Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/31614
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dc.contributor.authorCantoro, M.-
dc.contributor.authorWang, G.-
dc.contributor.authorLin, H. C.-
dc.contributor.authorKlekachev, A. V.-
dc.contributor.authorRichard, O.-
dc.contributor.authorBender, H.-
dc.contributor.authorKim, T. -G.-
dc.contributor.authorClemente, F.-
dc.contributor.authorAdelmann, C.-
dc.contributor.authorvan der Veen, M. H.-
dc.contributor.authorBRAMMERTZ, Guy-
dc.contributor.authorDegroote, S.-
dc.contributor.authorLeys, M.-
dc.contributor.authorCaymax, M.-
dc.contributor.authorHeyns, M. M.-
dc.contributor.authorDe Gendt, S.-
dc.date.accessioned2020-08-06T13:15:18Z-
dc.date.available2020-08-06T13:15:18Z-
dc.date.issued2011-
dc.date.submitted2020-08-06T08:20:42Z-
dc.identifier.citationPHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 208 (1) , p. 129 -135-
dc.identifier.urihttp://hdl.handle.net/1942/31614-
dc.description.abstractIn this paper, we show the results of experiments of InAs nanowire (NW) growth on (111)-oriented Si wafers. The NWs, grown at 620 degrees C by metal-organic vapor-phase epitaxy, are vertically aligned and similar to 30 nm in diameter. Their structural properties are studied by transmission electron microscopy, evidencing a polytypic character, and the vibrational properties by Raman spectroscopy. An assessment of their electrical transport properties is carried out by measuring back-gated, single InAs NW field-effect transistors. The absence of a catalyst ensures the compatibility of the NW growth process with current CMOS technology. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim-
dc.description.sponsorshipWe gratefully acknowledge Y. Mols,E. Vandenplas, and P. Vicca for technical help and J. Feyaerts, andM. Germain for access to facilities. We are also grateful to R. Loo, R.Rooyackers (imec), B. Mandl, T. Ma˚rtensson, M. T. Borgstro¨m. C.Thelander, and L. Samuelson (University of Lund, Sweden) foruseful advice-
dc.language.isoen-
dc.publisherWILEY-V C H VERLAG GMBH-
dc.rights2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim-
dc.subject.otherIII-V NANOWIRES-
dc.subject.otherOPTOELECTRONIC DEVICES-
dc.subject.otherSILICON NANOWIRES-
dc.subject.otherEPITAXIAL-GROWTH-
dc.subject.otherSCATTERING-
dc.subject.otherTRANSISTORS-
dc.subject.otherIII-V semiconductors-
dc.subject.otherelectronic transport-
dc.subject.otherInAs-
dc.subject.otherMOVPE-
dc.subject.othernanowires-
dc.subject.otherRaman spectroscopy-
dc.titleLarge-area, catalyst-free heteroepitaxy of InAs nanowires on Si by MOVPE-
dc.titleLarge-area, catalyst-free heteroepitaxy of InAs nanowires on Si by MOVPE-
dc.typeJournal Contribution-
dc.identifier.epage135-
dc.identifier.issue1-
dc.identifier.spage129-
dc.identifier.volume208-
local.bibliographicCitation.jcatA1-
dc.description.notesCantoro, M (corresponding author), IMEC, Kapeldreef 75, B-3001 Louvain, Belgium.-
dc.description.notescantoro@imec.be-
local.publisher.placeBOSCHSTRASSE 12, D-69469 WEINHEIM, GERMANY-
local.type.refereedRefereed-
local.type.specifiedArticle-
dc.identifier.doi10.1002/pssa.201026396-
dc.identifier.isiWOS:000287295100020-
dc.contributor.orcidheyns, marc/0000-0002-1199-4341; Adelmann,-
dc.contributor.orcidChristoph/0000-0002-4831-3159; Brammertz, Guy/0000-0003-1404-7339-
dc.identifier.eissn-
local.provider.typewosris-
local.uhasselt.uhpubno-
local.description.affiliation[Cantoro, M.; Wang, G.; Lin, H. C.; Klekachev, A. V.; Richard, O.; Bender, H.; Kim, T. -G.; Clemente, F.; Adelmann, C.; van der Veen, M. H.; Brammertz, G.; Degroote, S.; Leys, M.; Caymax, M.; Heyns, M. M.; De Gendt, S.] IMEC, B-3001 Louvain, Belgium.-
local.description.affiliation[Cantoro, M.; Klekachev, A. V.] Katholieke Univ Leuven, Dept Phys & Astron, B-3001 Louvain, Belgium.-
local.description.affiliation[Wang, G.; Lin, H. C.; Kim, T. -G.; Heyns, M. M.] Katholieke Univ Leuven, Dept Met & Mat Engn, B-3001 Louvain, Belgium.-
local.description.affiliation[De Gendt, S.] Katholieke Univ Leuven, Dept Chem, B-3001 Louvain, Belgium.-
item.fulltextWith Fulltext-
item.contributorCantoro, M.-
item.contributorWang, G.-
item.contributorLin, H. C.-
item.contributorKlekachev, A. V.-
item.contributorRichard, O.-
item.contributorBender, H.-
item.contributorKim, T. -G.-
item.contributorClemente, F.-
item.contributorAdelmann, C.-
item.contributorvan der Veen, M. H.-
item.contributorBRAMMERTZ, Guy-
item.contributorDegroote, S.-
item.contributorLeys, M.-
item.contributorCaymax, M.-
item.contributorHeyns, M. M.-
item.contributorDe Gendt, S.-
item.fullcitationCantoro, M.; Wang, G.; Lin, H. C.; Klekachev, A. V.; Richard, O.; Bender, H.; Kim, T. -G.; Clemente, F.; Adelmann, C.; van der Veen, M. H.; BRAMMERTZ, Guy; Degroote, S.; Leys, M.; Caymax, M.; Heyns, M. M. & De Gendt, S. (2011) Large-area, catalyst-free heteroepitaxy of InAs nanowires on Si by MOVPE. In: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 208 (1) , p. 129 -135.-
item.accessRightsRestricted Access-
crisitem.journal.issn1862-6300-
crisitem.journal.eissn1862-6319-
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