Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/31597
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dc.contributor.authorBRAMMERTZ, Guy-
dc.contributor.authorAlian, A.-
dc.contributor.authorLin, H. C.-
dc.contributor.authorNyns, L.-
dc.contributor.authorSioncke, S.-
dc.contributor.authorMerckling, C.-
dc.contributor.authorWang, W. -E-
dc.contributor.authorCaymax, M.-
dc.contributor.authorHoffmann, T. Y.-
dc.date.accessioned2020-08-06T09:48:47Z-
dc.date.available2020-08-06T09:48:47Z-
dc.date.issued2011-
dc.date.submitted2020-08-06T08:15:09Z-
dc.identifier.citationCHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2011 (CSTIC 2011), ELECTROCHEMICAL SOC INC, p. 1017 -1022-
dc.identifier.isbn978-1-60768-235-6-
dc.identifier.isbn978-1-60768-234-9-
dc.identifier.issn1938-5862-
dc.identifier.urihttp://hdl.handle.net/1942/31597-
dc.description.abstractWe will present the defect density at In0.53Ga0.47As and InP interfaces with ALD Al2O3 derived by use of the conductance method and from simulation of low frequency CV-curves. Consequences of the interface state distribution for MOS transistor device operation will be highlighted through 1-dimensional electrostatic simulations. The simulation results will be compared as much as possible to different state-of-the-art transistor results presented in literature.-
dc.language.isoen-
dc.publisherELECTROCHEMICAL SOC INC-
dc.relation.ispartofseriesECS Transactions-
dc.titleElectrical Quality of III-V/Oxide Interfaces: Good Enough for MOSFET Devices?-
dc.typeProceedings Paper-
dc.relation.edition1-
local.bibliographicCitation.conferencedate2011-
local.bibliographicCitation.conferencename10th China Semiconductor Technology International Conference (CSTIC)-
local.bibliographicCitation.conferenceplacePEOPLES R CHINA-
dc.identifier.epage1022-
dc.identifier.spage1017-
local.bibliographicCitation.jcatC1-
dc.description.notesBrammertz, G (corresponding author), IMEC, Kapeldreef 75, B-3001 Louvain, Belgium.-
local.publisher.place65 S MAIN ST, PENNINGTON, NJ 08534-2839 USA-
local.type.refereedRefereed-
local.type.specifiedProceedings Paper-
local.relation.ispartofseriesnr34-
dc.identifier.doi10.1149/1.3567708-
dc.identifier.isiWOS:000300456600157-
dc.contributor.orcidMerckling, Clement/0000-0003-3084-2543; Brammertz,-
dc.contributor.orcidGuy/0000-0003-1404-7339-
dc.identifier.eissn1938-6737-
local.provider.typewosris-
local.bibliographicCitation.btitleCHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2011 (CSTIC 2011)-
local.uhasselt.uhpubno-
local.description.affiliation[Brammertz, G.; Alian, A.; Lin, H. C.; Nyns, L.; Sioncke, S.; Merckling, C.; Wang, W. -E; Caymax, M.; Hoffmann, T. Y.] IMEC, B-3001 Louvain, Belgium.-
item.fulltextNo Fulltext-
item.contributorBRAMMERTZ, Guy-
item.contributorAlian, A.-
item.contributorLin, H. C.-
item.contributorNyns, L.-
item.contributorSioncke, S.-
item.contributorMerckling, C.-
item.contributorWang, W. -E-
item.contributorCaymax, M.-
item.contributorHoffmann, T. Y.-
item.fullcitationBRAMMERTZ, Guy; Alian, A.; Lin, H. C.; Nyns, L.; Sioncke, S.; Merckling, C.; Wang, W. -E; Caymax, M. & Hoffmann, T. Y. (2011) Electrical Quality of III-V/Oxide Interfaces: Good Enough for MOSFET Devices?. In: CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2011 (CSTIC 2011), ELECTROCHEMICAL SOC INC, p. 1017 -1022.-
item.accessRightsClosed Access-
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