Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/31661
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dc.contributor.authorBRAMMERTZ, Guy-
dc.contributor.authorCaymax, M.-
dc.contributor.authorMEURIS, Marc-
dc.contributor.authorHeyns, M.-
dc.contributor.authorMols, Y.-
dc.contributor.authorDegroote, S.-
dc.contributor.authorLeys, M.-
dc.date.accessioned2020-08-11T13:18:07Z-
dc.date.available2020-08-11T13:18:07Z-
dc.date.issued2008-
dc.date.submitted2020-07-30T09:01:07Z-
dc.identifier.citationThin solid films (Print), 517 (1) , p. 148 -151-
dc.identifier.urihttp://hdl.handle.net/1942/31661-
dc.description.abstractSelective epitaxial growth of GaAs on Ge is a prerequisite for the integration of GaAs and Ge in the sub-22 nm CMOS nodes. The problems encountered for epitaxial growth of GaAs on Ge are described and illustrated. Mainly the problem of anti-phase boundary (APB) formation is addressed. Selective epitaxial growth of GaAs on Ge with a SiO(2) mask is discussed and selectively grown layers are characterized by X-ray diffraction, electron microscopy, defect etching and photoluminescence spectroscopy. An optimized growth procedure is presented, which simultaneously reduces loading effects and APB creation. Low temperature photoluminescence measurements show the good quality of the selectively grown GaAs on Ge. (C) 2008 Elsevier B.V. All rights reserved.-
dc.description.sponsorshipUMICORE is acknowledged for providing high quality Ge substrates.-
dc.language.isoen-
dc.publisherELSEVIER SCIENCE SA-
dc.rights008 Elsevier B.V. All rights reserved.-
dc.subject.otherGaAs-
dc.subject.otherGe-
dc.subject.otherEpitaxy-
dc.subject.otherSelective epitaxy-
dc.subject.otherMOLECULAR-BEAM EPITAXY-
dc.subject.otherGROWTH-
dc.titleGaAs on Ge for CMOS-
dc.typeJournal Contribution-
dc.identifier.epage151-
dc.identifier.issue1-
dc.identifier.spage148-
dc.identifier.volume517-
local.bibliographicCitation.jcatA1-
dc.description.notesBrammertz, G (corresponding author), IMEC VZW, Interuniv Microelect Ctr, Kapeldreef 75, B-3001 Louvain, Belgium.-
dc.description.notesGuy.Brammertz@imec.be-
local.publisher.placePO BOX 564, 1001 LAUSANNE, SWITZERLAND-
local.type.refereedRefereed-
local.type.specifiedArticle-
dc.identifier.doi10.1016/j.tsf.2008.08.049-
dc.identifier.isiWOS:000261510700042-
dc.contributor.orcidheyns, marc/0000-0002-1199-4341; Brammertz, Guy/0000-0003-1404-7339-
local.provider.typewosris-
local.uhasselt.uhpubno-
local.description.affiliation[Brammertz, G.; Caymax, M.; Meuris, M.; Heyns, M.; Mols, Y.; Degroote, S.; Leys, M.] IMEC VZW, Interuniv Microelect Ctr, B-3001 Louvain, Belgium.-
item.fulltextWith Fulltext-
item.contributorBRAMMERTZ, Guy-
item.contributorCaymax, M.-
item.contributorMEURIS, Marc-
item.contributorHeyns, M.-
item.contributorMols, Y.-
item.contributorDegroote, S.-
item.contributorLeys, M.-
item.fullcitationBRAMMERTZ, Guy; Caymax, M.; MEURIS, Marc; Heyns, M.; Mols, Y.; Degroote, S. & Leys, M. (2008) GaAs on Ge for CMOS. In: Thin solid films (Print), 517 (1) , p. 148 -151.-
item.accessRightsRestricted Access-
crisitem.journal.issn0040-6090-
crisitem.journal.eissn1879-2731-
Appears in Collections:Research publications
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