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http://hdl.handle.net/1942/35375
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DC Field | Value | Language |
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dc.contributor.author | Zalieckas, J | - |
dc.contributor.author | POBEDINSKAS, Paulius | - |
dc.contributor.author | Greve, MM | - |
dc.contributor.author | Eikehaug, K | - |
dc.contributor.author | HAENEN, Ken | - |
dc.contributor.author | Holst, B | - |
dc.date.accessioned | 2021-09-15T09:34:58Z | - |
dc.date.available | 2021-09-15T09:34:58Z | - |
dc.date.issued | 2021 | - |
dc.date.submitted | 2021-08-27T13:56:10Z | - |
dc.identifier.citation | DIAMOND AND RELATED MATERIALS, 116 (Art N° 108394) | - |
dc.identifier.uri | http://hdl.handle.net/1942/35375 | - |
dc.description.abstract | Diamond growth at low temperatures (<400 degrees C) and over large areas is attractive for materials, which are sensitive to high temperatures and require good electronic, chemical or surface tribological properties. Resonantcavity microwave plasma enhanced (MWPE) chemical vapor deposition (CVD) is a standard method for growing diamonds, however, with limited deposition area. An alternative method for CVD of diamond over large area and at low temperature is to use a surface wave plasma (SWP). In this work we introduce a novel method to excite SWP using composite right/left-handed (CRLH) materials and demonstrate growth of nanocrystalline diamond (NCD) on 4-inch Si wafers. The method uses a set of slotted CRLH waveguides coupled to a resonant launcher, which is connected to a deposition chamber. Each CRLH waveguide supports infinite wavelength propagation and consists of a chain of periodically cascaded unit cells. The SWP is excited by a set of slots placed to interrupt large area surface current on the resonant launcher. This configuration yields a uniform gas discharge distribution. We achieve 80 nm/h growth rate for NCD films with a low surface roughness (5-10 nm) at 395 degrees C and 0.5 mbar pressure using a H2/CH4/CO2 gas mixture. | - |
dc.description.sponsorship | This work was financially supported by the FORNY programme under the Research Council of Norway and the Methusalem NANO network. | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.rights | 2021 The Author(s). Published by Elsevier B.V. This is an open access article under the CC BY license (http://creativecommons.org/licenses/by/4.0/). | - |
dc.subject.other | Large area diamond CVD | - |
dc.subject.other | Right | - |
dc.subject.other | left-handed materials | - |
dc.subject.other | Nanocrystalline diamond | - |
dc.subject.other | Surface wave plasma | - |
dc.title | Large area microwave plasma CVD of diamond using composite right/left-handed materials | - |
dc.type | Journal Contribution | - |
dc.identifier.volume | 116 | - |
local.format.pages | 6 | - |
local.bibliographicCitation.jcat | A1 | - |
local.publisher.place | PO BOX 564, 1001 LAUSANNE, SWITZERLAND | - |
local.type.refereed | Refereed | - |
local.type.specified | Article | - |
local.bibliographicCitation.artnr | 108394 | - |
dc.identifier.doi | 10.1016/j.diamond.2021.108394 | - |
dc.identifier.isi | 000663581700005 | - |
local.provider.type | Web of Science | - |
local.uhasselt.international | yes | - |
item.contributor | Zalieckas, J | - |
item.contributor | POBEDINSKAS, Paulius | - |
item.contributor | Greve, MM | - |
item.contributor | Eikehaug, K | - |
item.contributor | HAENEN, Ken | - |
item.contributor | Holst, B | - |
item.validation | ecoom 2022 | - |
item.fulltext | With Fulltext | - |
item.accessRights | Open Access | - |
item.fullcitation | Zalieckas, J; POBEDINSKAS, Paulius; Greve, MM; Eikehaug, K; HAENEN, Ken & Holst, B (2021) Large area microwave plasma CVD of diamond using composite right/left-handed materials. In: DIAMOND AND RELATED MATERIALS, 116 (Art N° 108394). | - |
crisitem.journal.issn | 0925-9635 | - |
crisitem.journal.eissn | 1879-0062 | - |
Appears in Collections: | Research publications |
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File | Description | Size | Format | |
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1-s2.0-S0925963521001576-main.pdf | Published version | 2.13 MB | Adobe PDF | View/Open |
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