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http://hdl.handle.net/1942/31648
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DC Field | Value | Language |
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dc.contributor.author | Afanas'ev, V. V. | - |
dc.contributor.author | Stesmans, A. | - |
dc.contributor.author | BRAMMERTZ, Guy | - |
dc.contributor.author | Delabie, A. | - |
dc.contributor.author | Sionke, S. | - |
dc.contributor.author | O'Mahony, A. | - |
dc.contributor.author | Povey, I. M. | - |
dc.contributor.author | Pemble, M. E. | - |
dc.contributor.author | O'Connor, E. | - |
dc.contributor.author | Hurley, P. K. | - |
dc.contributor.author | Newcomb, S. B. | - |
dc.date.accessioned | 2020-08-11T07:02:51Z | - |
dc.date.available | 2020-08-11T07:02:51Z | - |
dc.date.issued | 2009 | - |
dc.date.submitted | 2020-07-30T09:07:47Z | - |
dc.identifier.citation | Applied physics letters, 94 (20) (Art N° 202110) | - |
dc.identifier.uri | http://hdl.handle.net/1942/31648 | - |
dc.description.abstract | The electron energy band alignment at interfaces of InxGa1-xAs (0 <= x <= 0.53) with atomic-layer deposited insulators Al2O3 and HfO2 is characterized using internal photoemission and photoconductivity experiments. The energy of the InxGa1-xAs valence band top is found to be only marginally influenced by the semiconductor composition. This result suggests that the known bandgap narrowing from 1.42 to 0.75 eV when the In content increases from 0 to 0.53 occurs mostly through downshift of the semiconductor conduction band bottom. It finds support from both electron and hole photoemission data. Similarly to the GaAs case, electron states originating from the interfacial oxidation of InxGa1-xAs lead to reduction in the electron barrier at the semiconductor/oxide interface. | - |
dc.description.sponsorship | KU Leuven; Fonds Wetenschappelijk Onderzoek (FWO) Vlaanderen FWO [1.5.057.07]; Tyndall National Institute; Science Foundation Ireland [07/SRC/I1172] The work done at KU Leuven was supported by the Fonds Wetenschappelijk Onderzoek FWO Vlaanderen Grant No. 1.5.057.07. The authors from the Tyndall National Institute would like to acknowledge the Science Foundation Ireland Grant No. 07/SRC/I1172 for financial support | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.rights | 2009 American Institute of Physics. | - |
dc.subject.other | alumina | - |
dc.subject.other | atomic layer deposition | - |
dc.subject.other | conduction bands | - |
dc.subject.other | energy gap | - |
dc.subject.other | gallium arsenide | - |
dc.subject.other | hafnium compounds | - |
dc.subject.other | III-V semiconductors | - |
dc.subject.other | indium compounds | - |
dc.subject.other | nanostructured materials | - |
dc.subject.other | oxidation | - |
dc.subject.other | photoconductivity | - |
dc.subject.other | photoemission | - |
dc.subject.other | semiconductor-insulator boundaries | - |
dc.subject.other | valence bands | - |
dc.subject.other | BAND OFFSETS | - |
dc.subject.other | SEMICONDUCTORS | - |
dc.title | Energy barriers at interfaces between (100) InxGa1−xAs (0≤x≤0.53) and atomic-layer deposited Al2O3 and HfO2 | - |
dc.type | Journal Contribution | - |
dc.identifier.issue | 20 | - |
dc.identifier.volume | 94 | - |
local.bibliographicCitation.jcat | A1 | - |
dc.description.notes | Afanas'ev, VV (corresponding author), Univ Louvain, Dept Phys, Celestijnenlaan 200D, B-3001 Louvain, Belgium. | - |
dc.description.notes | valeri.afanasiev@fys.kuleuven.be | - |
local.publisher.place | 1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501 USA | - |
local.type.refereed | Refereed | - |
local.type.specified | Article | - |
local.bibliographicCitation.artnr | 202110 | - |
dc.identifier.doi | 10.1063/1.3137187 | - |
dc.identifier.isi | WOS:000266342800035 | - |
dc.contributor.orcid | Povey, Ian M/0000-0002-7877-6664; Povey, Ian/0000-0002-7877-6664; | - |
dc.contributor.orcid | Afanas'ev, Valeri/0000-0001-5018-4539; Hurley, Paul/0000-0001-5137-721X; | - |
dc.contributor.orcid | Brammertz, Guy/0000-0003-1404-7339; Pemble, Martyn/0000-0002-2349-4520 | - |
dc.identifier.eissn | - | |
dc.identifier.eissn | 1077-3118 | - |
local.provider.type | wosris | - |
local.uhasselt.uhpub | no | - |
local.description.affiliation | [Afanas'ev, V. V.; Stesmans, A.] Univ Louvain, Dept Phys, B-3001 Louvain, Belgium. | - |
local.description.affiliation | [Brammertz, G.; Delabie, A.; Sionke, S.] IMEC, B-3001 Louvain, Belgium. | - |
local.description.affiliation | [O'Mahony, A.; Povey, I. M.; Pemble, M. E.; O'Connor, E.; Hurley, P. K.] Natl Univ Ireland Univ Coll Cork, Tyndall Natl Inst, Cork, Ireland. | - |
local.description.affiliation | [Newcomb, S. B.] Glebe Sci Ltd, Newport, Tipperary, Ireland. | - |
item.contributor | Afanas'ev, V. V. | - |
item.contributor | Stesmans, A. | - |
item.contributor | BRAMMERTZ, Guy | - |
item.contributor | Delabie, A. | - |
item.contributor | Sionke, S. | - |
item.contributor | O'Mahony, A. | - |
item.contributor | Povey, I. M. | - |
item.contributor | Pemble, M. E. | - |
item.contributor | O'Connor, E. | - |
item.contributor | Hurley, P. K. | - |
item.contributor | Newcomb, S. B. | - |
item.fullcitation | Afanas'ev, V. V.; Stesmans, A.; BRAMMERTZ, Guy; Delabie, A.; Sionke, S.; O'Mahony, A.; Povey, I. M.; Pemble, M. E.; O'Connor, E.; Hurley, P. K. & Newcomb, S. B. (2009) Energy barriers at interfaces between (100) InxGa1−xAs (0≤x≤0.53) and atomic-layer deposited Al2O3 and HfO2. In: Applied physics letters, 94 (20) (Art N° 202110). | - |
item.fulltext | With Fulltext | - |
item.accessRights | Open Access | - |
crisitem.journal.issn | 0003-6951 | - |
crisitem.journal.eissn | 1077-3118 | - |
Appears in Collections: | Research publications |
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1.3137187.pdf | Published version | 662.76 kB | Adobe PDF | View/Open |
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