Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/31668
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dc.contributor.authorO'Connor, E.-
dc.contributor.authorMonaghan, S.-
dc.contributor.authorLong, R. D.-
dc.contributor.authorO'Mahony, A.-
dc.contributor.authorPovey, I. M.-
dc.contributor.authorCherkaoui, K.-
dc.contributor.authorPemble, M. E.-
dc.contributor.authorBRAMMERTZ, Guy-
dc.contributor.authorHeyns, M.-
dc.contributor.authorNewcomb, S. B.-
dc.contributor.authorAfanas'ev, V. V.-
dc.contributor.authorHurley, P. K.-
dc.date.accessioned2020-08-11T13:51:09Z-
dc.date.available2020-08-11T13:51:09Z-
dc.date.issued2009-
dc.date.submitted2020-07-30T10:08:28Z-
dc.identifier.citationApplied physics letters, 94 (10) (Art N° 102902)-
dc.identifier.urihttp://hdl.handle.net/1942/31668-
dc.description.abstractElectrical properties of metal-oxide-semiconductor capacitors using atomic layer deposited HfO2 on n-type GaAs or InxGa1-xAs (x=0.53, 0.30, 0.15) epitaxial layers were investigated. Capacitance-voltage (CV) measurements indicated large temperature and frequency dispersion at positive gate bias in devices using n-type GaAs and low In content (x=0.30, 0.15) InxGa1-xAs layers, which is significantly reduced for devices using In0.53Ga0.47As. For In0.53Ga0.47As devices, the CV response at negative gate bias is most likely characteristic of an interface state response and may not be indicative of true inversion. The conductance technique on Pd/HfO2/In0.53Ga0.47As/InP shows reductions in interface state densities by In0.53Ga0.47As surface passivation and forming gas annealing (325 degrees C).-
dc.description.sponsorshipThe authors thank Dan O’Connell, Tyndall National Institute, for sample processing. The authors would like to acknowledge the following for financial support of this work: Science Foundation Ireland (Grant Nos. 05/IN/1751 and 07/SRC/I1172, FORME); IRCSET; Intel Ireland.-
dc.language.isoen-
dc.publisherAMER INST PHYSICS-
dc.rights2009 American Institute of Physics.-
dc.subject.otherannealing-
dc.subject.otheratomic layer epitaxial growth-
dc.subject.othergallium arsenide-
dc.subject.otherhafnium compounds-
dc.subject.otherIII-V semiconductors-
dc.subject.otherindium compounds-
dc.subject.otherMIS structures-
dc.subject.otherMOS capacitors-
dc.subject.otherpalladium-
dc.subject.otherpassivation-
dc.subject.othersemiconductor epitaxial layers-
dc.subject.othersemiconductor growth-
dc.subject.otherSILICON-
dc.subject.otherDEVICES-
dc.titleTemperature and frequency dependent electrical characterization of HfO2/InxGa1−xAs interfaces using capacitance-voltage and conductance methods-
dc.typeJournal Contribution-
dc.identifier.issue10-
dc.identifier.volume94-
local.bibliographicCitation.jcatA1-
dc.description.notesO'Connor, E (corresponding author), Univ Coll Cork, Tyndall Natl Inst, Cork, Ireland.-
dc.description.noteseamon.oconnor@tyndall.ie-
local.publisher.placeCIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA-
local.type.refereedRefereed-
local.type.specifiedArticle-
local.bibliographicCitation.artnr102902-
dc.identifier.doi10.1063/1.3089688-
dc.identifier.isiWOS:000264280000068-
dc.contributor.orcidheyns, marc/0000-0002-1199-4341; Povey, Ian/0000-0002-7877-6664;-
dc.contributor.orcidAfanas'ev, Valeri/0000-0001-5018-4539; Monaghan, S/0000-0002-9006-9890;-
dc.contributor.orcidCherkaoui, Karim/0000-0002-7062-5570; Povey, Ian M/0000-0002-7877-6664;-
dc.contributor.orcidHurley, Paul/0000-0001-5137-721X-
dc.identifier.eissn-
local.provider.typewosris-
local.uhasselt.uhpubno-
local.description.affiliation[O'Connor, E.; Monaghan, S.; Long, R. D.; O'Mahony, A.; Povey, I. M.; Cherkaoui, K.; Pemble, M. E.; Hurley, P. K.] Univ Coll Cork, Tyndall Natl Inst, Cork, Ireland.-
local.description.affiliation[Brammertz, G.; Heyns, M.] IMEC, Interuniv Microelect Ctr, B-3001 Louvain, Belgium.-
local.description.affiliation[Newcomb, S. B.] Glebe Sci Ltd, Newport, Cty Tipperary, Ireland.-
local.description.affiliation[Afanas'ev, V. V.] Catholic Univ Louvain, B-3001 Louvain, Belgium.-
item.fulltextWith Fulltext-
item.contributorO'Connor, E.-
item.contributorMonaghan, S.-
item.contributorLong, R. D.-
item.contributorO'Mahony, A.-
item.contributorPovey, I. M.-
item.contributorCherkaoui, K.-
item.contributorPemble, M. E.-
item.contributorBRAMMERTZ, Guy-
item.contributorHeyns, M.-
item.contributorNewcomb, S. B.-
item.contributorAfanas'ev, V. V.-
item.contributorHurley, P. K.-
item.fullcitationO'Connor, E.; Monaghan, S.; Long, R. D.; O'Mahony, A.; Povey, I. M.; Cherkaoui, K.; Pemble, M. E.; BRAMMERTZ, Guy; Heyns, M.; Newcomb, S. B.; Afanas'ev, V. V. & Hurley, P. K. (2009) Temperature and frequency dependent electrical characterization of HfO2/InxGa1−xAs interfaces using capacitance-voltage and conductance methods. In: Applied physics letters, 94 (10) (Art N° 102902).-
item.accessRightsRestricted Access-
crisitem.journal.issn0003-6951-
crisitem.journal.eissn1077-3118-
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