Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/31647
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dc.contributor.authorLin, D.-
dc.contributor.authorBRAMMERTZ, Guy-
dc.contributor.authorSioncke, S.-
dc.contributor.authorFleischmann, C.-
dc.contributor.authorDelabie, A.-
dc.contributor.authorMartens, K.-
dc.contributor.authorBender, H.-
dc.contributor.authorConard, T.-
dc.contributor.authorTseng, W. H.-
dc.contributor.authorLin, J. C.-
dc.contributor.authorWang, W. E.-
dc.contributor.authorTemst, K.-
dc.contributor.authorVantomme, A.-
dc.contributor.authorMitard, J.-
dc.contributor.authorCaymax, M.-
dc.contributor.authorMEURIS, Marc-
dc.contributor.authorHeyns, M.-
dc.contributor.authorHoffmann, T.-
dc.date.accessioned2020-08-11T06:57:28Z-
dc.date.available2020-08-11T06:57:28Z-
dc.date.issued2009-
dc.date.submitted2020-07-30T09:03:52Z-
dc.identifier.citation2009 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, IEEE, p. 300 -+-
dc.identifier.isbn978-1-4244-5639-0-
dc.identifier.urihttp://hdl.handle.net/1942/31647-
dc.description.abstractTo address the integration of the high-mobility Ge/III-V MOSFET, a common gate stack (CGS) solution is proposed for the first time and demonstrated on Ge and InGaAs channels with combined hole and electron field-effect mobility values up to 400cm(2)/eV-s and 1300cm(2)/eV-s. Based on the duality found on the InGaAs/Ge MOS system, this approach aims to integrate the InGaAs/Ge MOSFET processes for high performance CMOS applications with an emphasis on progressive EOT scaling.-
dc.language.isoen-
dc.publisherIEEE-
dc.relation.ispartofseriesInternational Electron Devices Meeting-
dc.titleEnabling the high-performance InGaAs/Ge CMOS: a common gate stack solution-
dc.typeProceedings Paper-
local.bibliographicCitation.conferencedateDEC 07-09, 2009-
local.bibliographicCitation.conferencenameIEEE International Electron Devices Meeting (IEDM 2009)-
local.bibliographicCitation.conferenceplaceBaltimore, MD-
dc.identifier.epage+-
dc.identifier.spage300-
local.bibliographicCitation.jcatC1-
dc.description.notesLin, D (corresponding author), IMEC VZW, Interuniv Microelect Ctr, Kapeldreef 75, B-3001 Louvain, Belgium.-
dc.description.notesdlin@imec.be-
local.publisher.place345 E 47TH ST, NEW YORK, NY 10017 USA-
local.type.refereedRefereed-
local.type.specifiedProceedings Paper-
dc.identifier.isiWOS:000279343900075-
dc.contributor.orcidheyns, marc/0000-0002-1199-4341; Temst, Kristiaan/0000-0002-1377-5097;-
dc.contributor.orcidMartens, Koen/0000-0001-7135-5536; Vantomme, Andre/0000-0001-9158-6534-
local.provider.typewosris-
local.bibliographicCitation.btitle2009 IEEE INTERNATIONAL ELECTRON DEVICES MEETING-
local.uhasselt.uhpubno-
local.description.affiliation[Lin, D.; Brammertz, G.; Sioncke, S.; Fleischmann, C.; Delabie, A.; Martens, K.; Bender, H.; Conard, T.; Wang, W. E.; Mitard, J.; Caymax, M.; Meuris, M.; Heyns, M.; Hoffmann, T.] IMEC VZW, Interuniv Microelect Ctr, Kapeldreef 75, B-3001 Louvain, Belgium.-
local.description.affiliation[Sioncke, S.; Temst, K.; Vantomme, A.] Katholieke Univ Leuven, Inst Voor Kern EnStralingsfysica, INPAC, B-3001 Louvain, Belgium.-
local.description.affiliation[Tseng, W. H.; Lin, J. C.] TSMC, Hsinchu, Taiwan.-
item.fulltextNo Fulltext-
item.contributorLin, D.-
item.contributorBRAMMERTZ, Guy-
item.contributorSioncke, S.-
item.contributorFleischmann, C.-
item.contributorDelabie, A.-
item.contributorMartens, K.-
item.contributorBender, H.-
item.contributorConard, T.-
item.contributorTseng, W. H.-
item.contributorLin, J. C.-
item.contributorWang, W. E.-
item.contributorTemst, K.-
item.contributorVantomme, A.-
item.contributorMitard, J.-
item.contributorCaymax, M.-
item.contributorMEURIS, Marc-
item.contributorHeyns, M.-
item.contributorHoffmann, T.-
item.fullcitationLin, D.; BRAMMERTZ, Guy; Sioncke, S.; Fleischmann, C.; Delabie, A.; Martens, K.; Bender, H.; Conard, T.; Tseng, W. H.; Lin, J. C.; Wang, W. E.; Temst, K.; Vantomme, A.; Mitard, J.; Caymax, M.; MEURIS, Marc; Heyns, M. & Hoffmann, T. (2009) Enabling the high-performance InGaAs/Ge CMOS: a common gate stack solution. In: 2009 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, IEEE, p. 300 -+.-
item.accessRightsClosed Access-
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