Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/31650
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dc.contributor.authorVincent, B.-
dc.contributor.authorLoo, R.-
dc.contributor.authorVandervorst, W.-
dc.contributor.authorBRAMMERTZ, Guy-
dc.contributor.authorCaymax, M.-
dc.date.accessioned2020-08-11T10:21:17Z-
dc.date.available2020-08-11T10:21:17Z-
dc.date.issued2010-
dc.date.submitted2020-08-06T08:39:30Z-
dc.identifier.citationJOURNAL OF CRYSTAL GROWTH, 312 (19) , p. 2671 -2676-
dc.identifier.urihttp://hdl.handle.net/1942/31650-
dc.description.abstractDichlorosilane (DCS), silane and trisilane have been investigated as Si precursors for low temperature ( < 700 degrees C) Si reduced pressure chemical vapor deposition. DCS and silane are limited to growth temperatures higher than 600-650 and 500 degrees C, respectively. At lower temperatures, absence of either Cl or H desorption from the surface impedes Si growth with acceptable growth rate ( > 5 angstrom/min). Trisilane permits the growth of Si at lower temperatures below 350 degrees C due to a specific growth mechanism enhancing H desorption. Layers grown at temperatures lower than 500 degrees C are defective, irrespective of the carrier gas, pressure and precursor flow used. (C) 2010 Elsevier B.V. All rights reserved.-
dc.description.sponsorshipThe authors would like to acknowledge Voltaix for providingtrisilane for imec-
dc.language.isoen-
dc.publisherELSEVIER SCIENCE BV-
dc.rights2010 Elsevier B.V. All rights reserved-
dc.subject.otherCrystal structure-
dc.subject.otherDesorption-
dc.subject.otherChemical vapor deposition processes-
dc.subject.otherSemiconducting silicon-
dc.subject.otherField effect transistors-
dc.subject.otherGROWTH-
dc.subject.otherSILICON-
dc.subject.otherFILMS-
dc.titleLow temperature Si homo-epitaxy by reduced pressure chemical vapor deposition using dichlorosilane, silane and trisilane-
dc.typeJournal Contribution-
dc.identifier.epage2676-
dc.identifier.issue19-
dc.identifier.spage2671-
dc.identifier.volume312-
local.bibliographicCitation.jcatA1-
dc.description.notesVincent, B (corresponding author), IMEC, Kapeldreef 75, B-3001 Louvain, Belgium.-
dc.description.notesbenjamin.vincent@imec.be-
local.publisher.placePO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS-
local.type.refereedRefereed-
local.type.specifiedArticle-
dc.identifier.doi10.1016/j.jcrysgro.2010.06.013-
dc.identifier.isiWOS:000282349500007-
dc.contributor.orcidLoo, Roger/0000-0003-3513-6058; Brammertz, Guy/0000-0003-1404-7339-
dc.identifier.eissn-
dc.identifier.eissn1873-5002-
local.provider.typewosris-
local.uhasselt.uhpubno-
local.description.affiliation[Vincent, B.; Loo, R.; Vandervorst, W.; Brammertz, G.; Caymax, M.] IMEC, B-3001 Louvain, Belgium.-
local.description.affiliation[Vandervorst, W.] Katholieke Univ Leuven, ESAT INSYS, B-3001 Louvain, Belgium.-
item.accessRightsRestricted Access-
item.fulltextWith Fulltext-
item.contributorVincent, B.-
item.contributorLoo, R.-
item.contributorVandervorst, W.-
item.contributorBRAMMERTZ, Guy-
item.contributorCaymax, M.-
item.fullcitationVincent, B.; Loo, R.; Vandervorst, W.; BRAMMERTZ, Guy & Caymax, M. (2010) Low temperature Si homo-epitaxy by reduced pressure chemical vapor deposition using dichlorosilane, silane and trisilane. In: JOURNAL OF CRYSTAL GROWTH, 312 (19) , p. 2671 -2676.-
crisitem.journal.issn0022-0248-
crisitem.journal.eissn1873-5002-
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