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http://hdl.handle.net/1942/31687
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DC Field | Value | Language |
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dc.contributor.author | DE WILD, Jessica | - |
dc.contributor.author | Babbe, F | - |
dc.contributor.author | Robert, EVC | - |
dc.contributor.author | Redinger, A | - |
dc.contributor.author | Dale, PJ | - |
dc.date.accessioned | 2020-08-12T09:37:02Z | - |
dc.date.available | 2020-08-12T09:37:02Z | - |
dc.date.issued | 2018 | - |
dc.date.submitted | 2020-08-12T07:16:14Z | - |
dc.identifier.citation | IEEE Journal of Photovoltaics, 8 (1) , p. 299 -304 | - |
dc.identifier.uri | http://hdl.handle.net/1942/31687 | - |
dc.description.abstract | The p-type semiconductor Cu2SnS3 is alloyedwithAg to investigate its effect on absorber layer and solar cell properties. Ag replaces the Cu in (Cu1-xAgx)(2)SnS3 (ACTS) up to x <= 6% at 550 degrees C. Above this percentage, Ag forms secondary phases. We find a significant increase in grain size, from hundreds of nanometers to severalmicrons, and increased photoluminescence yield with increasing Ag concentration. Low-temperature photoluminescence measurements show that compensation is increased for the ACTS absorber layers, which could be beneficial for CTS, but also that the electrostatic band gap fluctuations are increased. The external quantum efficiency of the solar cells made from ACTS shows an increased carrier collection length from 320 nm for CTS to 700 nm and a thicker buffer layer. We attribute the increase in collection length to both increased depletion width (increased compensation) and diffusion length (larger grains). Overall the ACTS solar cells have a lower power conversion efficiency due to lower shunt resistance and open-circuit voltage, which are attributed to increase in pinholes, electrostatic fluctuation, and changes at the CdS/ACTS interface. | - |
dc.description.sponsorship | T. Unold is acknowledged for using the sputter machine at Helmholtz-Zentrum Berlin. The authors thank M. Melchiorre for solar cell processing. Prof. S. Siebentriet, J. Sendler, and G. Rey are acknowledged for discussion on the PL data. The LIST is acknowledged for the use of the XRD, SEM/EDX, and ion beam sputter. The authors thank the referees for their helpful feedback. | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.rights | 2017 IEEE. Personal use is permitted, but republication/redistribution requires IEEE permission. | - |
dc.subject.other | Cu(In, Ga)S-2 (CIGS)/Cu2ZnSn(S,Se)(4) (CZTS) | - |
dc.subject.other | heterojunctions | - |
dc.subject.other | photoluminescence (PL) | - |
dc.subject.other | photovoltaic cell | - |
dc.subject.other | thin films | - |
dc.title | Silver-Doped Cu2SnS3 Absorber Layers for Solar Cells Application | - |
dc.type | Journal Contribution | - |
dc.identifier.epage | 304 | - |
dc.identifier.issue | 1 | - |
dc.identifier.spage | 299 | - |
dc.identifier.volume | 8 | - |
local.bibliographicCitation.jcat | A1 | - |
local.publisher.place | 445 HOES LANE, PISCATAWAY, NJ 08855-4141 USA | - |
local.type.refereed | Refereed | - |
local.type.specified | Article | - |
dc.identifier.doi | 10.1109/JPHOTOV.2017.2764496 | - |
dc.identifier.isi | WOS:000418770300043 | - |
dc.identifier.eissn | - | |
local.provider.type | Web of Science | - |
item.fulltext | With Fulltext | - |
item.contributor | DE WILD, Jessica | - |
item.contributor | Babbe, F | - |
item.contributor | Robert, EVC | - |
item.contributor | Redinger, A | - |
item.contributor | Dale, PJ | - |
item.accessRights | Restricted Access | - |
item.fullcitation | DE WILD, Jessica; Babbe, F; Robert, EVC; Redinger, A & Dale, PJ (2018) Silver-Doped Cu2SnS3 Absorber Layers for Solar Cells Application. In: IEEE Journal of Photovoltaics, 8 (1) , p. 299 -304. | - |
crisitem.journal.issn | 2156-3381 | - |
crisitem.journal.eissn | 2156-3403 | - |
Appears in Collections: | Research publications |
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File | Description | Size | Format | |
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2017_Silver Doped Cu2SnS3 Absorber Layers for Solar Cells Application.pdf Restricted Access | Published version | 505.02 kB | Adobe PDF | View/Open Request a copy |
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