Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/31635
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dc.contributor.authorBRAMMERTZ, Guy-
dc.contributor.authorHeyns, Marc-
dc.contributor.authorMEURIS, Marc-
dc.contributor.authorCaymax, Matty-
dc.contributor.authorJiang, Dehuai-
dc.contributor.authorMols, Yves-
dc.contributor.authorDegroote, Stefan-
dc.contributor.authorLeys, Maarten-
dc.contributor.authorBorghs, Gustaaf-
dc.date.accessioned2020-08-10T13:14:20Z-
dc.date.available2020-08-10T13:14:20Z-
dc.date.issued2007-
dc.date.submitted2020-07-30T10:11:59Z-
dc.identifier.citationApplied physics letters, 90 (13) (Art N° 134102)-
dc.identifier.urihttp://hdl.handle.net/1942/31635-
dc.description.abstractThe authors have made photoluminescence intensity (PLI) measurements on thin GaAs and InGaAs films to compare the surface recombination velocity at interfaces of the materials with AlAs and native oxide. An analytical expression for the internal quantum efficiency of the PLI method for thin semiconducting films is derived. This expression is applied to measurements on specially designed multilayer structures based on GaAs and InGaAs thin films. The results show that the native oxide on an In0.15Ga0.85As film has a one order of magnitude lower surface recombination velocity than the native oxide on a GaAs film. (c) 2007 American Institute of Physics.-
dc.language.isoen-
dc.publisherAMER INST PHYSICS-
dc.rights2007 American Institute of Physics.-
dc.subject.otherATOMIC-LAYER-DEPOSITION-
dc.subject.otherFIELD-EFFECT TRANSISTOR-
dc.subject.otherAL2O3-
dc.titleSurface recombination velocity in GaAs and In0.15Ga0.85As thin films-
dc.typeJournal Contribution-
dc.identifier.issue13-
dc.identifier.volume90-
local.bibliographicCitation.jcatA1-
dc.description.notesBrammertz, G (corresponding author), Interuniv Microelectron Ctr, IMEC vzw, Kapeldreef 75, B-3001 Louvain, Belgium.-
dc.description.notesguy.brammertz@imec.be-
local.publisher.placeCIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1,-
local.publisher.placeMELVILLE, NY 11747-4501 USA-
local.type.refereedRefereed-
local.type.specifiedArticle-
local.bibliographicCitation.artnr134102-
dc.identifier.doi10.1063/1.2717533-
dc.identifier.isiWOS:000245317100122-
dc.contributor.orcidheyns, marc/0000-0002-1199-4341; Brammertz, Guy/0000-0003-1404-7339-
dc.identifier.eissn-
local.provider.typewosris-
local.uhasselt.uhpubno-
local.description.affiliationInteruniv Microelectron Ctr, IMEC vzw, B-3001 Louvain, Belgium.-
item.fulltextWith Fulltext-
item.contributorBRAMMERTZ, Guy-
item.contributorHeyns, Marc-
item.contributorMEURIS, Marc-
item.contributorCaymax, Matty-
item.contributorJiang, Dehuai-
item.contributorMols, Yves-
item.contributorDegroote, Stefan-
item.contributorLeys, Maarten-
item.contributorBorghs, Gustaaf-
item.fullcitationBRAMMERTZ, Guy; Heyns, Marc; MEURIS, Marc; Caymax, Matty; Jiang, Dehuai; Mols, Yves; Degroote, Stefan; Leys, Maarten & Borghs, Gustaaf (2007) Surface recombination velocity in GaAs and In0.15Ga0.85As thin films. In: Applied physics letters, 90 (13) (Art N° 134102).-
item.accessRightsOpen Access-
crisitem.journal.issn0003-6951-
crisitem.journal.eissn1077-3118-
Appears in Collections:Research publications
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