Please use this identifier to cite or link to this item:
http://hdl.handle.net/1942/34554
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Recamán Payo, María | - |
dc.contributor.author | Li, Yuandong | - |
dc.contributor.author | Russell, Richard | - |
dc.contributor.author | Singh, Sukhvinder | - |
dc.contributor.author | Kuzma Filipek, Izabela | - |
dc.contributor.author | DUERINCKX, Filip | - |
dc.contributor.author | Szlufcik, Jozef | - |
dc.contributor.author | POORTMANS, Jef | - |
dc.date.accessioned | 2021-07-26T12:30:37Z | - |
dc.date.available | 2021-07-26T12:30:37Z | - |
dc.date.issued | 2020 | - |
dc.date.submitted | 2021-07-12T09:57:36Z | - |
dc.identifier.citation | Solar energy materials and solar cells, 204 (Art N° 110173) | - |
dc.identifier.issn | 0927-0248 | - |
dc.identifier.uri | http://hdl.handle.net/1942/34554 | - |
dc.description.abstract | This work evaluates the potential of selective epitaxy to mitigate the recombination losses at the p-type contact regions of plated bifacial n-type PERT cells. Following the growth of a 500 nm, 2.5 10(19) cm(-3) boron doped epitaxial layer at the emitter contact regions defined by laser ablation of the passivating dielectrics, both an increase in V-oc (+6 mV) and FF (+ 1% absolute) are measured in the final cells compared to the reference with a homogeneous diffused emitter. These results come with an average efficiency gain of 0.3 and 0.5% absolute for front and rear side illumination, respectively. If the diffused, blanket emitter in the passivated regions is replaced by a thicker, lowly doped epitaxial profile (3 mu m, 5 10(18) cm(-3)) to further reduce recombination, an additional rise in implied V-oc after metallization of 10 mV is estimated. This increase would be the result of a reduction in J(0,pass, emitter) (down to 6 fA/cm(2)) and J(0,plated, emitter) (down to 1967 fA/cm(2)). | - |
dc.description.sponsorship | The work in this paper was partially funded by Kuwait Foundation for the Advancement of Sciences under project number P115-15EE-01 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER | - |
dc.rights | 2019 Published by Elsevier B.V. | - |
dc.subject.other | Selective epitaxy | - |
dc.subject.other | Plating Bifacial solar cell | - |
dc.subject.other | Passivating contact | - |
dc.subject.other | p-Type contact | - |
dc.title | Efficiency gain in plated bifacial n-type PERT cells by means of a selective emitter approach using selective epitaxy | - |
dc.type | Journal Contribution | - |
local.bibliographicCitation.conferencedate | APR 08-11, 2019 | - |
local.bibliographicCitation.conferencename | 9th International Conference on Crystalline Silicon Photovoltaics (SiliconPV) | - |
local.bibliographicCitation.conferenceplace | Imec, Leuven, BELGIUM | - |
dc.identifier.volume | 204 | - |
local.bibliographicCitation.jcat | A1 | - |
local.publisher.place | RADARWEG 29, 1043 NX AMSTERDAM, NETHERLANDS | - |
local.type.refereed | Refereed | - |
local.type.specified | Article | - |
local.bibliographicCitation.artnr | 110173 | - |
dc.identifier.doi | 10.1016/j.solmat.2019.110173 | - |
dc.identifier.isi | 000501656500028 | - |
dc.identifier.eissn | 1879-3398 | - |
local.provider.type | wosris | - |
local.uhasselt.international | no | - |
item.fulltext | With Fulltext | - |
item.contributor | Recamán Payo, María | - |
item.contributor | Li, Yuandong | - |
item.contributor | Russell, Richard | - |
item.contributor | Singh, Sukhvinder | - |
item.contributor | Kuzma Filipek, Izabela | - |
item.contributor | DUERINCKX, Filip | - |
item.contributor | Szlufcik, Jozef | - |
item.contributor | POORTMANS, Jef | - |
item.fullcitation | Recamán Payo, María; Li, Yuandong; Russell, Richard; Singh, Sukhvinder; Kuzma Filipek, Izabela; DUERINCKX, Filip; Szlufcik, Jozef & POORTMANS, Jef (2020) Efficiency gain in plated bifacial n-type PERT cells by means of a selective emitter approach using selective epitaxy. In: Solar energy materials and solar cells, 204 (Art N° 110173). | - |
item.validation | ecoom 2022 | - |
item.accessRights | Open Access | - |
crisitem.journal.issn | 0927-0248 | - |
crisitem.journal.eissn | 1879-3398 | - |
Appears in Collections: | Research publications |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
1-s2.0-S0927024819305021-main.pdf Restricted Access | Published version | 2.87 MB | Adobe PDF | View/Open Request a copy |
Efficiency gain in plated bifacial n-type PERT cells by means of a selective emitter approach using selective epitaxy.pdf | Peer-reviewed author version | 2.52 MB | Adobe PDF | View/Open |
WEB OF SCIENCETM
Citations
3
checked on May 18, 2024
Page view(s)
18
checked on Jul 7, 2022
Download(s)
2
checked on Jul 7, 2022
Google ScholarTM
Check
Altmetric
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.