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Title: | Key Issues for the Development of a Ge CMOS Device in an Advanced IC Circuit | Authors: | MEURIS, Marc Martens, K. De Jaegar, B. Van Steenbergen, J. Bonzom, Renaud Caymax, Matty R. Houssa, M. Kaczer, Ben Leys, Frederik NELIS, Daniel Opsomer, Karl Pourghaderi, A. M. Satta, A. Simoen, Eddy R. Terzieva, Valentina Souriau, Laurent Bellenger, F. BRAMMERTZ, Guy Nicholas, G. Scarozza, M. Huyghebaert, C. Winderickx, Gillis Loo, Roger Clarysse, Trudo Conard, Thierry Bender, Hugo Benedetti, Alessandro Todi, R. Delabie, A. Hellin, David Van Daele, Benny Sioncke, Sonja Mertens, Paul W. De Meyer, Krtistien Van Elshocht, Sven Vandervorst, Wilfried Zimmerman, Paul Brunco, David P. Heyns, Marc M. |
Issue Date: | 2006 | Publisher: | Source: | ECS Transactions, , p. 783 -787 | Abstract: | Passivation of the channel in the gate stack is the most important problem for introducing another material than silicon into the channel of CMOS devices. In order to compare the mobility values of different passivation techniques, we propose to use a parameter, which is a proportional to the drive current of the transistor. We call this parameter the channel mobility value and it is calculated from the transistor equation. This channel mobility value can be used to benchmark more consistently the different passivation techniques on germanium or other semiconductor materials. A second issue for CMOS scaling on Ge is the poor performance of nMOS devices and there seems no solution in sight for this problem. Therefore we promote the investigation of technologies to allow the introduction of III-V materials on Ge to make nMOS devices in III-V devices complementary with Ge pMOS. A third key issue is the development of a manufacturable and low defect density germanium-on-insulator (GeOI) technology on 200mm and larger substrate sizes. copyright The Electrochemical Society. | Keywords: | Drive currents;Gate stacks;Ge CMOS devices;Transistor equations;Density (specific gravity);Gates (transistor);Germanium compounds;Parameter estimation;Passivation;Semiconducting silicon compounds;CMOS integrated circuits | Document URI: | http://hdl.handle.net/1942/31633 | DOI: | 10.1149/1.2355873 | Category: | C1 | Type: | Proceedings Paper |
Appears in Collections: | Research publications |
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