Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/31600
Full metadata record
DC FieldValueLanguage
dc.contributor.authorAfanas'ev, V. V.-
dc.contributor.authorStesmans, A.-
dc.contributor.authorBRAMMERTZ, Guy-
dc.contributor.authorDelabie, A.-
dc.contributor.authorSionke, S.-
dc.contributor.authorO'Mahony, A.-
dc.contributor.authorPovey, I. M.-
dc.contributor.authorPemble, M. E.-
dc.contributor.authorO'Connor, E.-
dc.contributor.authorHurley, P. K.-
dc.contributor.authorNewcomb, S. B.-
dc.date.accessioned2020-08-06T10:03:42Z-
dc.date.available2020-08-06T10:03:42Z-
dc.date.issued2009-
dc.date.submitted2020-08-06T09:06:59Z-
dc.identifier.citationMicroelectronic engineering, 86 (7-9) , p. 1550 -1553-
dc.identifier.urihttp://hdl.handle.net/1942/31600-
dc.description.abstractThe electron energy band alignment at interfaces of InxGa1-xAs (0 <= x <= 0.53) with atomic-layer deposited insulators Al2O3 and HfO2 is characterized using combined measurements of internal photoemission of electrons and photoconductivity. The measured energy of the InxGa1-x As valence band top is found to be only marginally influenced by the semiconductor composition. This result suggests that the observed band-gap narrowing from 1.42 to 0.75 eV when the In content increases from 0 to 0.53 occurs mostly through downshift of the semiconductor conduction band bottom. Electron states originating from the interfacial oxidation of InxGa1-xAs lead to reduction of the electron barrier at the semiconductor/oxide interface. (C) 2009 Elsevier B.V. All rights reserved,-
dc.description.sponsorshipThe work done at KU Leuven was supported by the ‘‘Fonds Wetenschappelijk Onderzoek (FWO) Vlaanderen” through Grant1.5.057.07. The authors from Tyndall would like to acknowledge Science Foundation Ireland (Grants 05/IN/1751 and 07/SRC/I1172) for financial support of the work-
dc.language.isoen-
dc.publisherELSEVIER SCIENCE BV-
dc.rights2009 Elsevier B.V. All rights reserved.-
dc.subject.otherSemiconductor-insulator interface-
dc.subject.otherInterface barrier-
dc.subject.otherInternal photoemission-
dc.titleBand offsets at interfaces of (100)InxGa1−xAs (0⩽x⩽0.53) with Al2O3 and HfO2-
dc.typeJournal Contribution-
local.bibliographicCitation.conferencedateJUN 28-JUL 07, 2009-
local.bibliographicCitation.conferencename16th Biennial Conference on Insulating Films on Semiconductors-
local.bibliographicCitation.conferenceplaceCambridge Univ, Clare Coll, Cambridge, ENGLAND-
dc.identifier.epage1553-
dc.identifier.issue7-9-
dc.identifier.spage1550-
dc.identifier.volume86-
local.bibliographicCitation.jcatA1-
dc.description.notesAfanas'ev, VV (corresponding author), Katholieke Univ Leuven, Dept Phys, Celestijnenlaan 200D, B-3001 Louvain, Belgium.-
dc.description.notesValeri.Afanasiev@fys.kuleuven.be-
local.publisher.placePO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS-
local.type.refereedRefereed-
local.type.specifiedArticle-
dc.identifier.doi10.1016/j.mee.2009.03.003-
dc.identifier.isiWOS:000267460100007-
dc.contributor.orcidPovey, Ian M/0000-0002-7877-6664; Povey, Ian/0000-0002-7877-6664;-
dc.contributor.orcidAfanas'ev, Valeri/0000-0001-5018-4539; Brammertz,-
dc.contributor.orcidGuy/0000-0003-1404-7339; Hurley, Paul/0000-0001-5137-721X; Pemble,-
dc.contributor.orcidMartyn/0000-0002-2349-4520-
dc.identifier.eissn-
local.provider.typewosris-
local.uhasselt.uhpubno-
local.description.affiliation[Afanas'ev, V. V.; Stesmans, A.] Katholieke Univ Leuven, Dept Phys, B-3001 Louvain, Belgium.-
local.description.affiliation[Brammertz, G.; Delabie, A.; Sionke, S.] IMEC, B-3001 Louvain, Belgium.-
local.description.affiliation[O'Mahony, A.; Povey, I. M.; Pemble, M. E.; O'Connor, E.; Hurley, P. K.] Natl Univ Ireland Univ Coll Cork, Tyndall Natl Inst, Cork, Ireland.-
local.description.affiliation[Newcomb, S. B.] Glebe Sci Ltd, Newport, Tipperary, Ireland.-
item.fulltextWith Fulltext-
item.contributorAfanas'ev, V. V.-
item.contributorStesmans, A.-
item.contributorBRAMMERTZ, Guy-
item.contributorDelabie, A.-
item.contributorSionke, S.-
item.contributorO'Mahony, A.-
item.contributorPovey, I. M.-
item.contributorPemble, M. E.-
item.contributorO'Connor, E.-
item.contributorHurley, P. K.-
item.contributorNewcomb, S. B.-
item.fullcitationAfanas'ev, V. V.; Stesmans, A.; BRAMMERTZ, Guy; Delabie, A.; Sionke, S.; O'Mahony, A.; Povey, I. M.; Pemble, M. E.; O'Connor, E.; Hurley, P. K. & Newcomb, S. B. (2009) Band offsets at interfaces of (100)InxGa1−xAs (0⩽x⩽0.53) with Al2O3 and HfO2. In: Microelectronic engineering, 86 (7-9) , p. 1550 -1553.-
item.accessRightsRestricted Access-
crisitem.journal.issn0167-9317-
crisitem.journal.eissn1873-5568-
Appears in Collections:Research publications
Files in This Item:
File Description SizeFormat 
1-s2.0-S016793170900166X-main.pdf
  Restricted Access		Published version356.54 kBAdobe PDFView/Open    Request a copy
Show simple item record

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.