Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/31598
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dc.contributor.authorSioncke, S.-
dc.contributor.authorLin, H. C.-
dc.contributor.authorAdelmann, C.-
dc.contributor.authorBRAMMERTZ, Guy-
dc.contributor.authorDelabie, A.-
dc.contributor.authorConard, T.-
dc.contributor.authorFranquet, A.-
dc.contributor.authorCaymax, M.-
dc.contributor.authorMEURIS, Marc-
dc.contributor.authorStruyf, H.-
dc.contributor.authorDe Gendt, S.-
dc.contributor.authorHeyns, M.-
dc.contributor.authorFleischmann, C.-
dc.contributor.authorTemst, K.-
dc.contributor.authorVantomme, A.-
dc.contributor.authorMueller, M.-
dc.contributor.authorKolbe, M.-
dc.contributor.authorBeckhoff, B.-
dc.contributor.authorSchmeisser, D.-
dc.contributor.authorTallarida, M.-
dc.date.accessioned2020-08-06T09:50:57Z-
dc.date.available2020-08-06T09:50:57Z-
dc.date.issued2010-
dc.date.submitted2020-08-06T08:54:35Z-
dc.identifier.citationATOMIC LAYER DEPOSITION APPLICATIONS 6, ELECTROCHEMICAL SOC INC, p. 9 -23-
dc.identifier.isbn978-1-60768-171-7-
dc.identifier.issn1938-5862-
dc.identifier.urihttp://hdl.handle.net/1942/31598-
dc.description.abstractHigh mobility channels are currently being explored to replace the Si channel in future technology nodes. However, until now the promising bulk properties are very difficult to translate into reality due to a bad passivation of the interface between the gate stack and the substrate. In this paper we want to emphasize that gate stack passivation is the result of a complex interplay between the surface treatment and the ALD process. During ALD on GaAs, the removal of surface oxides is observed. However, this effect does not lead to a good passivation. For Ge, the S-passivation of the interface is studied in combination with different high-kappa. It is clear that the Ge/S/Al2O3 interface is superior to the Ge/S/ZrO2 interface.-
dc.description.sponsorshipEuropean Commission Research Infrastructure Action - European Commission Joint Research Centre [026134(RI3)]; DualLogic [214579]; Fund for Scientific Research- Flanders (FWO)FWO; Flemish Concerted Action [GOA/ 09/ 006]; Belgian Interuniversity Attraction Poles research [IAP P6/ 42]; K. U. Leuven BOF [CREA/ 07/ 005]; Centers of Excellence Programs (INPAC) [EF/ 05/ 005]-
dc.language.isoen-
dc.publisherELECTROCHEMICAL SOC INC-
dc.relation.ispartofseriesECS Transactions-
dc.subject.otherGE(100) SURFACE-
dc.subject.otherOXIDE-
dc.subject.otherSULFUR-
dc.subject.otherGE-
dc.subject.otherDEPOSITION-
dc.subject.otherADSORPTION-
dc.titleALD on High Mobility Channels: Engineering the Proper Gate Stack Passivation-
dc.typeProceedings Paper-
dc.relation.edition2-
local.bibliographicCitation.conferencedateOCT 10-15, 2010-
local.bibliographicCitation.conferencename6th Symposium on Atomic Layer Deposition Applications as Part of the 218th Meeting of the Electrochemical-Society (ECS)-
local.bibliographicCitation.conferenceplaceLas Vegas, NV-
dc.identifier.epage23-
dc.identifier.spage9-
local.bibliographicCitation.jcatC1-
dc.description.notesSioncke, S (corresponding author), IMEC, Kapeldreef 75, B-3001 Louvain, Belgium.-
local.publisher.place65 S MAIN ST, PENNINGTON, NJ 08534-2839 USA-
local.type.refereedRefereed-
local.type.specifiedProceedings Paper-
local.relation.ispartofseriesnr33-
dc.identifier.doi10.1149/1.3485237-
dc.identifier.isiWOS:000313617900002-
dc.contributor.orcidTallarida, Massimo/0000-0002-1438-3466; Temst,-
dc.contributor.orcidKristiaan/0000-0002-1377-5097; heyns, marc/0000-0002-1199-4341; Kolbe,-
dc.contributor.orcidMichael/0000-0001-9732-5757; Adelmann, Christoph/0000-0002-4831-3159;-
dc.contributor.orcidBrammertz, Guy/0000-0003-1404-7339; Vantomme, Andre/0000-0001-9158-6534-
local.provider.typewosris-
local.bibliographicCitation.btitleATOMIC LAYER DEPOSITION APPLICATIONS 6-
local.uhasselt.uhpubno-
local.description.affiliation[Sioncke, S.; Lin, H. C.; Adelmann, C.; Brammertz, G.; Delabie, A.; Conard, T.; Franquet, A.; Caymax, M.; Meuris, M.; Struyf, H.; De Gendt, S.; Heyns, M.] IMEC, Kapeldreef 75, B-3001 Louvain, Belgium.-
local.description.affiliation[Fleischmann, C.; Temst, K.; Vantomme, A.] Katholieke Univ Leuven, Inst Kern Stralingsfys, B-3001 Heverlee, Belgium.-
local.description.affiliation[Fleischmann, C.; Temst, K.; Vantomme, A.] Katholieke Univ Leuven, INPAC, B-3001 Heverlee, Belgium.-
local.description.affiliation[Mueller, M.; Kolbe, M.; Beckhoff, B.] Physikalisch Tech Bundesanstalt PTB, D-10587 Berlin, Germany.-
local.description.affiliation[Schmeisser, D.; Tallarida, M.] Brandenburg Tech Univ Cottbus, D-03046 Cottbus, Germany.-
item.fulltextNo Fulltext-
item.contributorSioncke, S.-
item.contributorLin, H. C.-
item.contributorAdelmann, C.-
item.contributorBRAMMERTZ, Guy-
item.contributorDelabie, A.-
item.contributorConard, T.-
item.contributorFranquet, A.-
item.contributorCaymax, M.-
item.contributorMEURIS, Marc-
item.contributorStruyf, H.-
item.contributorDe Gendt, S.-
item.contributorHeyns, M.-
item.contributorFleischmann, C.-
item.contributorTemst, K.-
item.contributorVantomme, A.-
item.contributorMueller, M.-
item.contributorKolbe, M.-
item.contributorBeckhoff, B.-
item.contributorSchmeisser, D.-
item.contributorTallarida, M.-
item.fullcitationSioncke, S.; Lin, H. C.; Adelmann, C.; BRAMMERTZ, Guy; Delabie, A.; Conard, T.; Franquet, A.; Caymax, M.; MEURIS, Marc; Struyf, H.; De Gendt, S.; Heyns, M.; Fleischmann, C.; Temst, K.; Vantomme, A.; Mueller, M.; Kolbe, M.; Beckhoff, B.; Schmeisser, D. & Tallarida, M. (2010) ALD on High Mobility Channels: Engineering the Proper Gate Stack Passivation. In: ATOMIC LAYER DEPOSITION APPLICATIONS 6, ELECTROCHEMICAL SOC INC, p. 9 -23.-
item.accessRightsClosed Access-
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