Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/31665
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dc.contributor.authorLin, H. C.-
dc.contributor.authorBRAMMERTZ, Guy-
dc.contributor.authorMartens, Koen-
dc.contributor.authorde Valicourt, Guilhem-
dc.contributor.authorNegre, Laurent-
dc.contributor.authorWang, Wei-E-
dc.contributor.authorTsai, Wilman-
dc.contributor.authorMEURIS, Marc-
dc.contributor.authorHeyns, Marc-
dc.date.accessioned2020-08-11T13:42:01Z-
dc.date.available2020-08-11T13:42:01Z-
dc.date.issued2009-
dc.date.submitted2020-07-30T09:42:08Z-
dc.identifier.citationApplied physics letters, 94 (15) (Art N° 153508)-
dc.identifier.urihttp://hdl.handle.net/1942/31665-
dc.description.abstractAn interface characterization technique, termed the Fermi-level efficiency (FLE) method, is proposed for evaluating the passivation level of high trap density oxide-semiconductor interfaces. Based on the characteristic charge trapping time-energy relation and the conductance method, the FLE method examines the Fermi-level displacement at the oxide-semiconductor interface under applied gate bias. The obtained Fermi-level efficiencies can be used to assess the interface qualities of metal-oxide-semiconductor devices with III-V and other novel substrate materials.-
dc.language.isoen-
dc.publisherAMER INST PHYSICS-
dc.rights2009 American Institute of Physics.-
dc.subject.otherFermi level-
dc.subject.othergallium arsenide-
dc.subject.otherIII-V semiconductors-
dc.subject.otherindium compounds-
dc.subject.otherinterface states-
dc.subject.otherMOS capacitors-
dc.subject.otherpassivation-
dc.subject.otherLAYER-DEPOSITED AL2O3-
dc.titleThe Fermi-level efficiency method and its applications on high interface trap density oxide-semiconductor interfaces-
dc.typeJournal Contribution-
dc.identifier.issue15-
dc.identifier.volume94-
local.bibliographicCitation.jcatA1-
dc.description.notesLin, HC (corresponding author), IMEC, Kapeldreef 75, B-3001 Heverlee, Belgium.-
dc.description.notesdlin@imec.be-
local.publisher.placeCIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1,-
local.publisher.placeMELVILLE, NY 11747-4501 USA-
local.type.refereedRefereed-
local.type.specifiedArticle-
local.bibliographicCitation.artnr153508-
dc.identifier.doi10.1063/1.3113523-
dc.identifier.isiWOS:000265285200098-
dc.contributor.orcidMartens, Koen/0000-0001-7135-5536; heyns, marc/0000-0002-1199-4341;-
dc.contributor.orcidBrammertz, Guy/0000-0003-1404-7339-
dc.identifier.eissn-
local.provider.typewosris-
local.uhasselt.uhpubno-
local.description.affiliation[Lin, H. C.; Brammertz, Guy; Martens, Koen; Meuris, Marc; Heyns, Marc] IMEC, B-3001 Heverlee, Belgium.-
local.description.affiliation[de Valicourt, Guilhem; Negre, Laurent] Inst Natl Sci Appl, F-31077 Toulouse, France.-
local.description.affiliation[Wang, Wei-E; Tsai, Wilman] Intel Corp, Santa Clara, CA 95054 USA.-
item.fulltextWith Fulltext-
item.contributorLin, H. C.-
item.contributorBRAMMERTZ, Guy-
item.contributorMartens, Koen-
item.contributorde Valicourt, Guilhem-
item.contributorNegre, Laurent-
item.contributorWang, Wei-E-
item.contributorTsai, Wilman-
item.contributorMEURIS, Marc-
item.contributorHeyns, Marc-
item.fullcitationLin, H. C.; BRAMMERTZ, Guy; Martens, Koen; de Valicourt, Guilhem; Negre, Laurent; Wang, Wei-E; Tsai, Wilman; MEURIS, Marc & Heyns, Marc (2009) The Fermi-level efficiency method and its applications on high interface trap density oxide-semiconductor interfaces. In: Applied physics letters, 94 (15) (Art N° 153508).-
item.accessRightsRestricted Access-
crisitem.journal.issn0003-6951-
crisitem.journal.eissn1077-3118-
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