Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/31634
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dc.contributor.authorHeyns, M.-
dc.contributor.authorAlian, A.-
dc.contributor.authorBRAMMERTZ, Guy-
dc.contributor.authorCaymax, M.-
dc.contributor.authorChang, Y. C.-
dc.contributor.authorChu, L. K.-
dc.contributor.authorDe Jaeger, B.-
dc.contributor.authorEneman, G.-
dc.contributor.authorGencarelli, F.-
dc.contributor.authorGroeseneken, G.-
dc.contributor.authorHellings, G.-
dc.contributor.authorHikavyy, A.-
dc.contributor.authorHoffmann, T. Y.-
dc.contributor.authorHoussa, M.-
dc.contributor.authorHuyghebaert, C.-
dc.contributor.authorLeonelli, D.-
dc.contributor.authorLin, D.-
dc.contributor.authorLoo, R.-
dc.contributor.authorMagnus, W.-
dc.contributor.authorMerckling, C.-
dc.contributor.authorMEURIS, Marc-
dc.contributor.authorMitard, J.-
dc.contributor.authorNyns, L.-
dc.contributor.authorOrzali, T.-
dc.contributor.authorRooyackers, R.-
dc.contributor.authorSioncke, S.-
dc.contributor.authorSoree, B.-
dc.contributor.authorSun, X.-
dc.contributor.authorVandooren, A.-
dc.contributor.authorVerhulst, A. S.-
dc.contributor.authorVincent, B.-
dc.contributor.authorWaldron, N.-
dc.contributor.authorWang, G.-
dc.contributor.authorWang, W. E.-
dc.contributor.authorWitters, L.-
dc.date.accessioned2020-08-10T13:07:33Z-
dc.date.available2020-08-10T13:07:33Z-
dc.date.issued2011-
dc.date.submitted2020-08-06T08:37:41Z-
dc.identifier.citation2011 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), IEEE,-
dc.identifier.isbn978-1-4577-0505-2-
dc.identifier.urihttp://hdl.handle.net/1942/31634-
dc.language.isoen-
dc.publisherIEEE-
dc.subject.otherATOMIC LAYER DEPOSITION-
dc.titleAdvancing CMOS beyond the Si roadmap with Ge and III/V devices-
dc.typeProceedings Paper-
local.bibliographicCitation.conferencedateDEC 05-07, 2011-
local.bibliographicCitation.conferencenameIEEE International Electron Devices Meeting (IEDM)-
local.bibliographicCitation.conferenceplaceWashington, DC-
local.bibliographicCitation.jcatC1-
dc.description.notesHeyns, M (corresponding author), IMEC, Kapeldreef 75, B-3001 Louvain, Belgium.-
local.publisher.place345 E 47TH ST, NEW YORK, NY 10017 USA-
local.type.refereedRefereed-
local.type.specifiedProceedings Paper-
dc.identifier.isiWOS:000300015300075-
dc.contributor.orcidhoussa, michel/0000-0003-1844-3515; Loo, Roger/0000-0003-3513-6058; Sun,-
dc.contributor.orcidXiao/0000-0002-7913-7186; Soree, Bart/0000-0002-4157-1956; Groeseneken,-
dc.contributor.orcidGuido/0000-0003-3763-2098; Merckling, Clement/0000-0003-3084-2543;-
dc.contributor.orcidheyns, marc/0000-0002-1199-4341;-
local.provider.typewosris-
local.bibliographicCitation.btitle2011 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)-
local.uhasselt.uhpubno-
local.description.affiliation[Heyns, M.; Alian, A.; Brammertz, G.; Caymax, M.; Chang, Y. C.; Chu, L. K.; De Jaeger, B.; Eneman, G.; Gencarelli, F.; Groeseneken, G.; Hellings, G.; Hikavyy, A.; Hoffmann, T. Y.; Houssa, M.; Huyghebaert, C.; Leonelli, D.; Lin, D.; Loo, R.; Magnus, W.; Merckling, C.; Meuris, M.; Mitard, J.; Nyns, L.; Orzali, T.; Rooyackers, R.; Sioncke, S.; Soree, B.; Sun, X.; Vandooren, A.; Verhulst, A. S.; Vincent, B.; Waldron, N.; Wang, G.; Wang, W. E.; Witters, L.] IMEC, B-3001 Louvain, Belgium.-
item.fulltextNo Fulltext-
item.contributorHeyns, M.-
item.contributorAlian, A.-
item.contributorBRAMMERTZ, Guy-
item.contributorCaymax, M.-
item.contributorChang, Y. C.-
item.contributorChu, L. K.-
item.contributorDe Jaeger, B.-
item.contributorEneman, G.-
item.contributorGencarelli, F.-
item.contributorGroeseneken, G.-
item.contributorHellings, G.-
item.contributorHikavyy, A.-
item.contributorHoffmann, T. Y.-
item.contributorHoussa, M.-
item.contributorHuyghebaert, C.-
item.contributorLeonelli, D.-
item.contributorLin, D.-
item.contributorLoo, R.-
item.contributorMagnus, W.-
item.contributorMerckling, C.-
item.contributorMEURIS, Marc-
item.contributorMitard, J.-
item.contributorNyns, L.-
item.contributorOrzali, T.-
item.contributorRooyackers, R.-
item.contributorSioncke, S.-
item.contributorSoree, B.-
item.contributorSun, X.-
item.contributorVandooren, A.-
item.contributorVerhulst, A. S.-
item.contributorVincent, B.-
item.contributorWaldron, N.-
item.contributorWang, G.-
item.contributorWang, W. E.-
item.contributorWitters, L.-
item.fullcitationHeyns, M.; Alian, A.; BRAMMERTZ, Guy; Caymax, M.; Chang, Y. C.; Chu, L. K.; De Jaeger, B.; Eneman, G.; Gencarelli, F.; Groeseneken, G.; Hellings, G.; Hikavyy, A.; Hoffmann, T. Y.; Houssa, M.; Huyghebaert, C.; Leonelli, D.; Lin, D.; Loo, R.; Magnus, W.; Merckling, C.; MEURIS, Marc; Mitard, J.; Nyns, L.; Orzali, T.; Rooyackers, R.; Sioncke, S.; Soree, B.; Sun, X.; Vandooren, A.; Verhulst, A. S.; Vincent, B.; Waldron, N.; Wang, G.; Wang, W. E. & Witters, L. (2011) Advancing CMOS beyond the Si roadmap with Ge and III/V devices. In: 2011 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), IEEE,.-
item.accessRightsClosed Access-
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