Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/31649
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dc.contributor.authorMolle, A.-
dc.contributor.authorBRAMMERTZ, Guy-
dc.contributor.authorLamagna, L.-
dc.contributor.authorSpiga, S.-
dc.contributor.authorMEURIS, Marc-
dc.contributor.authorFanciulli, M.-
dc.date.accessioned2020-08-11T07:06:42Z-
dc.date.available2020-08-11T07:06:42Z-
dc.date.issued2010-
dc.date.submitted2020-08-06T10:01:50Z-
dc.identifier.citationMaterials Research Society Symposium Proceedings, 1194, p. 65 -73-
dc.identifier.isbn9781617387548-
dc.identifier.issn0272-9172-
dc.identifier.urihttp://hdl.handle.net/1942/31649-
dc.description.abstractLa-doped ZrO2 thin films were grown by O3based atomic layer deposition on III-V (GaAs, In0.15Ga0.85As) substrates. The direct oxide deposition and the insertion of a Ge passivation layer in between the oxide and the substrate are compared in terms of the resulting density of interface traps. An improved electrical quality of the Ge-passivated interfaces concerning the energy region close to the conduction band edge in the semiconductor band-gap is demonstrated through conductance maps at various temperatures and it is attributed to Ga-related interfacial defects. © 2010 Materials Research Society.-
dc.language.isoen-
dc.relation.ispartofseriesMRS Proceedings-
dc.rightsMaterials Research Society 2010-
dc.subject.otherAtomic layer deposited-
dc.subject.otherBand gaps-
dc.subject.otherConduction band edge-
dc.subject.otherElectrical quality-
dc.subject.otherEnergy regions-
dc.subject.otherGaAs-
dc.subject.otherInterface quality-
dc.subject.otherInterface traps-
dc.subject.otherInterfacial defect-
dc.subject.otherLa-doped-
dc.subject.otherOxide deposition-
dc.subject.otherPassivation layer-
dc.subject.otherAtomic layer deposition-
dc.subject.otherElectron mobility-
dc.subject.otherGermanium-
dc.subject.otherPassivation-
dc.subject.otherSubstrates-
dc.titleInterface quality of atomic layer deposited La-doped ZrO2 films on gepassivated In0.15Ga0.85As substrates-
dc.typeProceedings Paper-
local.bibliographicCitation.conferencedate30 November - 4 December 2009-
local.bibliographicCitation.conferencename2009 MRS Fall Meeting-
local.bibliographicCitation.conferenceplaceBoston, MA; United States-
dc.identifier.epage73-
dc.identifier.spage65-
local.bibliographicCitation.jcatC1-
local.type.refereedRefereed-
local.type.specifiedProceedings Paper-
local.relation.ispartofseriesnr1194-
dc.identifier.doi10.1557/PROC-1194-A08-10-
local.provider.typeris-
local.bibliographicCitation.btitleMaterials Research Society Symposium Proceedings, 1194-
local.uhasselt.uhpubyes-
local.description.affiliationLaboratorio Nazionale MDM, CNR-INFM, via C. Olivetti 2, I-20041 Agrate Brianza (Milano), Italy-
local.description.affiliationIMEC vzw, Kapeldreef 75, B-3001, Leuven, Belgium-
local.description.affiliationDipartimento di Scienza dei Materiali, Università degli Studi di Milano Bicocca, Milano, Italy-
item.fulltextNo Fulltext-
item.contributorMolle, A.-
item.contributorBRAMMERTZ, Guy-
item.contributorLamagna, L.-
item.contributorSpiga, S.-
item.contributorMEURIS, Marc-
item.contributorFanciulli, M.-
item.fullcitationMolle, A.; BRAMMERTZ, Guy; Lamagna, L.; Spiga, S.; MEURIS, Marc & Fanciulli, M. (2010) Interface quality of atomic layer deposited La-doped ZrO2 films on gepassivated In0.15Ga0.85As substrates. In: Materials Research Society Symposium Proceedings, 1194, p. 65 -73.-
item.accessRightsClosed Access-
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