Please use this identifier to cite or link to this item:
http://hdl.handle.net/1942/31691
Title: | Synthesis, theoretical and experimental characterisation of thin film Cu2Sn1-xGexS3 ternary alloys (x=0 to 1): Homogeneous intermixing of k for Sn and Ge | Authors: | ROBERT, Erika Gunder, R DE WILD, Jessica Spindler, C Babbe, F Elanzeery, H El Adib, B Treharne, R Wirtz, L Miranda, HPC Schorr, S Dale, PJ |
Issue Date: | 2018 | Publisher: | PERGAMON-ELSEVIER SCIENCE LTD | Source: | Acta materialia, 151 , p. 125 -136 | Abstract: | Cu2Sn1-xGexS3 is a p-type semiconductor alloy currently investigated for use as an absorber layer in thin film solar cells. The aim of this study is to investigate the properties of this alloy in thin film form in order to establish relationships between group IV composition and structural, vibrational and opto-electronic properties. Seven single phase Cu2Sn1-xGexS3 films are prepared from x = 0 to 1, showing a uniform distribution of Ge and Sn laterally and in depth. The films all show a monoclinic crystal structure. The lattice parameters are extracted using Le Bail refinement and show a linear decrease with increasing Ge content. Using density-functional theory with hybrid functionals, we calculate the Raman active phonon frequencies of Cu2SnS3 and Cu2GeS3. For the alloyed compounds, we use a virtual atom approximation. The shift of the main Raman peak from x = 0 to x =1 can be explained as being half due to the change in atomic masses and half being due to the different bond strength. The bandgaps of the alloys are extracted from photoluminescence measurements and increase linearly from about 0.90 to 1.56 eV with increasing Ge. The net acceptor density of all films is around 10(18)cm(-3). These analyses have established that the alloy forms a solid solution over the entire composition range meaning that intentional band gap grading should be possible for future absorber layers. The linear variation of the unit cell parameters and the band gap with group IV content allows composition determination by scattering or optical measurements. Further research is required to reduce the doping density by two orders of magnitude in order to improve the current collection within a solar cell device structure. (C) 2018 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved. | Keywords: | Inorganic materials;Semiconductors;Thin films;Alloys | Document URI: | http://hdl.handle.net/1942/31691 | ISSN: | 1359-6454 | e-ISSN: | 1873-2453 | DOI: | 10.1016/j.actamat.2018.03.043 | ISI #: | WOS:000432760300012 | Rights: | 2018 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved. | Category: | A1 | Type: | Journal Contribution |
Appears in Collections: | Research publications |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
1-s2.0-S1359645418302416-main.pdf Restricted Access | Published version | 2.9 MB | Adobe PDF | View/Open Request a copy |
SCOPUSTM
Citations
10
checked on Sep 5, 2020
WEB OF SCIENCETM
Citations
16
checked on Sep 28, 2024
Page view(s)
34
checked on Sep 7, 2022
Download(s)
14
checked on Sep 7, 2022
Google ScholarTM
Check
Altmetric
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.