Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/31664
Full metadata record
DC FieldValueLanguage
dc.contributor.authorHurley, P. K.-
dc.contributor.authorO'Connor, E.-
dc.contributor.authorMonaghan, S.-
dc.contributor.authorLong, R. D.-
dc.contributor.authorO'Mahony, A.-
dc.contributor.authorPovey, I. M.-
dc.contributor.authorCherkaoui, K.-
dc.contributor.authorMacHale, J.-
dc.contributor.authorQuinn, A. J.-
dc.contributor.authorBRAMMERTZ, Guy-
dc.contributor.authorHeyns, M.-
dc.contributor.authorNewcomb, S. B.-
dc.contributor.authorAfanas'ev, V. V.-
dc.contributor.authorSonnet, A. M.-
dc.contributor.authorGalatage, R. V.-
dc.contributor.authorJivani, M. N.-
dc.contributor.authorVogel, E. M.-
dc.contributor.authorWallace, R. M.-
dc.contributor.authorPemble, M. E.-
dc.date.accessioned2020-08-11T13:33:42Z-
dc.date.available2020-08-11T13:33:42Z-
dc.date.issued2009-
dc.date.submitted2020-07-30T09:57:40Z-
dc.identifier.citationECS Transactions (Ed.). PHYSICS AND TECHNOLOGY OF HIGH-K GATE DIELECTRICS 7, ELECTROCHEMICAL SOC INC, p. 113 -127-
dc.identifier.isbn978-1-60768-093-2-
dc.identifier.isbn978-1-56677-743-8-
dc.identifier.issn1938-5862-
dc.identifier.urihttp://hdl.handle.net/1942/31664-
dc.description.abstractIn this work results are presented of an investigation into the structural and electrical properties of HfO2 films on GaAs and InxGa1-xAs substrates for x: 0.15, 0.30, and 0.53. The capacitance-voltage responses of the GaAs and InxGa1-xAs (x: 0.15 and 0.30) are dominated by an interface defect response. Analysis of these samples at 77K indicates that the defect density is > 2.5x10(13) cm(-2). For the HfO2/In0.53Ga0.47As system, 77K capacitance-voltage responses indicate surface accumulation is achieved. The results are consistent with a high defect density, with an energy level >= 0.75 eV above the valence band in the HfO2/InxGa1-xAs system, where the defect energy with respect to the valence band, does not change with the composition of the InxGa1-xAs. The HfO2/In0.53Ga0.47As interface exhibits two defects at 0.3eV (1.7x10(13)cm(-2)eV) and 0.61eV (1.5x10(13)cm(-2)eV) above the valance band edge. The defect at 0.61eV is removed by forming gas annealing at 325 degrees C.-
dc.description.sponsorshipScience Foundation IrelandScience Foundation Ireland [05/IN/1751, 07/SRC/ I1172]; INTEL/IRCSET-
dc.language.isoen-
dc.publisherELECTROCHEMICAL SOC INC-
dc.relation.ispartofseriesECS Transactions-
dc.subject.otherCAPACITANCE-VOLTAGE CHARACTERIZATION-
dc.subject.otherTEMPERATURE-DEPENDENCE-
dc.subject.otherGATE DIELECTRICS-
dc.subject.otherMOBILITY-
dc.subject.otherGAAS-
dc.subject.otherHFO2-
dc.subject.otherINTERFACE-
dc.subject.otherSI-
dc.subject.otherEXTRACTION-
dc.subject.otherTRANSISTOR-
dc.titleStructural and Electrical Properties of HfO2/n-InxGa1-xAs structures (x: 0, 0.15, 0.3 and 0.53)-
dc.typeProceedings Paper-
local.bibliographicCitation.authorsECS Transactions-
local.bibliographicCitation.conferencedateOCT 05-07, 2009-
local.bibliographicCitation.conferencename7th International Symposium on High Dielectric Constant Materials and Gate Stacks held during the 216th Meeting of The Electrochemical-Society-
local.bibliographicCitation.conferenceplaceVienna, AUSTRIA-
dc.identifier.epage127-
dc.identifier.spage113-
local.bibliographicCitation.jcatC1-
dc.description.notesHurley, PK (corresponding author), Natl Univ Ireland Univ Coll Cork, Tyndall Natl Inst, Cork, Ireland.-
local.publisher.place65 S MAIN ST, PENNINGTON, NJ 08534-2839 USA-
local.type.refereedRefereed-
local.type.specifiedProceedings Paper-
dc.identifier.doi10.1149/1.3206612-
dc.identifier.isiWOS:000338086300011-
dc.contributor.orcidPovey, Ian M/0000-0002-7877-6664; heyns, marc/0000-0002-1199-4341;-
dc.contributor.orcidVogel, Eric M/0000-0002-6110-1361; Wallace, Robert-
dc.contributor.orcidM./0000-0001-5566-4806; Povey, Ian/0000-0002-7877-6664; Afanas'ev,-
dc.contributor.orcidValeri/0000-0001-5018-4539; Monaghan, S/0000-0002-9006-9890; Pemble,-
dc.contributor.orcidMartyn/0000-0002-2349-4520; Cherkaoui, Karim/0000-0002-7062-5570;-
dc.contributor.orcidHurley, Paul/0000-0001-5137-721X; Brammertz, Guy/0000-0003-1404-7339-
dc.identifier.eissn1938-6737-
local.provider.typewosris-
local.bibliographicCitation.btitlePHYSICS AND TECHNOLOGY OF HIGH-K GATE DIELECTRICS 7-
local.uhasselt.uhpubno-
local.description.affiliation[Hurley, P. K.; O'Connor, E.; Monaghan, S.; Long, R. D.; O'Mahony, A.; Povey, I. M.; Cherkaoui, K.; MacHale, J.; Quinn, A. J.; Pemble, M. E.] Natl Univ Ireland Univ Coll Cork, Tyndall Natl Inst, Cork, Ireland.-
local.description.affiliation[Brammertz, G.; Heyns, M.] IMEC vzw, B-30001 Leuven, Belgium.-
local.description.affiliation[Newcomb, S. B.] Glebe Scientif Ltd, Newport, Ireland.-
local.description.affiliation[Afanas'ev, V. V.] Catholic Univ Louvain, B-30001 Leuven, Belgium.-
local.description.affiliation[Newcomb, S. B.; Vogel, E. M.; Wallace, R. M.] Univ Texas Dallas, Richardson, TX 75083 USA.-
item.accessRightsClosed Access-
item.fulltextNo Fulltext-
item.contributorHurley, P. K.-
item.contributorO'Connor, E.-
item.contributorMonaghan, S.-
item.contributorLong, R. D.-
item.contributorO'Mahony, A.-
item.contributorPovey, I. M.-
item.contributorCherkaoui, K.-
item.contributorMacHale, J.-
item.contributorQuinn, A. J.-
item.contributorBRAMMERTZ, Guy-
item.contributorHeyns, M.-
item.contributorNewcomb, S. B.-
item.contributorAfanas'ev, V. V.-
item.contributorSonnet, A. M.-
item.contributorGalatage, R. V.-
item.contributorJivani, M. N.-
item.contributorVogel, E. M.-
item.contributorWallace, R. M.-
item.contributorPemble, M. E.-
item.fullcitationHurley, P. K.; O'Connor, E.; Monaghan, S.; Long, R. D.; O'Mahony, A.; Povey, I. M.; Cherkaoui, K.; MacHale, J.; Quinn, A. J.; BRAMMERTZ, Guy; Heyns, M.; Newcomb, S. B.; Afanas'ev, V. V.; Sonnet, A. M.; Galatage, R. V.; Jivani, M. N.; Vogel, E. M.; Wallace, R. M. & Pemble, M. E. (2009) Structural and Electrical Properties of HfO2/n-InxGa1-xAs structures (x: 0, 0.15, 0.3 and 0.53). In: ECS Transactions (Ed.). PHYSICS AND TECHNOLOGY OF HIGH-K GATE DIELECTRICS 7, ELECTROCHEMICAL SOC INC, p. 113 -127.-
Appears in Collections:Research publications
Show simple item record

SCOPUSTM   
Citations

26
checked on Oct 13, 2025

WEB OF SCIENCETM
Citations

24
checked on Oct 17, 2025

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.