Please use this identifier to cite or link to this item:
http://hdl.handle.net/1942/34489
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Fırat, Meriç | - |
dc.contributor.author | Payo, María Recamán | - |
dc.contributor.author | DUERINCKX, Filip | - |
dc.contributor.author | Luchies, Jan-Marc | - |
dc.contributor.author | Lenes, Martijn | - |
dc.contributor.author | POORTMANS, Jef | - |
dc.date.accessioned | 2021-07-15T13:23:18Z | - |
dc.date.available | 2021-07-15T13:23:18Z | - |
dc.date.issued | 2019 | - |
dc.date.submitted | 2021-07-12T13:55:52Z | - |
dc.identifier.citation | Poortmans, J.; Ballif, C.; Rolf, B.; Dubois, S.; Glunz, S.; Hahn, G.; Verlinden, P.; Weeber, A. (Ed.). 9TH INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS (SILICONPV 2019), (Art N° 040004) | - |
dc.identifier.isbn | 978-0-7354-1892-9 | - |
dc.identifier.issn | 0094-243X | - |
dc.identifier.uri | http://hdl.handle.net/1942/34489 | - |
dc.description.abstract | Passivating contacts consisting of polycrystalline silicon (poly-Si) and thin silicon-oxide (SiOx) layers facilitate a significant reduction of recombination losses in silicon solar cells. Nevertheless, these gains come with short circuit current density (J(sc)) losses due to parasitic absorption by the poly-Si. Even if the passivating contacts are employed at the rear side only, absorption, particularly due to free carriers (FCA) in the heavily doped poly-Si, may still lead to significant J(sc) losses. In this work, these losses are characterized as a function of the poly-Si thickness (t(poly)) by the analysis of front reflectance spectra in the infrared (IR). For this study, two sets of samples with different n-type full-area poly-Si passivating contacts at the rear are compared to references with a phosphorus(P)-diffused back surface field (BSF) instead. For the two sets, J(sc) losses with respect to the references (Delta J(sc)) are 0.10 mA/cm(2) and 0.42 mA/cm(2) per 100 nm thick poly-Si, respectively. The difference between the two values is studied by Hall measurements and interpreted to be due to the over three times as high free carrier concentration (N-D,N-act) in the poly-Si layers of the second set of samples as the first set. On the other hand, lifetime measurements showed an excellent passivation yielding an implied open circuit voltage (iV(oc)) up to 736 mV only for the samples with the more heavily doped poly-Si, whereas iV(oc) of 683 mV was measured for the first set, which indicates a trade-off between absorption losses and passivation quality. | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.relation.ispartofseries | AIP Conference Proceedings | - |
dc.title | Characterization of absorption losses in rear side n-type polycrystalline silicon passivating contacts | - |
dc.type | Proceedings Paper | - |
local.bibliographicCitation.authors | Poortmans, J. | - |
local.bibliographicCitation.authors | Ballif, C. | - |
local.bibliographicCitation.authors | Rolf, B. | - |
local.bibliographicCitation.authors | Dubois, S. | - |
local.bibliographicCitation.authors | Glunz, S. | - |
local.bibliographicCitation.authors | Hahn, G. | - |
local.bibliographicCitation.authors | Verlinden, P. | - |
local.bibliographicCitation.authors | Weeber, A. | - |
local.bibliographicCitation.conferencedate | APR 08-11, 2019 | - |
local.bibliographicCitation.conferencename | 9th International Conference on Crystalline Silicon Photovoltaics (SiliconPV) | - |
local.bibliographicCitation.conferenceplace | Imec, Leuven, BELGIUM | - |
dc.identifier.spage | 040004 | - |
dc.identifier.volume | 2147 | - |
local.bibliographicCitation.jcat | C1 | - |
local.publisher.place | 2 HUNTINGTON QUADRANGLE, STE 1NO1, MELVILLE, NY 11747-4501 USA | - |
local.type.refereed | Refereed | - |
local.type.specified | Proceedings Paper | - |
local.relation.ispartofseriesnr | 2147 | - |
local.bibliographicCitation.artnr | 040004 | - |
dc.identifier.doi | 10.1063/1.5123831 | - |
dc.identifier.isi | 000557840700026 | - |
dc.identifier.eissn | - | |
local.provider.type | wosris | - |
local.bibliographicCitation.btitle | 9TH INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS (SILICONPV 2019) | - |
local.uhasselt.international | yes | - |
item.validation | ecoom 2022 | - |
item.accessRights | Restricted Access | - |
item.fullcitation | Fırat, Meriç; Payo, María Recamán; DUERINCKX, Filip; Luchies, Jan-Marc; Lenes, Martijn & POORTMANS, Jef (2019) Characterization of absorption losses in rear side n-type polycrystalline silicon passivating contacts. In: Poortmans, J.; Ballif, C.; Rolf, B.; Dubois, S.; Glunz, S.; Hahn, G.; Verlinden, P.; Weeber, A. (Ed.). 9TH INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS (SILICONPV 2019), (Art N° 040004). | - |
item.fulltext | With Fulltext | - |
item.contributor | Fırat, Meriç | - |
item.contributor | Payo, María Recamán | - |
item.contributor | DUERINCKX, Filip | - |
item.contributor | Luchies, Jan-Marc | - |
item.contributor | Lenes, Martijn | - |
item.contributor | POORTMANS, Jef | - |
Appears in Collections: | Research publications |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
1.5123831.pdf Restricted Access | Published version | 1.36 MB | Adobe PDF | View/Open Request a copy |
WEB OF SCIENCETM
Citations
5
checked on May 16, 2024
Page view(s)
20
checked on Sep 7, 2022
Download(s)
2
checked on Sep 7, 2022
Google ScholarTM
Check
Altmetric
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.