Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/3206
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dc.contributor.authorWouters, DJ-
dc.contributor.authorNOUWEN, Ria-
dc.contributor.authorNorga, GJ-
dc.contributor.authorBartic, A.-
dc.contributor.authorVAN POUCKE, Lucien-
dc.contributor.authorMaes, HE-
dc.date.accessioned2007-11-27T09:30:08Z-
dc.date.available2007-11-27T09:30:08Z-
dc.date.issued1998-
dc.identifier.citationJOURNAL DE PHYSIQUE IV, 8(P9). p. 205-208-
dc.identifier.issn1155-4339-
dc.identifier.urihttp://hdl.handle.net/1942/3206-
dc.description.abstractThe switching quality of PZT thin-film ferroelectric capacitors was studied, using hysteresis and pulse switching measurements. The ferroelectric properties of epitaxial Pt/PZT/LSCO/MgO capacitors are strongly affected by the LSCO material. A strong deviation between hysteresis and pulse measurements has been observed for one type of LSCO, corresponding to a strong relaxation of (oxygen-vacancy) space charge polarization. On the other hand, polycrystalline Pt/PZT/Pt show very rectangular hysteresis loops with high P-r and pulse measurements reveal high speed switching and absence of rapid depolarization effects. These results prove the very high switching quality of Pt/PZT/Pt capacitors, required for their application as non-volatile memory elements.-
dc.language.isoen-
dc.publisherE D P SCIENCES-
dc.titleSwitching quality of thin-film PZT ferroelectric capacitors-
dc.typeJournal Contribution-
dc.identifier.epage208-
dc.identifier.issueP9-
dc.identifier.spage205-
dc.identifier.volume8-
local.format.pages4-
dc.description.notesIMEC, B-3001 Heverlee, Belgium. Limburgs Univ Ctr, B-3590 Diepenbeek, Belgium.Wouters, DJ, IMEC, Kapeldreef 75, B-3001 Heverlee, Belgium.-
local.type.refereedRefereed-
local.type.specifiedArticle-
dc.bibliographicCitation.oldjcatA1-
dc.identifier.isi000078118100039-
item.fullcitationWouters, DJ; NOUWEN, Ria; Norga, GJ; Bartic, A.; VAN POUCKE, Lucien & Maes, HE (1998) Switching quality of thin-film PZT ferroelectric capacitors. In: JOURNAL DE PHYSIQUE IV, 8(P9). p. 205-208.-
item.accessRightsClosed Access-
item.contributorWouters, DJ-
item.contributorNOUWEN, Ria-
item.contributorNorga, GJ-
item.contributorBartic, A.-
item.contributorVAN POUCKE, Lucien-
item.contributorMaes, HE-
item.fulltextNo Fulltext-
item.validationecoom 2000-
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