Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/31641
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dc.contributor.authorWang, W.-E.-
dc.contributor.authorLin, H.-C.-
dc.contributor.authorBRAMMERTZ, Guy-
dc.contributor.authorDelabie, A.-
dc.contributor.authorSioncke, S.-
dc.contributor.authorSimoen, E.-
dc.contributor.authorCaymax, M.-
dc.contributor.authorMEURIS, Marc-
dc.contributor.authorHeyns, M.-
dc.date.accessioned2020-08-11T06:33:54Z-
dc.date.available2020-08-11T06:33:54Z-
dc.date.issued2010-
dc.date.submitted2020-08-06T10:05:18Z-
dc.identifier.citationMaterials Research Society Symposium Proceedings, p. 46 -52-
dc.identifier.isbn9781617387548-
dc.identifier.issn02729172-
dc.identifier.urihttp://hdl.handle.net/1942/31641-
dc.description.abstractCatalytic-FGA, a combination of the standard forming gas anneal with a catalytic metal gate, has been applied to study the hydrogen passivation of III-V/Ge MOS systems. Pd (or Pt) metal gate catalytically dissociates molecular hydrogen into atomic hydrogen atoms, which then diffuse through the dielectric layer and neutralize certain semiconductor/dielectric interfacial defects. MOS systems with various interfacial qualities, including lattice-matched (n/p) In0.53Ga0.47As/10nm ALD-Al2O3 (or ZrO2)/Pd capacitors, an undoped Ge/∼lnm GeO2/4nm ALD-Al2O3/Pt capacitor, and an nGe/8nm ALD-Al 2O3/Pt capacitor are fabricated to evaluate the effectiveness of C-FGA. © 2010 Materials Research Society.-
dc.language.isoen-
dc.relation.ispartofseriesMRS Proceedings-
dc.rightsMaterials Research Society 2010-
dc.subject.otherAtomic hydrogen-
dc.subject.otherCatalytic metal gates-
dc.subject.otherDielectric layer-
dc.subject.otherForming gas-
dc.subject.otherHydrogen passivation-
dc.subject.otherInterfacial defect-
dc.subject.otherInterfacial qualities-
dc.subject.otherLattice-matched-
dc.subject.otherMetal gate-
dc.subject.otherMolecular hydrogen-
dc.subject.otherAluminum-
dc.subject.otherCapacitors-
dc.subject.otherDielectric materials-
dc.subject.otherHydrogen-
dc.subject.otherPalladium-
dc.subject.otherPassivation-
dc.subject.otherPlatinum-
dc.subject.otherCarrier mobility-
dc.titleCatalytic forming gas anneal on III-V/Ge MOS systems-
dc.typeProceedings Paper-
local.bibliographicCitation.conferencedate30 November 2009 - 4 December 2009-
local.bibliographicCitation.conferencename2009 MRS Fall Meeting-
local.bibliographicCitation.conferenceplaceBoston, MA; United States-
dc.identifier.epage52-
dc.identifier.spage46-
local.bibliographicCitation.jcatC1-
local.type.refereedRefereed-
local.type.specifiedProceedings Paper-
local.relation.ispartofseriesnr1194-
dc.identifier.doi10.1557/PROC-1194-A07-06-
local.provider.typeris-
local.bibliographicCitation.btitleMaterials Research Society Symposium Proceedings-
local.uhasselt.uhpubyes-
local.description.affiliationIMEC, Kapeldreef 75, 3001 Leuven, Belgium-
item.fulltextWith Fulltext-
item.contributorWang, W.-E.-
item.contributorLin, H.-C.-
item.contributorBRAMMERTZ, Guy-
item.contributorDelabie, A.-
item.contributorSioncke, S.-
item.contributorSimoen, E.-
item.contributorCaymax, M.-
item.contributorMEURIS, Marc-
item.contributorHeyns, M.-
item.fullcitationWang, W.-E.; Lin, H.-C.; BRAMMERTZ, Guy; Delabie, A.; Sioncke, S.; Simoen, E.; Caymax, M.; MEURIS, Marc & Heyns, M. (2010) Catalytic forming gas anneal on III-V/Ge MOS systems. In: Materials Research Society Symposium Proceedings, p. 46 -52.-
item.accessRightsClosed Access-
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