Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/31607
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dc.contributor.authorWaldron, Niamh-
dc.contributor.authorWang, Gang-
dc.contributor.authorNguyen, Ngoc Duy-
dc.contributor.authorOrzali, Tommaso-
dc.contributor.authorMerckling, Clement-
dc.contributor.authorOng, Patrick-
dc.contributor.authorBRAMMERTZ, Guy-
dc.contributor.authorEneman, Geert-
dc.contributor.authorWinderickx, Gillis-
dc.contributor.authorCaymax, Matty-
dc.contributor.authorHellings, Geert-
dc.contributor.authorMEURIS, Marc-
dc.contributor.authorHoriguchi, Naoto-
dc.contributor.authorThean, Aaron-
dc.date.accessioned2020-08-06T12:50:59Z-
dc.date.available2020-08-06T12:50:59Z-
dc.date.issued2012-
dc.date.submitted2020-08-06T09:51:07Z-
dc.identifier.citation2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings, p. 1 -2-
dc.identifier.isbn978-1-4577-1865-6-
dc.identifier.isbn978-1-4577-1864-9-
dc.identifier.isbn978-1-4577-1863-2-
dc.identifier.urihttp://hdl.handle.net/1942/31607-
dc.language.isoen-
dc.titleIntegration of III-V on Si for High-Mobility CMOS-
dc.typeProceedings Paper-
local.bibliographicCitation.conferencedate4-6 June 2012-
local.bibliographicCitation.conferencename6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012-
local.bibliographicCitation.conferenceplaceBerkeley, CA; United States-
dc.identifier.epage2-
dc.identifier.spage1-
local.bibliographicCitation.jcatC1-
local.type.refereedRefereed-
local.type.specifiedProceedings Paper-
dc.identifier.doi10.1109/ISTDM.2012.6222422-
local.provider.typeCrossRef-
local.bibliographicCitation.btitle2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings-
local.uhasselt.uhpubno-
item.accessRightsClosed Access-
item.fullcitationWaldron, Niamh; Wang, Gang; Nguyen, Ngoc Duy; Orzali, Tommaso; Merckling, Clement; Ong, Patrick; BRAMMERTZ, Guy; Eneman, Geert; Winderickx, Gillis; Caymax, Matty; Hellings, Geert; MEURIS, Marc; Horiguchi, Naoto & Thean, Aaron (2012) Integration of III-V on Si for High-Mobility CMOS. In: 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings, p. 1 -2.-
item.fulltextNo Fulltext-
item.contributorWaldron, Niamh-
item.contributorWang, Gang-
item.contributorNguyen, Ngoc Duy-
item.contributorOrzali, Tommaso-
item.contributorMerckling, Clement-
item.contributorOng, Patrick-
item.contributorBRAMMERTZ, Guy-
item.contributorEneman, Geert-
item.contributorWinderickx, Gillis-
item.contributorCaymax, Matty-
item.contributorHellings, Geert-
item.contributorMEURIS, Marc-
item.contributorHoriguchi, Naoto-
item.contributorThean, Aaron-
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