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http://hdl.handle.net/1942/3373
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DC Field | Value | Language |
---|---|---|
dc.contributor.author | COSEMANS, Patrick Peter | - |
dc.contributor.author | D'OLIESLAEGER, Marc | - |
dc.contributor.author | DE CEUNINCK, Ward | - |
dc.contributor.author | DE SCHEPPER, Luc | - |
dc.contributor.author | STALS, Lambert | - |
dc.date.accessioned | 2007-11-28T08:17:17Z | - |
dc.date.available | 2007-11-28T08:17:17Z | - |
dc.date.issued | 1996 | - |
dc.identifier.citation | MICROELECTRONICS AND RELIABILITY, 36(11-12). p. 1699-1702 | - |
dc.identifier.issn | 0026-2714 | - |
dc.identifier.uri | http://hdl.handle.net/1942/3373 | - |
dc.description.abstract | The general goal of this work is to get a better insight in the different microstructural processes taking place in blanket Al(Si)(Cu) metallisations under variable conditions. Using analytical transmission electron microscopy and secondary ion mass spectrometry stable theta-CuAl2 precipitates are found distributed inhomogeneously in the z-direction of the metallisation with a peak near the substrate side of the metallisation. Additional heating creates larger theta-CuAl2 precipitates distributed inhomogeneously in the z-direction with a peak near the surface of the metallisation as well as in the vicinity of the substrate. Copyright (C) 1996 Elsevier Science Ltd | - |
dc.language.iso | en | - |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
dc.title | Study of the microstructure of IC interconnect metallisations using analytical transmission electron microscopy and secondary ion mass spectrometry | - |
dc.type | Journal Contribution | - |
dc.identifier.epage | 1702 | - |
dc.identifier.issue | 11-12 | - |
dc.identifier.spage | 1699 | - |
dc.identifier.volume | 36 | - |
local.format.pages | 4 | - |
dc.description.notes | Cosemans, P, LIMBURGS UNIV CTR,INST MAT RES,DIV MAT PHYS,UNIV CAMPUS,WETENSCHAPSPK 1,B-3590 DIEPENBEEK,BELGIUM. | - |
local.type.refereed | Refereed | - |
local.type.specified | Article | - |
dc.bibliographicCitation.oldjcat | A1 | - |
dc.identifier.doi | 10.1016/0026-2714(96)00177-1 | - |
dc.identifier.isi | A1996VN50200022 | - |
item.fulltext | No Fulltext | - |
item.accessRights | Closed Access | - |
item.fullcitation | COSEMANS, Patrick Peter; D'OLIESLAEGER, Marc; DE CEUNINCK, Ward; DE SCHEPPER, Luc & STALS, Lambert (1996) Study of the microstructure of IC interconnect metallisations using analytical transmission electron microscopy and secondary ion mass spectrometry. In: MICROELECTRONICS AND RELIABILITY, 36(11-12). p. 1699-1702. | - |
item.contributor | COSEMANS, Patrick Peter | - |
item.contributor | D'OLIESLAEGER, Marc | - |
item.contributor | DE CEUNINCK, Ward | - |
item.contributor | DE SCHEPPER, Luc | - |
item.contributor | STALS, Lambert | - |
Appears in Collections: | Research publications |
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