Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/3436
Title: Investigation of n-doping in CVD diamond using gap states spectroscopy
Authors: NESLADEK, Milos 
MEYKENS, Kristien 
STALS, Lambert 
QUAEYHAEGENS, Carl 
D'OLIESLAEGER, Marc 
WU, Ting-Di
Vanecek, M
Rosa, J
Issue Date: 1996
Publisher: ELSEVIER SCIENCE SA LAUSANNE
Source: DIAMOND AND RELATED MATERIALS, 5(9). p. 1006-1011
Abstract: In-situ doping of CVD diamond with N and Li using N-2 and a Li-containing organometaliic precursor was investigated. Photothermal deflection spectroscopy (PDS) was used to study optical transitions from localized electronic states in the bandgap of CVD diamond resulting from the presence of extrinsic and intrinsic impurities. The advantage of PDS is its sensitivity, which allows very low defect levels to be investigated even in thin diamond films. The optical absorption coefficient alpha of N-doped films (100 ppm N-2 in the gas phase) shows absorption bands characteristic of Ib diamond. When a Li-containing precursor is used, a deep defect state around 1.5 eV, which has not been reported previously, is observed. Optical transitions due to this defect state are superimposed on the characteristic background absorption present in all CVD diamond films.
Notes: ACAD SCI CZECH REPUBL,INST PHYS,CR-16200 PRAGUE,CZECH REPUBLIC.Nesladek, M, LIMBURGS UNIV CENTRUM,MAT RES INST,DIV MAT PHYS,UNIV CAMPUS,WETENSCHAPSPARK 1,B-3590 DIEPENBEEK,BELGIUM.
Keywords: CVD diamond; n-doping; defects; optical absorption; impurity incorporation
Document URI: http://hdl.handle.net/1942/3436
DOI: 10.1016/0925-9635(95)00486-6
ISI #: A1996VA32500024
Type: Journal Contribution
Appears in Collections:Research publications

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