Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/31653
Full metadata record
DC FieldValueLanguage
dc.contributor.authorAfanas'ev, V. V.-
dc.contributor.authorBadylevich, M.-
dc.contributor.authorStesmans, A.-
dc.contributor.authorBRAMMERTZ, Guy-
dc.contributor.authorDelabie, A.-
dc.contributor.authorSionke, S.-
dc.contributor.authorO'Mahony, A.-
dc.contributor.authorPovey, I. M.-
dc.contributor.authorPemble, M. E.-
dc.contributor.authorO'Connor, E.-
dc.contributor.authorHurley, P. K.-
dc.contributor.authorNewcomb, S. B.-
dc.date.accessioned2020-08-11T12:22:42Z-
dc.date.available2020-08-11T12:22:42Z-
dc.date.issued2008-
dc.date.submitted2020-07-30T08:37:02Z-
dc.identifier.citationApplied physics letters, 93 (21) (Art N° 212104)-
dc.identifier.urihttp://hdl.handle.net/1942/31653-
dc.description.abstractBand alignment at the interfaces of (100)GaAs with Al2O3 and HfO2 grown using atomic layer deposition is determined using internal photoemission and photoconductivity measurements. Though the inferred conduction and valence band offsets for both insulators were found to be close to or larger than 2 eV, the interlayer grown by concomitant oxidation of GaAs reduces the barrier for electrons by approximately 1 eV. The latter may pose significant problems associated with electron injection from GaAs into the oxide.-
dc.description.sponsorshipKU Leuven [1.5.057.07]-
dc.language.isoen-
dc.publisherAMER INST PHYSICS-
dc.rights2008 American Institute of Physics.-
dc.subject.otheralumina-
dc.subject.otheratomic layer deposition-
dc.subject.othercharge injection-
dc.subject.othergallium arsenide-
dc.subject.otherhafnium compounds-
dc.subject.otherhigh-k dielectric thin films-
dc.subject.otherIII-V semiconductors-
dc.subject.otheroxidation-
dc.subject.otherphotoconductivity-
dc.subject.otherphotoemission-
dc.subject.othersemiconductor-insulator boundaries-
dc.titleEnergy barriers at interfaces of (100)GaAs with atomic layer deposited Al2O3 and HfO2-
dc.typeJournal Contribution-
dc.identifier.issue21-
dc.identifier.volume93-
local.bibliographicCitation.jcatA1-
dc.description.notesAfanas'ev, VV (corresponding author), Univ Louvain, Dept Phys, Celestijnenlaan 200D, B-3001 Louvain, Belgium.-
dc.description.notesvaleri.afanasiev@fys.kuleuven.be-
local.publisher.place1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501 USA-
local.type.refereedRefereed-
local.type.specifiedArticle-
local.bibliographicCitation.artnr212104-
dc.identifier.doi10.1063/1.3021374-
dc.identifier.isiWOS:000261212800017-
dc.contributor.orcidPovey, Ian M/0000-0002-7877-6664; Povey, Ian/0000-0002-7877-6664;-
dc.contributor.orcidAfanas'ev, Valeri/0000-0001-5018-4539; Hurley, Paul/0000-0001-5137-721X;-
dc.contributor.orcidPemble, Martyn/0000-0002-2349-4520; Brammertz, Guy/0000-0003-1404-7339-
dc.identifier.eissn-
dc.identifier.eissn1077-3118-
local.provider.typewosris-
local.uhasselt.uhpubno-
local.description.affiliation[Afanas'ev, V. V.; Badylevich, M.; Stesmans, A.] Univ Louvain, Dept Phys, B-3001 Louvain, Belgium.-
local.description.affiliation[Brammertz, G.; Delabie, A.; Sionke, S.] IMEC, B-3001 Louvain, Belgium.-
local.description.affiliation[O'Mahony, A.; Povey, I. M.; Pemble, M. E.; O'Connor, E.; Hurley, P. K.] Univ Coll Cork, Tyndall Natl Inst, Cork, Ireland.-
local.description.affiliation[Newcomb, S. B.] Glebe Sci Ltd, Newport, Tipperary, Ireland.-
item.fulltextNo Fulltext-
item.contributorAfanas'ev, V. V.-
item.contributorBadylevich, M.-
item.contributorStesmans, A.-
item.contributorBRAMMERTZ, Guy-
item.contributorDelabie, A.-
item.contributorSionke, S.-
item.contributorO'Mahony, A.-
item.contributorPovey, I. M.-
item.contributorPemble, M. E.-
item.contributorO'Connor, E.-
item.contributorHurley, P. K.-
item.contributorNewcomb, S. B.-
item.fullcitationAfanas'ev, V. V.; Badylevich, M.; Stesmans, A.; BRAMMERTZ, Guy; Delabie, A.; Sionke, S.; O'Mahony, A.; Povey, I. M.; Pemble, M. E.; O'Connor, E.; Hurley, P. K. & Newcomb, S. B. (2008) Energy barriers at interfaces of (100)GaAs with atomic layer deposited Al2O3 and HfO2. In: Applied physics letters, 93 (21) (Art N° 212104).-
item.accessRightsClosed Access-
crisitem.journal.issn0003-6951-
crisitem.journal.eissn1077-3118-
Appears in Collections:Research publications
Show simple item record

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.