Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/31651
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dc.contributor.authorCantoro, M.-
dc.contributor.authorBRAMMERTZ, Guy-
dc.contributor.authorRichard, O.-
dc.contributor.authorBender, H.-
dc.contributor.authorClemente, F.-
dc.contributor.authorLeys, M.-
dc.contributor.authorDegroote, S.-
dc.contributor.authorCaymax, M.-
dc.contributor.authorHeyns, M.-
dc.contributor.authorDe Gendt, S.-
dc.date.accessioned2020-08-11T10:23:37Z-
dc.date.available2020-08-11T10:23:37Z-
dc.date.issued2009-
dc.date.submitted2020-07-30T08:52:44Z-
dc.identifier.citationGRAPHENE AND EMERGING MATERIALS FOR POST-CMOS APPLICATIONS, ELECTROCHEMICAL SOC INC, p. 309 -329-
dc.identifier.isbn978-1-56677-713-1-
dc.identifier.issn1938-5862-
dc.identifier.urihttp://hdl.handle.net/1942/31651-
dc.description.abstractWe report on the growth of surface-bound, vertically oriented I-D III/V nanostructures, specifically GaAs and InAs nanowires, on lattice-matched and -mismatched substrates by selective-area vapour phase epitaxy. Control of nanowire features and growth directions is achieved by tuning of the growth conditions. Grown nanostructures are characterised by scanning and transmission electron microscopy, X-ray diffraction and Raman spectroscopy.-
dc.language.isoen-
dc.publisherELECTROCHEMICAL SOC INC-
dc.relation.ispartofseriesECS Transactions-
dc.subject.otherOPTICAL-PROPERTIES-
dc.subject.otherTWINNING SUPERLATTICES-
dc.subject.otherSILICON NANOWIRES-
dc.subject.otherINDIUM ARSENIDE-
dc.subject.otherSEMICONDUCTOR-
dc.subject.otherGAAS-
dc.subject.otherMECHANISM-
dc.subject.otherPHOTONICS-
dc.subject.otherGOLD-
dc.subject.otherGAN-
dc.titleControlled III/V Nanowire Growth by Selective-Area Vapour Phase Epitaxy-
dc.typeProceedings Paper-
dc.relation.edition5-
local.bibliographicCitation.conferencedateMAY 25-29, 2009-
local.bibliographicCitation.conferencename1st International Symposium on Emerging Materials for Post-CMOS Applications held at the 215th Meeting of the Electrochemical-Society-
local.bibliographicCitation.conferenceplaceSan Francisco, CA-
dc.identifier.epage329-
dc.identifier.spage309-
local.bibliographicCitation.jcatC1-
dc.description.notesCantoro, M (corresponding author), IMEC VZW, Interuniv Microelect Ctr, Kapeldreef 75, B-3001 Louvain, Belgium.-
dc.description.notescantoro@imec.be-
local.publisher.place65 S MAIN ST, PENNINGTON, NJ 08534-2839 USA-
local.type.refereedRefereed-
local.type.specifiedProceedings Paper-
local.relation.ispartofseriesnr19-
dc.identifier.doi10.1149/1.3119555-
dc.identifier.isiWOS:000272592300034-
dc.contributor.orcidheyns, marc/0000-0002-1199-4341; Brammertz, Guy/0000-0003-1404-7339-
dc.identifier.eissn1938-6737-
local.provider.typewosris-
local.bibliographicCitation.btitleGRAPHENE AND EMERGING MATERIALS FOR POST-CMOS APPLICATIONS-
local.uhasselt.uhpubno-
local.description.affiliation[Cantoro, M.; Brammertz, G.; Richard, O.; Bender, H.; Clemente, F.; Leys, M.; Degroote, S.; Caymax, M.; Heyns, M.; De Gendt, S.] IMEC VZW, Interuniv Microelect Ctr, B-3001 Louvain, Belgium.-
item.contributorCantoro, M.-
item.contributorBRAMMERTZ, Guy-
item.contributorRichard, O.-
item.contributorBender, H.-
item.contributorClemente, F.-
item.contributorLeys, M.-
item.contributorDegroote, S.-
item.contributorCaymax, M.-
item.contributorHeyns, M.-
item.contributorDe Gendt, S.-
item.fullcitationCantoro, M.; BRAMMERTZ, Guy; Richard, O.; Bender, H.; Clemente, F.; Leys, M.; Degroote, S.; Caymax, M.; Heyns, M. & De Gendt, S. (2009) Controlled III/V Nanowire Growth by Selective-Area Vapour Phase Epitaxy. In: GRAPHENE AND EMERGING MATERIALS FOR POST-CMOS APPLICATIONS, ELECTROCHEMICAL SOC INC, p. 309 -329.-
item.fulltextNo Fulltext-
item.accessRightsClosed Access-
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