Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/31651
Full metadata record
DC FieldValueLanguage
dc.contributor.authorCantoro, M.-
dc.contributor.authorBRAMMERTZ, Guy-
dc.contributor.authorRichard, O.-
dc.contributor.authorBender, H.-
dc.contributor.authorClemente, F.-
dc.contributor.authorLeys, M.-
dc.contributor.authorDegroote, S.-
dc.contributor.authorCaymax, M.-
dc.contributor.authorHeyns, M.-
dc.contributor.authorDe Gendt, S.-
dc.date.accessioned2020-08-11T10:23:37Z-
dc.date.available2020-08-11T10:23:37Z-
dc.date.issued2009-
dc.date.submitted2020-07-30T08:52:44Z-
dc.identifier.citationGRAPHENE AND EMERGING MATERIALS FOR POST-CMOS APPLICATIONS, ELECTROCHEMICAL SOC INC, p. 309 -329-
dc.identifier.isbn978-1-56677-713-1-
dc.identifier.issn1938-5862-
dc.identifier.urihttp://hdl.handle.net/1942/31651-
dc.description.abstractWe report on the growth of surface-bound, vertically oriented I-D III/V nanostructures, specifically GaAs and InAs nanowires, on lattice-matched and -mismatched substrates by selective-area vapour phase epitaxy. Control of nanowire features and growth directions is achieved by tuning of the growth conditions. Grown nanostructures are characterised by scanning and transmission electron microscopy, X-ray diffraction and Raman spectroscopy.-
dc.language.isoen-
dc.publisherELECTROCHEMICAL SOC INC-
dc.relation.ispartofseriesECS Transactions-
dc.subject.otherOPTICAL-PROPERTIES-
dc.subject.otherTWINNING SUPERLATTICES-
dc.subject.otherSILICON NANOWIRES-
dc.subject.otherINDIUM ARSENIDE-
dc.subject.otherSEMICONDUCTOR-
dc.subject.otherGAAS-
dc.subject.otherMECHANISM-
dc.subject.otherPHOTONICS-
dc.subject.otherGOLD-
dc.subject.otherGAN-
dc.titleControlled III/V Nanowire Growth by Selective-Area Vapour Phase Epitaxy-
dc.typeProceedings Paper-
dc.relation.edition5-
local.bibliographicCitation.conferencedateMAY 25-29, 2009-
local.bibliographicCitation.conferencename1st International Symposium on Emerging Materials for Post-CMOS Applications held at the 215th Meeting of the Electrochemical-Society-
local.bibliographicCitation.conferenceplaceSan Francisco, CA-
dc.identifier.epage329-
dc.identifier.spage309-
local.bibliographicCitation.jcatC1-
dc.description.notesCantoro, M (corresponding author), IMEC VZW, Interuniv Microelect Ctr, Kapeldreef 75, B-3001 Louvain, Belgium.-
dc.description.notescantoro@imec.be-
local.publisher.place65 S MAIN ST, PENNINGTON, NJ 08534-2839 USA-
local.type.refereedRefereed-
local.type.specifiedProceedings Paper-
local.relation.ispartofseriesnr19-
dc.identifier.doi10.1149/1.3119555-
dc.identifier.isiWOS:000272592300034-
dc.contributor.orcidheyns, marc/0000-0002-1199-4341; Brammertz, Guy/0000-0003-1404-7339-
dc.identifier.eissn1938-6737-
local.provider.typewosris-
local.bibliographicCitation.btitleGRAPHENE AND EMERGING MATERIALS FOR POST-CMOS APPLICATIONS-
local.uhasselt.uhpubno-
local.description.affiliation[Cantoro, M.; Brammertz, G.; Richard, O.; Bender, H.; Clemente, F.; Leys, M.; Degroote, S.; Caymax, M.; Heyns, M.; De Gendt, S.] IMEC VZW, Interuniv Microelect Ctr, B-3001 Louvain, Belgium.-
item.fulltextNo Fulltext-
item.accessRightsClosed Access-
item.fullcitationCantoro, M.; BRAMMERTZ, Guy; Richard, O.; Bender, H.; Clemente, F.; Leys, M.; Degroote, S.; Caymax, M.; Heyns, M. & De Gendt, S. (2009) Controlled III/V Nanowire Growth by Selective-Area Vapour Phase Epitaxy. In: GRAPHENE AND EMERGING MATERIALS FOR POST-CMOS APPLICATIONS, ELECTROCHEMICAL SOC INC, p. 309 -329.-
item.contributorCantoro, M.-
item.contributorBRAMMERTZ, Guy-
item.contributorRichard, O.-
item.contributorBender, H.-
item.contributorClemente, F.-
item.contributorLeys, M.-
item.contributorDegroote, S.-
item.contributorCaymax, M.-
item.contributorHeyns, M.-
item.contributorDe Gendt, S.-
Appears in Collections:Research publications
Show simple item record

SCOPUSTM   
Citations

3
checked on Sep 5, 2020

WEB OF SCIENCETM
Citations

4
checked on Sep 27, 2024

Page view(s)

34
checked on Oct 30, 2023

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.