High mobility channel materials and novel devices for scaling of nanoeelectronics beyond the Si roadmap

Abstract

The use of high mobility channel materials such as Ge and III/V compounds and some novel device concepts are being explored for future CMOS applications. Various passivation schemes are investigated for the Ge surface, such as GeO2 combined with high-κ deposition or the use of a thin Si layer, and demonstrated in short channel Ge MOS devices. Although much progress is being made on the electrical passivation of the III/V materials, typical defect levels remain high at the III/V - high-κ interface. A good insight into the origin of the defects was obtained from a combination of theoretical modeling and experimental data. The use of these new materials also opens the path towards the introduction of novel device structures such as heterojunction Tunnel FET's, which can be used to lower the supply voltage and reduce the power consumption. The results illustrate the possibilities that are created by the combination of new materials and devices to allow scaling of nanoelectronics beyond the Si roadmap. © 2010 Materials Research Society.