Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/3229
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dc.contributor.authorNESLADEK, Milos-
dc.contributor.authorSTALS, Lambert-
dc.contributor.authorStesmans, A-
dc.contributor.authorIakoubovskij, K-
dc.contributor.authorADRIAENSENS, Peter-
dc.date.accessioned2007-11-27T10:59:32Z-
dc.date.available2007-11-27T10:59:32Z-
dc.date.issued1998-
dc.identifier.citationAPPLIED PHYSICS LETTERS, 72(25). p. 3306-3308-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/1942/3229-
dc.description.abstractCharacteristic features in photocurrent (PC) and electron paramagnetic resonance (EPR) spectra are discussed and attributed to main defects in the gap of optical-quality chemical vapor deposited diamond. A shoulder in the PC spectra with an onset at about 2.2 eV is attributed to the single-substitutional nitrogen defect (EPR P1 resonance at g = 2.0024). A second feature in the PC spectra with an onset of about 1.3 eV is observed on "as-grown" samples with a hydrogen terminated surface. The defect level associated with this feature is hydrogen related, and this defect disappears after oxidation of the diamond sample surface. The EPR g = 2.0028, which was also suggested to be H-related, is discussed. (C) 1998 American Institute of Physics. [S0003-6951(98)01525-3].-
dc.language.isoen-
dc.publisherAMER INST PHYSICS-
dc.titleDominant defect levels in diamond thin films: A photocurrent and electron paramagnetic resonance study-
dc.typeJournal Contribution-
dc.identifier.epage3308-
dc.identifier.issue25-
dc.identifier.spage3306-
dc.identifier.volume72-
local.format.pages3-
dc.description.notesLimburgs Univ Ctr, Div Mat Phys, Mat Res Inst, B-3590 Diepenbeek, Belgium. Katholieke Univ Leuven, Lab Halfgeleiderfys, B-3001 Heverlee, Belgium. Acad Sci Czech Republ, Inst Phys, CZ-16253 Prague, Czech Republic.Nesladek, M, Limburgs Univ Ctr, Div Mat Phys, Mat Res Inst, Univ Campus,Wetenschapspk 1, B-3590 Diepenbeek, Belgium.-
local.type.refereedRefereed-
local.type.specifiedArticle-
dc.bibliographicCitation.oldjcatA1-
dc.identifier.doi10.1063/1.121632-
dc.identifier.isi000075274400022-
item.accessRightsClosed Access-
item.validationecoom 1999-
item.fulltextNo Fulltext-
item.fullcitationNESLADEK, Milos; STALS, Lambert; Stesmans, A; Iakoubovskij, K & ADRIAENSENS, Peter (1998) Dominant defect levels in diamond thin films: A photocurrent and electron paramagnetic resonance study. In: APPLIED PHYSICS LETTERS, 72(25). p. 3306-3308.-
item.contributorNESLADEK, Milos-
item.contributorSTALS, Lambert-
item.contributorStesmans, A-
item.contributorIakoubovskij, K-
item.contributorADRIAENSENS, Peter-
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