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http://hdl.handle.net/1942/31609
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DC Field | Value | Language |
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dc.contributor.author | Nguyen, N. D. | - |
dc.contributor.author | Wang, G. | - |
dc.contributor.author | BRAMMERTZ, Guy | - |
dc.contributor.author | Leys, M. | - |
dc.contributor.author | Waldron, N. | - |
dc.contributor.author | WINDERICKX, Jori | - |
dc.contributor.author | Lismont, K. | - |
dc.contributor.author | Dekoster, J. | - |
dc.contributor.author | Loo, R. | - |
dc.contributor.author | MEURIS, Marc | - |
dc.contributor.author | Degroote, S. | - |
dc.contributor.author | Buttita, F. | - |
dc.contributor.author | O'Neil, B. | - |
dc.contributor.author | Feron, O. | - |
dc.contributor.author | Lindner, J. | - |
dc.contributor.author | Schulte, F. | - |
dc.contributor.author | Schineller, B. | - |
dc.contributor.author | Heuken, M. | - |
dc.contributor.author | Caymax, M. | - |
dc.date.accessioned | 2020-08-06T12:57:09Z | - |
dc.date.available | 2020-08-06T12:57:09Z | - |
dc.date.issued | 2010 | - |
dc.date.submitted | 2020-08-06T09:23:22Z | - |
dc.identifier.citation | SIGE, GE, AND RELATED COMPOUNDS 4: MATERIALS, PROCESSING, AND DEVICES, ELECTROCHEMICAL SOC INC, p. 933 -939 | - |
dc.identifier.isbn | 978-1-60768-175-5 | - |
dc.identifier.issn | 1938-5862 | - |
dc.identifier.uri | http://hdl.handle.net/1942/31609 | - |
dc.description.abstract | We have deposited III-V alloys on 200 mm Si miscut wafers with an oxide pattern. The selective epitaxial growth (SEG) of GaAs in large windows defined by SiO2 lines on a thick strained-relaxed Ge buffer layer served as a test vehicle which allowed us to demonstrate the integration of a III-V material deposition process step in a Si manufacturing line using an industrial reactor. High quality GaAs layers with high wafer-scale thickness uniformity were achieved. In a subsequent step, SEG of InP was successfully performed on wafers with a 300 nm shallow trench isolation pattern. The seed layer morphology depended on the treatment of the Ge surface and on the growth temperature. The orientation of the trench with respect to the substrate miscut direction had an impact on the quality of the InP filling. Despite of the challenges, such an approach for the integration of III-V materials on Si substrates allowed us to obtain extended-defect-free epitaxial regions suitable for the fabrication of high-performance devices. | - |
dc.description.sponsorship | European Union FP7 - European Union (EU) [213238] | - |
dc.language.iso | en | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.relation.ispartofseries | ECS Transactions | - |
dc.subject.other | HIGH-QUALITY GE | - |
dc.subject.other | GAAS | - |
dc.subject.other | TRENCHES | - |
dc.subject.other | GAP | - |
dc.title | Selective Epitaxial Growth of III-V Semiconductor Heterostructures on Si Substrates for Logic Applications | - |
dc.type | Proceedings Paper | - |
dc.relation.edition | 6 | - |
local.bibliographicCitation.conferencedate | OCT 10-15, 2010 | - |
local.bibliographicCitation.conferencename | 4th SiGe, Ge, and Related Compounds - Materials, Processing and Devices. Symposium held at the 218th Meeting of the Electrochemical-Society (ECS) | - |
local.bibliographicCitation.conferenceplace | Las Vegas, NV | - |
dc.identifier.epage | 939 | - |
dc.identifier.spage | 933 | - |
local.bibliographicCitation.jcat | C1 | - |
dc.description.notes | Nguyen, ND (corresponding author), IMEC, Kapeldreef 75, B-3001 Louvain, Belgium. | - |
local.publisher.place | 65 S MAIN ST, PENNINGTON, NJ 08534-2839 USA | - |
local.type.refereed | Refereed | - |
local.type.specified | Proceedings Paper | - |
local.relation.ispartofseriesnr | 33 | - |
dc.identifier.doi | 10.1149/1.3487625 | - |
dc.identifier.isi | WOS:000314957600096 | - |
dc.contributor.orcid | Loo, Roger/0000-0003-3513-6058; FERON, Olivier/0000-0001-5360-0286; | - |
dc.contributor.orcid | Nguyen, Ngoc Duy/0000-0002-0142-1611; Brammertz, Guy/0000-0003-1404-7339 | - |
local.provider.type | wosris | - |
local.bibliographicCitation.btitle | SIGE, GE, AND RELATED COMPOUNDS 4: MATERIALS, PROCESSING, AND DEVICES | - |
local.uhasselt.uhpub | no | - |
local.description.affiliation | [Nguyen, N. D.; Wang, G.; Brammertz, G.; Leys, M.; Waldron, N.; Winderickx, G.; Lismont, K.; Dekoster, J.; Loo, R.; Meuris, M.; Degroote, S.; Caymax, M.] IMEC, Kapeldreef 75, B-3001 Louvain, Belgium. | - |
local.description.affiliation | [Nguyen, N. D.] Univ Liege, Inst Phys, B-4000 Liege, Belgium. | - |
local.description.affiliation | [Buttita, F.; O'Neil, B.; Feron, O.; Lindner, J.; Schulte, F.; Schineller, B.; Heuken, M.] AIXTRON AG, D-52124 Herzogenrath, Germany. | - |
item.fullcitation | Nguyen, N. D.; Wang, G.; BRAMMERTZ, Guy; Leys, M.; Waldron, N.; WINDERICKX, Jori; Lismont, K.; Dekoster, J.; Loo, R.; MEURIS, Marc; Degroote, S.; Buttita, F.; O'Neil, B.; Feron, O.; Lindner, J.; Schulte, F.; Schineller, B.; Heuken, M. & Caymax, M. (2010) Selective Epitaxial Growth of III-V Semiconductor Heterostructures on Si Substrates for Logic Applications. In: SIGE, GE, AND RELATED COMPOUNDS 4: MATERIALS, PROCESSING, AND DEVICES, ELECTROCHEMICAL SOC INC, p. 933 -939. | - |
item.fulltext | No Fulltext | - |
item.contributor | Nguyen, N. D. | - |
item.contributor | Wang, G. | - |
item.contributor | BRAMMERTZ, Guy | - |
item.contributor | Leys, M. | - |
item.contributor | Waldron, N. | - |
item.contributor | WINDERICKX, Jori | - |
item.contributor | Lismont, K. | - |
item.contributor | Dekoster, J. | - |
item.contributor | Loo, R. | - |
item.contributor | MEURIS, Marc | - |
item.contributor | Degroote, S. | - |
item.contributor | Buttita, F. | - |
item.contributor | O'Neil, B. | - |
item.contributor | Feron, O. | - |
item.contributor | Lindner, J. | - |
item.contributor | Schulte, F. | - |
item.contributor | Schineller, B. | - |
item.contributor | Heuken, M. | - |
item.contributor | Caymax, M. | - |
item.accessRights | Closed Access | - |
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