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Title: | Rear surface passivation of ultra-thin CIGS solar cells using atomic layer deposited HfOx | Authors: | BIRANT, Gizem Mafalda, J SCAFFIDI, Romain DE WILD, Jessica BULDU KOHL, Dilara KOHL, Thierry BRAMMERTZ, Guy MEURIS, Marc POORTMANS, Jef VERMANG, Bart |
Issue Date: | 2020 | Publisher: | EDP SCIENCES S A | Source: | EPJ Photovoltaics, 11 (Art N° 10) | Abstract: | In this work, hafnium oxide layer is investigated as rear surface passivation layer for ultra-thin (550 nm) CIGS solar cells. Point contact openings in the passivation layer are realized by spin-coating potassium fluoride prior to absorber layer growth. Contacts are formed during absorber layer growth and visualized with scanning electron microscopy (SEM). To assess the passivating qualities, HfOx was applied in a metal-insulator-semiconductor (MIS) structure, and it demonstrates a low interface trap density in combination with a negative density of charges. Since we used ultra-thin devices that are ideal to probe improvements at the rear, solar cell results indicated improvements in all cell parameters by the addition of 2 nm thick HfOx passivation layer with contact openings. | Keywords: | Solar cells;ultra-thin films;copper indium gallium selenide;surface passivation layer;hafnium oxide | Document URI: | http://hdl.handle.net/1942/34347 | ISSN: | 2105-0716 | e-ISSN: | 2105-0716 | DOI: | 10.1051/epjpv/2020007 | ISI #: | WOS:000596464100001 | Rights: | This is an Open Access article distributed under the terms of the Creative Commons Attribution License (https://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. | Category: | A1 | Type: | Journal Contribution |
Appears in Collections: | Research publications |
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pv200010.pdf | Published version | 1.03 MB | Adobe PDF | View/Open |
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