Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/3316
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dc.contributor.authorPETERSEN, Rainer-
dc.contributor.authorDE CEUNINCK, Ward-
dc.contributor.authorDE SCHEPPER, Luc-
dc.contributor.authorGregoris, G-
dc.date.accessioned2007-11-27T14:17:07Z-
dc.date.available2007-11-27T14:17:07Z-
dc.date.issued1997-
dc.identifier.citationMICROELECTRONICS AND RELIABILITY, 37(10-11). p. 1655-1658-
dc.identifier.issn0026-2714-
dc.identifier.urihttp://hdl.handle.net/1942/3316-
dc.description.abstractIn this paper, an accelerated ageing experiment on GaAs MESFET's is presented applying a novel in-situ technique on a reduced time scale. The ageing behaviour of several de parameters is monitored continuously while thermoelectrical stress is applied. As different ageing processes leave distinct fingerprints in the degradation curves, the increased measurement resolution and data density, which are typical for in-situ measurements, provide additional information compared with conventional ex-situ tests. The result of the numerical analysis of the experimental data is presented, which provide an initial basis for comparison with conventional data and lifetime prediction.-
dc.language.isoen-
dc.publisherPERGAMON-ELSEVIER SCIENCE LTD-
dc.titleIn-situ study of the degradation behaviour of GaAs MESFETs for hi-rel applications-
dc.typeJournal Contribution-
dc.identifier.epage1658-
dc.identifier.issue10-11-
dc.identifier.spage1655-
dc.identifier.volume37-
local.format.pages4-
dc.description.notesALCATEL ESPACE,F-31037 TOULOUSE,FRANCE.Petersen, R, LIMBURGS UNIV CTR,INST MAT RES,DIV MAT PHYS,UNIV CAMPUS,WETENSCHAPSPK 1,B-3590 DIEPENBEEK,BELGIUM.-
local.type.refereedRefereed-
local.type.specifiedArticle-
dc.bibliographicCitation.oldjcatA1-
dc.identifier.doi10.1016/S0026-2714(97)00132-7-
dc.identifier.isiA1997YB68300056-
item.fulltextNo Fulltext-
item.accessRightsClosed Access-
item.contributorDE CEUNINCK, Ward-
item.contributorPETERSEN, Rainer-
item.contributorDE SCHEPPER, Luc-
item.contributorGregoris, G-
item.fullcitationPETERSEN, Rainer; DE CEUNINCK, Ward; DE SCHEPPER, Luc & Gregoris, G (1997) In-situ study of the degradation behaviour of GaAs MESFETs for hi-rel applications. In: MICROELECTRONICS AND RELIABILITY, 37(10-11). p. 1655-1658.-
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