Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/31615
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dc.contributor.authorMolle, Alessandro-
dc.contributor.authorBRAMMERTZ, Guy-
dc.contributor.authorLamagna, Luca-
dc.contributor.authorFanciulli, Marco-
dc.contributor.authorMEURIS, Marc-
dc.contributor.authorSpiga, Sabina-
dc.date.accessioned2020-08-06T13:18:14Z-
dc.date.available2020-08-06T13:18:14Z-
dc.date.issued2009-
dc.date.submitted2020-08-06T08:23:26Z-
dc.identifier.citationApplied physics letters, 95 (2) (Art N° 023507)-
dc.identifier.urihttp://hdl.handle.net/1942/31615-
dc.description.abstractLa-doped ZrO2 thin films were grown by O-3-based atomic layer deposition on III-V (GaAs,In0.15Ga0.85As) substrates through direct growth and after intercalation of a Ge interface passivation layer. The interface composition was investigated by x-ray photoelectron spectroscopy, revealing a dramatic reduction of semiconductor-oxygen bonding upon Ge passivation. An improved electrical quality of the Ge-passivated interfaces due to the removal of Ga3+ bonding related traps is demonstrated by conductance measurements at various temperatures.-
dc.description.sponsorshipWe acknowledge M. Alia (MDM) for Ge deposition and ARAMIS Project for partial funding-
dc.language.isoen-
dc.publisherAMER INST PHYSICS-
dc.rights2009 American Institute of Physics.-
dc.subject.otheratomic layer deposition-
dc.subject.otherbonds (chemical)-
dc.subject.otherelemental semiconductors-
dc.subject.othergermanium-
dc.subject.otherlanthanum-
dc.subject.otherpassivation-
dc.subject.othersemiconductor-insulator boundaries-
dc.subject.othersurface composition-
dc.subject.otherthin films-
dc.subject.otherX-ray photoelectron spectra-
dc.subject.otherzirconium compounds-
dc.subject.otherOXIDATION-
dc.titleGe-based interface passivation for atomic layer deposited La-doped ZrO2 on III-V compound (GaAs,In0.15Ga0.85As) substrates-
dc.typeJournal Contribution-
dc.identifier.issue2-
dc.identifier.volume95-
local.bibliographicCitation.jcatA1-
dc.description.notesMolle, A (corresponding author), INFM, CNR, Lab Nazl MDM, Via C Olivetti 2, I-20041 Agrate Brianza Milano, Italy.-
dc.description.notesalessandro.molle@mdm.infm.it-
local.publisher.placeCIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA-
local.type.refereedRefereed-
local.type.specifiedArticle-
local.bibliographicCitation.artnr023507-
dc.identifier.doi10.1063/1.3182734-
dc.identifier.isiWOS:000268089200109-
dc.contributor.orcidSpiga, Sabina/0000-0001-7293-7503; Molle,-
dc.contributor.orcidAlessandro/0000-0002-3860-4120; Fanciulli, Marco/0000-0003-2951-0859;-
dc.contributor.orcidBrammertz, Guy/0000-0003-1404-7339-
dc.identifier.eissn-
local.provider.typewosris-
local.uhasselt.uhpubno-
local.description.affiliation[Molle, Alessandro; Lamagna, Luca; Fanciulli, Marco; Spiga, Sabina] INFM, CNR, Lab Nazl MDM, I-20041 Agrate Brianza Milano, Italy.-
local.description.affiliation[Brammertz, Guy; Meuris, Marc] IMEC VZW, B-3001 Louvain, Belgium.-
local.description.affiliation[Fanciulli, Marco] Univ Milano Bicocca, Dipartimento Sci Mat, Milan, Italy.-
item.fullcitationMolle, Alessandro; BRAMMERTZ, Guy; Lamagna, Luca; Fanciulli, Marco; MEURIS, Marc & Spiga, Sabina (2009) Ge-based interface passivation for atomic layer deposited La-doped ZrO2 on III-V compound (GaAs,In0.15Ga0.85As) substrates. In: Applied physics letters, 95 (2) (Art N° 023507).-
item.accessRightsRestricted Access-
item.contributorMolle, Alessandro-
item.contributorBRAMMERTZ, Guy-
item.contributorLamagna, Luca-
item.contributorFanciulli, Marco-
item.contributorMEURIS, Marc-
item.contributorSpiga, Sabina-
item.fulltextWith Fulltext-
crisitem.journal.issn0003-6951-
crisitem.journal.eissn1077-3118-
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