Please use this identifier to cite or link to this item:
http://hdl.handle.net/1942/31636
Title: | How Trace Analytical Techniques Contribute to the Research and Development of Ge and III/V Semiconductor Devices | Authors: | Hellin, David Rip, Jens Bonzom, Renaud NELIS, Daniel Sioncke, Sonja BRAMMERTZ, Guy Caymax, Matty R. MEURIS, Marc De Gendt, S. Vinckier, Chris |
Issue Date: | 2006 | Publisher: | Source: | ECS Transactions, , p. 173 -181 | Abstract: | Ge and III/V semiconductor substrates are recently being investigated as a candidate material for the replacement of Si substrates in advanced micro-electronic devices. The reintroduction of this material requires engineering of the standard IC processing steps. In this paper, we present how the trace analytical techniques of total reflection X-ray fluorescence spectrometry (TXRF) and atomic absorption spectrometry (AAS) contribute to the realization of suitable processes to realize a high quality gate stack on Ge and GaAs substrates. A conventional application for these techniques lays in contamination control on incoming wafers. Besides this, we demonstrate some more advanced applications such as the determination of dopant concentrations (As in Ge), the study of passivation processes (S on Ge) and the characterization of nanometer thin layers (Si on Ge, HfO2 on Si). copyright The Electrochemical Society. | Keywords: | X-Ray Fluorescence;X-Ray Emission Spectrometry;Grazing Incidence | Document URI: | http://hdl.handle.net/1942/31636 | DOI: | 10.1149/1.2355806 | Category: | C1 | Type: | Proceedings Paper |
Appears in Collections: | Research publications |
Show full item record
SCOPUSTM
Citations
3
checked on Sep 3, 2020
Page view(s)
48
checked on Nov 7, 2023
Google ScholarTM
Check
Altmetric
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.