, have been investigated. (C) 2009 Elsevier B.V. All rights reserved.-
dc.description.sponsorshipThis work is part of the IMEC Industrial Affiliation Program onGe/III–V devices and is supported by the European Commission’sproject FP7-ICT-DUALLOGIC no. 214579, ‘‘Dual-Channel CMOS for(sub)-22 nm High Performance Logic”-
dc.language.isoen-
dc.publisherELSEVIER SCIENCE BV-
dc.rights2009 Elsevier B.V. All rights reserved-
dc.subject.otherHigh mobility semiconductors-
dc.subject.otherPassivation-
dc.subject.otherMolecular beam epitaxy (MBE)-
dc.titleMolecular beam epitaxy passivation studies of Ge and III–V semiconductors for advanced CMOS-
dc.typeJournal Contribution-
local.bibliographicCitation.conferencedateJUN 28-JUL 07, 2009-
local.bibliographicCitation.conferencename16th Biennial Conference on Insulating Films on Semiconductors-
local.bibliographicCitation.conferenceplaceCambridge Univ, Clare Coll, Cambridge, ENGLAND-
dc.identifier.epage1595-
dc.identifier.issue7-9-
dc.identifier.spage1592-
dc.identifier.volume86-
local.bibliographicCitation.jcatA1-
dc.description.notesMerckling, C (corresponding author), IMEC, EPI, Kapeldreef 75, B-3001 Leuven, Belgium.-
dc.description.notesclement.merckling@imec.be-
local.publisher.placePO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS-
local.type.refereedRefereed-
local.type.specifiedArticle-
dc.identifier.doi10.1016/j.mee.2009.03.048-
dc.identifier.isiWOS:000267460100018-
dc.contributor.orcidKohen, David/0000-0002-2593-3355; El Kazzi, Mario/0000-0003-2975-0481;-
dc.contributor.orcidMerckling, Clement/0000-0003-3084-2543; houssa,-
dc.contributor.orcidmichel/0000-0003-1844-3515; heyns, marc/0000-0002-1199-4341; Brammertz,-
dc.contributor.orcidGuy/0000-0003-1404-7339-
dc.identifier.eissn-
local.provider.typewosris-
local.uhasselt.uhpubno-
local.description.affiliation[Merckling, C.; Kohen, D.; Bellenger, F.; Alian, A.; Brammertz, G.; Dekoster, J.; Caymax, M.; Meuris, M.; Heyns, M. M.] IMEC, EPI, B-3001 Leuven, Belgium.-
local.description.affiliation[Penaud, J.] Riber, F-95873 Bezons, France.-
local.description.affiliation[Bellenger, F.; Houssa, M.; Caymax, M.; Heyns, M. M.] Katholieke Univ Leuven, B-3001 Leuven, Belgium.-
local.description.affiliation[El-Kazzi, M.] SUN Synchrotron, F-91192 Gif Sur Yvette, France.-
item.contributorMerckling, C.-
item.contributorPenaud, J.-
item.contributorKohen, D.-
item.contributorBellenger, F.-
item.contributorAlian, A.-
item.contributorBRAMMERTZ, Guy-
item.contributorEl-Kazzi, M.-
item.contributorHoussa, M.-
item.contributorDekoster, J.-
item.contributorCaymax, M.-
item.contributorMEURIS, Marc-
item.contributorHeyns, M. M.-
item.accessRightsRestricted Access-
item.fulltextWith Fulltext-
item.fullcitationMerckling, C.; Penaud, J.; Kohen, D.; Bellenger, F.; Alian, A.; BRAMMERTZ, Guy; El-Kazzi, M.; Houssa, M.; Dekoster, J.; Caymax, M.; MEURIS, Marc & Heyns, M. M. (2009) Molecular beam epitaxy passivation studies of Ge and III–V semiconductors for advanced CMOS. In: Microelectronic engineering, 86 (7-9) , p. 1592 -1595.-
crisitem.journal.issn0167-9317-
crisitem.journal.eissn1873-5568-
Appears in Collections:Research publications
Files in This Item:
File Description SizeFormat 
1-s2.0-S0167931709002007-main.pdf
  Restricted Access		Published version419.66 kBAdobe PDFView/Open    Request a copy
Show simple item record

SCOPUSTM   
Citations

21
checked on Dec 14, 2025

WEB OF SCIENCETM
Citations

16
checked on Dec 12, 2025

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.