Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/31674
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dc.contributor.authorRobert, E. V. C.-
dc.contributor.authorDE WILD, Jessica-
dc.contributor.authorColombara, D.-
dc.contributor.authorDale, P. J.-
dc.date.accessioned2020-08-12T08:28:27Z-
dc.date.available2020-08-12T08:28:27Z-
dc.date.issued2016-
dc.date.submitted2020-08-12T07:22:45Z-
dc.identifier.citationProceedings Thin Films for Solar and Energy Technology VIII, SPIE-INT SOC OPTICAL ENGINEERING, (Art N° 993607)-
dc.identifier.isbn978-1-5106-0264-9-
dc.identifier.issn0277-786X-
dc.identifier.urihttp://hdl.handle.net/1942/31674-
dc.description.abstractThin films of Cu2GeS3 are grown by annealing copper layers in GeS and S gaseous atmosphere above 460 degrees C. Below 500 degrees C the cubic polymorph is formed, having inferior optoelectronic properties compared to the monoclinic phase, formed at higher temperature. The bandgap of the cubic phase lies below that of the monoclinic phase: they are determined from absorption measurements to be 1.23 and 1.55 eV respectively. Photoluminescence measurements are performed and only the monoclinic Cu2GeS3 shows a photoluminescence signal with a peak maximum at 1.57 eV. We attribute this difference between cubic and monoclinic to the higher quasi fermi level splitting of the monoclinic phase. Wavelength dependent photoelectrochemical measurements demonstrate the Cu2GeS3 to be p-type with an apparent quantum efficiency of less than 3 % above the band gap.-
dc.language.isoen-
dc.publisherSPIE-INT SOC OPTICAL ENGINEERING-
dc.relation.ispartofseriesProceedings of SPIE-
dc.subject.otherCu2GeS3-
dc.subject.otherthin film semiconductors-
dc.subject.otherpolymorphism-
dc.subject.otherannealing-
dc.subject.othermonoclinic-
dc.subject.otherX-ray diffraction-
dc.subject.otherabsorption-
dc.titleCrystallographic and optoelectronic properties of the novel thin film absorber Cu2GeS3-
dc.typeProceedings Paper-
local.bibliographicCitation.authorsHeben, Michael J.-
local.bibliographicCitation.authorsAl-Jassim, Mowafak M.-
local.bibliographicCitation.conferencedateAUG 28-29, 2016-
local.bibliographicCitation.conferencenameConference on Thin Films for Solar and Energy Technology VIII-
local.bibliographicCitation.conferenceplaceSan Diego, CA-
local.bibliographicCitation.jcatC1-
local.publisher.place1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA-
local.type.refereedRefereed-
local.type.specifiedProceedings Paper-
local.relation.ispartofseriesnr9936-
local.bibliographicCitation.artnr993607-
dc.identifier.doi10.1117/12.2236621-
dc.identifier.isiWOS:000389776300004-
local.provider.typeCrossRef-
local.bibliographicCitation.btitleThin Films for Solar and Energy Technology VIII-
item.fulltextNo Fulltext-
item.contributorRobert, E. V. C.-
item.contributorDE WILD, Jessica-
item.contributorColombara, D.-
item.contributorDale, P. J.-
item.accessRightsClosed Access-
item.fullcitationRobert, E. V. C.; DE WILD, Jessica; Colombara, D. & Dale, P. J. (2016) Crystallographic and optoelectronic properties of the novel thin film absorber Cu2GeS3. In: Proceedings Thin Films for Solar and Energy Technology VIII, SPIE-INT SOC OPTICAL ENGINEERING, (Art N° 993607).-
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