Please use this identifier to cite or link to this item:
http://hdl.handle.net/1942/31651
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cantoro, M. | - |
dc.contributor.author | BRAMMERTZ, Guy | - |
dc.contributor.author | Richard, O. | - |
dc.contributor.author | Bender, H. | - |
dc.contributor.author | Clemente, F. | - |
dc.contributor.author | Leys, M. | - |
dc.contributor.author | Degroote, S. | - |
dc.contributor.author | Caymax, M. | - |
dc.contributor.author | Heyns, M. | - |
dc.contributor.author | De Gendt, S. | - |
dc.date.accessioned | 2020-08-11T10:23:37Z | - |
dc.date.available | 2020-08-11T10:23:37Z | - |
dc.date.issued | 2009 | - |
dc.date.submitted | 2020-07-30T08:52:44Z | - |
dc.identifier.citation | GRAPHENE AND EMERGING MATERIALS FOR POST-CMOS APPLICATIONS, ELECTROCHEMICAL SOC INC, p. 309 -329 | - |
dc.identifier.isbn | 978-1-56677-713-1 | - |
dc.identifier.issn | 1938-5862 | - |
dc.identifier.uri | http://hdl.handle.net/1942/31651 | - |
dc.description.abstract | We report on the growth of surface-bound, vertically oriented I-D III/V nanostructures, specifically GaAs and InAs nanowires, on lattice-matched and -mismatched substrates by selective-area vapour phase epitaxy. Control of nanowire features and growth directions is achieved by tuning of the growth conditions. Grown nanostructures are characterised by scanning and transmission electron microscopy, X-ray diffraction and Raman spectroscopy. | - |
dc.language.iso | en | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.relation.ispartofseries | ECS Transactions | - |
dc.subject.other | OPTICAL-PROPERTIES | - |
dc.subject.other | TWINNING SUPERLATTICES | - |
dc.subject.other | SILICON NANOWIRES | - |
dc.subject.other | INDIUM ARSENIDE | - |
dc.subject.other | SEMICONDUCTOR | - |
dc.subject.other | GAAS | - |
dc.subject.other | MECHANISM | - |
dc.subject.other | PHOTONICS | - |
dc.subject.other | GOLD | - |
dc.subject.other | GAN | - |
dc.title | Controlled III/V Nanowire Growth by Selective-Area Vapour Phase Epitaxy | - |
dc.type | Proceedings Paper | - |
dc.relation.edition | 5 | - |
local.bibliographicCitation.conferencedate | MAY 25-29, 2009 | - |
local.bibliographicCitation.conferencename | 1st International Symposium on Emerging Materials for Post-CMOS Applications held at the 215th Meeting of the Electrochemical-Society | - |
local.bibliographicCitation.conferenceplace | San Francisco, CA | - |
dc.identifier.epage | 329 | - |
dc.identifier.spage | 309 | - |
local.bibliographicCitation.jcat | C1 | - |
dc.description.notes | Cantoro, M (corresponding author), IMEC VZW, Interuniv Microelect Ctr, Kapeldreef 75, B-3001 Louvain, Belgium. | - |
dc.description.notes | cantoro@imec.be | - |
local.publisher.place | 65 S MAIN ST, PENNINGTON, NJ 08534-2839 USA | - |
local.type.refereed | Refereed | - |
local.type.specified | Proceedings Paper | - |
local.relation.ispartofseriesnr | 19 | - |
dc.identifier.doi | 10.1149/1.3119555 | - |
dc.identifier.isi | WOS:000272592300034 | - |
dc.contributor.orcid | heyns, marc/0000-0002-1199-4341; Brammertz, Guy/0000-0003-1404-7339 | - |
dc.identifier.eissn | 1938-6737 | - |
local.provider.type | wosris | - |
local.bibliographicCitation.btitle | GRAPHENE AND EMERGING MATERIALS FOR POST-CMOS APPLICATIONS | - |
local.uhasselt.uhpub | no | - |
local.description.affiliation | [Cantoro, M.; Brammertz, G.; Richard, O.; Bender, H.; Clemente, F.; Leys, M.; Degroote, S.; Caymax, M.; Heyns, M.; De Gendt, S.] IMEC VZW, Interuniv Microelect Ctr, B-3001 Louvain, Belgium. | - |
item.contributor | Cantoro, M. | - |
item.contributor | BRAMMERTZ, Guy | - |
item.contributor | Richard, O. | - |
item.contributor | Bender, H. | - |
item.contributor | Clemente, F. | - |
item.contributor | Leys, M. | - |
item.contributor | Degroote, S. | - |
item.contributor | Caymax, M. | - |
item.contributor | Heyns, M. | - |
item.contributor | De Gendt, S. | - |
item.fullcitation | Cantoro, M.; BRAMMERTZ, Guy; Richard, O.; Bender, H.; Clemente, F.; Leys, M.; Degroote, S.; Caymax, M.; Heyns, M. & De Gendt, S. (2009) Controlled III/V Nanowire Growth by Selective-Area Vapour Phase Epitaxy. In: GRAPHENE AND EMERGING MATERIALS FOR POST-CMOS APPLICATIONS, ELECTROCHEMICAL SOC INC, p. 309 -329. | - |
item.fulltext | No Fulltext | - |
item.accessRights | Closed Access | - |
Appears in Collections: | Research publications |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.