Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/31657
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dc.contributor.authorBRAMMERTZ, Guy-
dc.contributor.authorHeyns, M.-
dc.contributor.authorMEURIS, Marc-
dc.contributor.authorCaymax, M.-
dc.contributor.authorJiang, D.-
dc.date.accessioned2020-08-11T12:38:47Z-
dc.date.available2020-08-11T12:38:47Z-
dc.date.issued2007-
dc.date.submitted2020-07-30T08:59:01Z-
dc.identifier.citationMicroelectronic engineering, 84 (9-10) , p. 2154 -2157-
dc.identifier.urihttp://hdl.handle.net/1942/31657-
dc.description.abstractPhotoluminescence intensity (PLI) measurements of GaAs and InGaAs thin films indicate that InGaAs might be inherently easier to passivate than GaAs. The introduction of just 15% of In leads to a reduction of the surface recombination velocity at native oxide interfaces by an order of magnitude. This is more than the effect expected by a reduced bandgap alone. The PLI method applied to thin films can also be used to determine the surface recombination velocity of other IIIV-oxide interfaces.-
dc.language.isoen-
dc.publisherELSEVIER SCIENCE BV-
dc.rights2007 Elsevier B.V. All rights reserved.-
dc.subject.otherphotoluminescence-
dc.subject.otherGaAs-
dc.subject.otherInGaAs-
dc.subject.othersurface recombination velocity-
dc.subject.otherATOMIC-LAYER DEPOSITION-
dc.subject.otherFIELD-EFFECT TRANSISTOR-
dc.titleComparing GaAs and In0.15Ga0.85As as channel material for alternative substrate CMOS-
dc.typeJournal Contribution-
local.bibliographicCitation.conferencedateJUN 20-23, 2007-
local.bibliographicCitation.conferencename15th Biennial Conference on Insulating Films on Semiconductors-
local.bibliographicCitation.conferenceplaceGlyfada Athens, GREECE-
dc.identifier.epage2157-
dc.identifier.issue9-10-
dc.identifier.spage2154-
dc.identifier.volume84-
local.format.pages3-
local.bibliographicCitation.jcatA1-
dc.description.notesBrammertz, G (corresponding author), IMEC VZW, Interuniv Microelect Ctr, Kapeldreef 75, B-3001 Louvain, Belgium.-
dc.description.notesGuy.Brammertz@imec.be-
local.publisher.placePO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS-
local.type.refereedRefereed-
local.type.specifiedArticle-
dc.identifier.doi10.1016/j.mee.2007.04.021-
dc.identifier.isiWOS:000247378600074-
dc.contributor.orcidheyns, marc/0000-0002-1199-4341; Brammertz, Guy/0000-0003-1404-7339-
dc.identifier.eissn-
local.provider.typewosris-
local.uhasselt.uhpubno-
local.description.affiliationIMEC VZW, Interuniv Microelect Ctr, B-3001 Louvain, Belgium.-
local.description.affiliationKatholieke Univ Leuven, ESAT INSYS, Dept Elect Engn, B-3001 Heverlee, Belgium.-
item.fulltextWith Fulltext-
item.contributorBRAMMERTZ, Guy-
item.contributorHeyns, M.-
item.contributorMEURIS, Marc-
item.contributorCaymax, M.-
item.contributorJiang, D.-
item.fullcitationBRAMMERTZ, Guy; Heyns, M.; MEURIS, Marc; Caymax, M. & Jiang, D. (2007) Comparing GaAs and In0.15Ga0.85As as channel material for alternative substrate CMOS. In: Microelectronic engineering, 84 (9-10) , p. 2154 -2157.-
item.accessRightsRestricted Access-
crisitem.journal.issn0167-9317-
crisitem.journal.eissn1873-5568-
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