PLZT: Precursor characterization and ferroelectric properties

Abstract

PZT and PLZT precursor solutions were prepared by a sol-gel route, varying the Zr/Ti ratio and the La doping level. They were characterized by TGA coupled with FT-IR. Reactions taking place during heat treatments are discussed. Composition of PZT and PLZT thin films was measured by RES and their orientation determined by XRD. Ferroelectric capacitors with Pt electrodes were characterized by hysteresis and fatigue measurements.