Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/31639
Full metadata record
DC FieldValueLanguage
dc.contributor.authorHeyns, Marc-
dc.contributor.authorAdelmann, Christoph-
dc.contributor.authorBRAMMERTZ, Guy-
dc.contributor.authorBrunco, David-
dc.contributor.authorCaymax, Matty-
dc.contributor.authorDe Jaeger, Brice-
dc.contributor.authorDelabie, Annelies-
dc.contributor.authorEneman, Geert-
dc.contributor.authorHoussa, Michel-
dc.contributor.authorLin, Dennis-
dc.contributor.authorMartens, Koen-
dc.contributor.authorMerckling, Clement-
dc.contributor.authorMEURIS, Marc-
dc.contributor.authorMittard, Jerome-
dc.contributor.authorPenaud, Julien-
dc.contributor.authorPourtois, Geoffrey-
dc.contributor.authorScarrozza, Marco-
dc.contributor.authorSimoen, Eddy-
dc.contributor.authorSioncke, Sonja-
dc.contributor.authorWang, Wei-E-
dc.date.accessioned2020-08-10T13:26:23Z-
dc.date.available2020-08-10T13:26:23Z-
dc.date.issued2009-
dc.date.submitted2020-07-30T10:02:38Z-
dc.identifier.citationULIS 2009: 10TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION OF SILICON, IEEE, p. 83 -86-
dc.identifier.isbn978-1-4244-3705-4-
dc.identifier.urihttp://hdl.handle.net/1942/31639-
dc.description.abstractThe use of Ge and III/V materials for future CMOS applications is investigated. Good passivation of the Ge surface can be obtained by either GeO2 or Si passivation. Short channel Ge pMOS devices with low EOT are fabricated using Si passivation at 350 and 500 degrees C. The passivation of III/V materials is a very challenging topic. Some critical issues and passivation schemes are discussed.-
dc.language.isoen-
dc.publisherIEEE-
dc.titleGe and III/V devices for advanced CMOS-
dc.typeProceedings Paper-
local.bibliographicCitation.conferencedateMAR 18-20, 2009-
local.bibliographicCitation.conferencename10th International Conference on Ultimate Integration on Silicon-
local.bibliographicCitation.conferenceplaceAachen, GERMANY-
dc.identifier.epage86-
dc.identifier.spage83-
local.bibliographicCitation.jcatC1-
dc.description.notesHeyns, M (corresponding author), IMEC, Kapeldreef 75, B-3001 Louvain, Belgium.-
dc.description.notesmarc.heyns@imec.be-
local.publisher.place345 E 47TH ST, NEW YORK, NY 10017 USA-
local.type.refereedRefereed-
local.type.specifiedProceedings Paper-
dc.identifier.doi10.1109/ULIS.2009.4897544-
dc.identifier.isiWOS:000266761300020-
dc.contributor.orcidMartens, Koen/0000-0001-7135-5536; Merckling,-
dc.contributor.orcidClement/0000-0003-3084-2543; houssa, michel/0000-0003-1844-3515; heyns,-
dc.contributor.orcidmarc/0000-0002-1199-4341; Brammertz, Guy/0000-0003-1404-7339; Adelmann,-
dc.contributor.orcidChristoph/0000-0002-4831-3159-
local.provider.typewosris-
local.bibliographicCitation.btitleULIS 2009: 10TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION OF SILICON-
local.uhasselt.uhpubno-
local.description.affiliation[Heyns, Marc; Adelmann, Christoph; Brammertz, Guy; Brunco, David; Caymax, Matty; De Jaeger, Brice; Delabie, Annelies; Eneman, Geert; Houssa, Michel; Lin, Dennis; Martens, Koen; Merckling, Clement; Meuris, Marc; Mittard, Jerome; Penaud, Julien; Pourtois, Geoffrey; Scarrozza, Marco; Simoen, Eddy; Sioncke, Sonja; Wang, Wei-E] IMEC, B-3001 Louvain, Belgium.-
item.fulltextNo Fulltext-
item.contributorHeyns, Marc-
item.contributorAdelmann, Christoph-
item.contributorBRAMMERTZ, Guy-
item.contributorBrunco, David-
item.contributorCaymax, Matty-
item.contributorDe Jaeger, Brice-
item.contributorDelabie, Annelies-
item.contributorEneman, Geert-
item.contributorHoussa, Michel-
item.contributorLin, Dennis-
item.contributorMartens, Koen-
item.contributorMerckling, Clement-
item.contributorMEURIS, Marc-
item.contributorMittard, Jerome-
item.contributorPenaud, Julien-
item.contributorPourtois, Geoffrey-
item.contributorScarrozza, Marco-
item.contributorSimoen, Eddy-
item.contributorSioncke, Sonja-
item.contributorWang, Wei-E-
item.fullcitationHeyns, Marc; Adelmann, Christoph; BRAMMERTZ, Guy; Brunco, David; Caymax, Matty; De Jaeger, Brice; Delabie, Annelies; Eneman, Geert; Houssa, Michel; Lin, Dennis; Martens, Koen; Merckling, Clement; MEURIS, Marc; Mittard, Jerome; Penaud, Julien; Pourtois, Geoffrey; Scarrozza, Marco; Simoen, Eddy; Sioncke, Sonja & Wang, Wei-E (2009) Ge and III/V devices for advanced CMOS. In: ULIS 2009: 10TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION OF SILICON, IEEE, p. 83 -86.-
item.accessRightsClosed Access-
Appears in Collections:Research publications
Show simple item record

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.