Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/3219
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dc.contributor.authorVAN OLMEN, Jan-
dc.contributor.authorMANCA, Jean-
dc.contributor.authorDE CEUNINCK, Ward-
dc.contributor.authorDE SCHEPPER, Luc-
dc.contributor.authorVAN OLMEN, Jan-
dc.contributor.authorD'Haeger, V-
dc.contributor.authorWitvrouw, A-
dc.contributor.authorMaex, K-
dc.date.accessioned2007-11-27T10:48:50Z-
dc.date.available2007-11-27T10:48:50Z-
dc.date.issued1998-
dc.identifier.citationMICROELECTRONICS AND RELIABILITY, 38(6-8). p. 1009-1013-
dc.identifier.issn0026-2714-
dc.identifier.urihttp://hdl.handle.net/1942/3219-
dc.description.abstractThe early stages of electromigration (EM) have been studied under realistic, i.e. low current densities (j<0.5 MA/cm(2)) using a high resolution resistance measurement technique. I,ow current densities initiate EM and discard other masking mechanisms allowing an accurate observation of the EM kinetics, revealing fundamental features such as incubation time and subsequent linear resistance increase, important for modelling and life time extrapolation purposes. Current and temperature dependences are investigated and compared with the results obtained with high current density tests. For the first time it is shown that the processes responsible for the incubation time are reversible in nature. (C) 1998 Elsevier Science Ltd. tall rights reserved.-
dc.language.isoen-
dc.publisherPERGAMON-ELSEVIER SCIENCE LTD-
dc.titleOverview of the kinetics of the early stages of electromigration under low (= realistic) current density stress-
dc.typeJournal Contribution-
dc.identifier.epage1013-
dc.identifier.issue6-8-
dc.identifier.spage1009-
dc.identifier.volume38-
local.format.pages5-
dc.description.notesLimburgs Univ Centrum, Inst Mat Res, Div Mat Phys, B-3590 Diepenbeek, Belgium. IMEC, B-3001 Heverlee, Belgium.Van Olmen, J, Limburgs Univ Centrum, Inst Mat Res, Div Mat Phys, Wetenschapspark 1, B-3590 Diepenbeek, Belgium.-
local.type.refereedRefereed-
local.type.specifiedArticle-
dc.bibliographicCitation.oldjcatA1-
dc.identifier.doi10.1016/S0026-2714(98)00101-2-
dc.identifier.isi000076454300026-
item.fulltextNo Fulltext-
item.fullcitationVAN OLMEN, Jan; MANCA, Jean; DE CEUNINCK, Ward; DE SCHEPPER, Luc; VAN OLMEN, Jan; D'Haeger, V; Witvrouw, A & Maex, K (1998) Overview of the kinetics of the early stages of electromigration under low (= realistic) current density stress. In: MICROELECTRONICS AND RELIABILITY, 38(6-8). p. 1009-1013.-
item.accessRightsClosed Access-
item.contributorVAN OLMEN, Jan-
item.contributorMANCA, Jean-
item.contributorDE CEUNINCK, Ward-
item.contributorDE SCHEPPER, Luc-
item.contributorD'Haeger, V-
item.contributorWitvrouw, A-
item.contributorMaex, K-
item.validationecoom 1999-
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