Alternative Channel Materials for MOS Devices

Abstract

The introduction of high mobility channel materials together with new device structures with improved subthreshold slope provides a pathway into continuing the performance scaling of CMOS technology beyond the classical Si roadmap. The combination of Ge pMOS devices with nMOS devices made on very high electron mobility III/V compounds such as InGaAs can be achieved by selective growth on a Si-wafer. The key challenge towards achieving excellent device performance is the electrical passivation of the interface between the high-kappa dielectric and the alternative channel materials.